• 제목/요약/키워드: energy electronic state calculation

검색결과 35건 처리시간 0.021초

TiO2 전극 표면의 전자상태 계산 (Calculation on Surface Electronic State of $TiO_2$ Electrode)

  • 이동윤;이원재;송재성
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
    • /
    • pp.259-262
    • /
    • 2003
  • The surface electronic state of rutile $TiO_2$, which is an oxide semiconductor and has a wide band gap of 3.1 $\sim$ 3.5 eV, was calculated by DV-$X_{\alpha}$ method, which is a sort of the first principle molecular orbital method and uses Hartre-Fock-Slater approximation. The $[Ti_{15}O_{56}]^{-52}$ cluster model was used for the calculation of bulk state and the $[OTi_{11}O_{34}]^{-24}$ model for the surface state calculation. After calculations, the energy level diagrams and the deformation electron density distribution map were compared in both models. As results, it was identified that the surface energy levels are found between the valence and conduction band of bulk $TiO_2$ on the surface area. The energy values of these surface-induced levels are lower than conduction band of bulk $TiO_2$ by 0.1 $\sim$ 1 eV. From this fact, it is expected that the surface energy levels act as donar levels in n-type semiconductor.

  • PDF

다중강전자 상태를 가진 육방정계물질의 전자구조 계산 (The Electronic Structure Calculations for Hexagonal Multiferroic Materials)

  • 박기택
    • 한국자기학회지
    • /
    • 제17권4호
    • /
    • pp.152-155
    • /
    • 2007
  • 다중강전자 상태의 $YMnO_3,\;ScMnO_3$의 전자구조와 자기구조를 국소스핀밀도근사(LSDA)를 이용하여 계산하였다. 강자성 상태이며 강유전 상태의 전자구조는 육방정계 구조로 인하여 Mn 3d 에너지띠가 분리되어 띠틈을 나타내었다. 이러한 에너지 띠틈과 작은 Y, Sc 이온의 반경으로 인하여 $YMnO_3,\;ScMnO_3$는 반강자성 강유전적 성질을 가지는 다중강전자 구조를 가지고 있음을 보았다. 또한 총에너지 계산을 통하여 반강자성, 강유전 상태가 가장 안정됨이 실험과 일치하였다.

Y이 도핑된 ZnO의 전자상태 계산 (Calculation on Electronic State of Y-doped ZnO)

  • 이동윤;이원재;송재성;구보근;김현주
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
    • /
    • pp.172-173
    • /
    • 2005
  • The electronic state of ZnO doped with Y was calculated using the density functional theory. In this study, the program used for the calculation on theoretical structures of ZnO and doped ZnO was Vienna Ab-initio Simulation Package (VASP), which is a sort of pseudo potential method. The detail of electronic structure was obtained by the descrite variational $X\alpha$ (DV-$X\alpha$) method, which is a sort of molecular orbital full potential method. The optimized crystal structures obtained by calculations were compared to the measured structure. The density of state and energy levels of dopant elements was shown and discussed in association with optical properties.

  • PDF

에너지 전자상태 계산으로 도출된 이론값을 이용한 니켈 합금 설계 (Design of Nickel Alloys Using the Theoretical Values Calculated from the Electronic State Energies)

  • 백민숙;강법성;백경철;김병일;윤동주
    • 한국재료학회지
    • /
    • 제25권11호
    • /
    • pp.642-646
    • /
    • 2015
  • Super alloys, which can be divided into three categories, i.e. Ni-base, Co-base, and Fe-base alloys, are widely used for high temperature applications. Since superalloys contain many alloying elements and precipitates, their chemistry and processing parameters need to be carefully designed. In this study, we designed a new Ni alloy to prevent corrosion due to water vapor and gases at high temperatures. The new alloy was designed using the theoretical value of the resulting energy electronic state calculation($DV-X{\alpha}$ method). The components that were finally used were Cr, Mo, and Ti, with Ni as a base. For these alloys, elements were selected in order to compare their values with that of the average theoretical basis for an Inconel 625 alloy. Finally, two kinds of Ni alloy were designed: Ni-28Cr-4Mo-2Ti and Ni-20Cr-10Mo-1Ti.

범함수궤도법을 이용하여 계산한 Al, Ga, In이 도핑된 ZnO의 전자상태 (Electronic State of ZnO doped with Al, Ga and In, Calculated by Density Functional Theory)

  • 이동윤;이원재;송재성
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
    • /
    • pp.218-221
    • /
    • 2004
  • The electronic state of ZnO doped with Al, Ga and In, which belong to III family elements in periodic table, was calculated using the density functional theory. In this study, the program used for the calculation on theoretical structures of ZnO and doped ZnO was Vienna Ab-initio Simulation Package (VASP), which is a sort of pseudo potential method. The detail of electronic structure was obtained by the describe variational $X{\alpha}(DV-X{\alpha})$(DV-Xa) method, which is a sort of molecular orbital full potential method. The optimized crystal structures obtained by calculations were compared to the measured structure. The density of state and energy levels of dopant elements was shown and discussed in association with properties.

  • PDF

DV-Xα 클러스터 계산법에 의한 Fe4N의 전자상태계산 (Electronic States Calculation of Fe4N by DV-Xα cluster calculation)

  • 송동원;이인섭;배동수
    • 한국재료학회지
    • /
    • 제12권1호
    • /
    • pp.44-47
    • /
    • 2002
  • DV(Discrete Variation)-X${\alpha}$ cluster calculation was employed to calculate the electronic states of ${\gamma}'- Fe_4N$ which was one of iron nitride phases synthesized from plasma ion nitriding to improve surface hardness and wear resistance. The result of calculated electron density of states for Fe was similar to the result of band calculation. The cluster used for calculation of electronic states of ${\gamma}'-Fe_4N$ was based on $Fe_{14}N$ cluster which comprises 15 atoms. Finally the electronic states of ${\gamma}'- Fe_4N$ such as net-charge, band order, energy level, electron wave-function, and contour map for electron density were derived by the calculation.

A Defect Free Bistable C1 SSFLC Devices

  • Wang, Chenhui;Bos, Philip J.
    • Journal of Information Display
    • /
    • 제4권1호
    • /
    • pp.1-8
    • /
    • 2003
  • Recent progress in both low pretilt and high pretilt defect free C1 surface stabilized ferroelectric liquid crystal (SSFLC) devices is reviewed. First, by numerical calculation to investigate the balance between surface azimuthal anchoring energy and bulk elastic energy within the confined chevron layer geometry of C1 and C2, it is possible to achieve a zigzag free C1 state by low azimuthal anchoring alignment with a low pretilt angle. The critical azimuthal anchoring coefficient for defect free C1 state is calculated. Its relationship with elastic constant, chevron angle as well as surface topography effect are also discussed. Second, using $5^{\circ}$ oblique SiO deposition alignment method a defect free, large memory angle, high contrast ratio and bistable C1 SSFLC display, which has potential for electronic paper applications has also been developed. The electrooptical properties and bistability of this device have been investigated. Various aspects of defect control are also discussed.

Adaptive Energy Optimization for Object Tracking in Wireless Sensor Network

  • Feng, Juan;Lian, Baowang;Zhao, Hongwei
    • KSII Transactions on Internet and Information Systems (TIIS)
    • /
    • 제9권4호
    • /
    • pp.1359-1375
    • /
    • 2015
  • Energy efficiency is critical for Wireless Sensor Networks (WSNs) since sensor nodes usually have very limited energy supply from battery. Sleep scheduling and nodes cooperation are two of the most efficient methods to achieve energy conservation in WSNs. In this paper, we propose an adaptive energy optimization approach for target tracking applications, called Energy-Efficient Node Coordination (EENC), which is based on the grid structure. EENC provides an unambiguous calculation and analysis for optimal the nodes cooperation theoretically. In EENC, the sleep schedule of sensor nodes is locally synchronized and globally unsynchronized. Locally in each grid, the sleep schedule of all nodes is synchronized by the grid head, while globally the sleep schedule of each grid is independent and is determined by the proposed scheme. For dynamic sleep scheduling in tracking state we propose a multi-level coordination algorithm to find an optimal nodes cooperation of the network to maximize the energy conservation while preserving the tracking performance. Experimental results show that EENC can achieve energy saving of at least 38.2% compared to state-of-the-art approaches.

분자궤도계산법에 의한 $\beta$-$MnO_2$의 전자상태 및 화학결합 계산 (Calculation on Electronic State and Chemical Bonding of $\beta$-$MnO_2$ by DV-X$\alpha$ Method)

  • 이동윤;김봉서;송재성;김현식
    • 한국결정학회지
    • /
    • 제14권1호
    • /
    • pp.16-23
    • /
    • 2003
  • β-MnO₂ 전자상태와 화학결합을 하트리-폭-슬레이터 근사를 사용하는 제 1원리 분자 궤도법의 일종인 DV-X/sub α/ 법에 의해 이론적으로 조사하였다. 벌크상의 β-MnO₂에 대한 상태를 해석하기에 적합한 클러스터 모델을 결정하기 위하여, 여러 가지 다른 크기를 지닌 수종의 클러스터 모델들에 대한 계산을 행하였다. 실험적으로 측정된 XPS와 이론적으로 계산된 XPS를 비교함으로써, Mn/sub 15/O/sub 56/ 모델이 β-MnO₂의 전자 상태와 화학 결합을 계산하기에 가장 적합한 모델임을 결정하였다. 이 모델을 사용하여 에너지 준위, 상태 밀도, 유효 공유 결합 전하, 유효 전하, 전자 밀도 분포를 구하고, 이에 대한 고찰을 행하였다.

범밀도함수법을 이용하여 계산한 IIIB족 원소가 도핑된 ZnO의 전자상태 (Electronic State of ZnO Doped with Elements of IIIB family, Calculated by Density functional Theory)

  • 이동윤;이원재;민복기;김인성;송재성;김양수
    • 한국전기전자재료학회논문지
    • /
    • 제18권7호
    • /
    • pp.589-593
    • /
    • 2005
  • The electronic states of ZnO doped with Al, Ga and In, which belong to III family elements in periodic table, were calculated using the density functional theory. In this study, the calculation was performed by two Programs; the discrete variational Xa (DV-Xa) method, which is a sort of molecular orbital full potential method; Vienna Ab-initio Simulation Package (VASP), which is a sort of pseudo potential method. The fundamental mixed orbital structure in each energy level near the Fermi level was investigated with simple model using DV-Xa. The optimized crystal structures calculated by VASP were compared to the measured structures. The density of state and the energy levels of dopant elements were shown and discussed in association with properties.