• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.139-141
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• 2005

It is possble to study charge transfer property which is caused by height variation because we can see the organic materials barrier height and STM tip by organic materials energy band gap. Here, we investigated the negative differential resistance(NDR) and charge transfer property of self-assembled 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment($H_{2}SO_{4}:H_{2}O_{2}$=3:1) Si. The Au substrate was exposed to a 1 mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/1$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_{2}Cl_{2}$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -1.50 V to -1.20 V with 298 K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found that NDR and charge transfer property by a little change of height when the voltage is applied between STM tip and electrode.

• 전기학회논문지
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• 제67권6호
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• pp.789-793
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• 2018

All transparent metal oxide photoelectric device based on $V_2O_5$ was fabricated with structure of $V_2O_5/ZnO/ITO$ by magnetron sputtering system. $V_2O_5$ was deposited by reactive sputtering system with 4 inch vanadium target (purity 99.99%). In order to achieve p-n junction, p-type $V_2O_5$ was deposited onto the n-type ZnO layer. The ITO (indium tin oxide) was applied as the electron transporting layer for effective collection of the photo-induced electrons. Electrical and optical properties were analyzed. The Mott-Schottky analysis was applied to investigate the energy band diagram through the metal oxide layers. The $V_2O_5/ZnO/ITO$ photoelectric device has a rectifying ratio of 99.25 and photoresponse ratios of 1.6, 4.88 and 2.68 under different wavelength light illumination of 455 nm, 560 nm and 740 nm. Superior optical properties were realized with the high transmittance of average 70 % for visible light range. Transparent $V_2O_5$ layer absorbs the short wavelength light efficiently while passing the visible light. This research may provide a route for all-transparent photoelectric devices based on the adoption of the emerging p-type $V_2O_5$ metal oxide layer.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.437-443
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• 2000

In this study several lanthanide complexes such as Eu(TTA)$_3$(Phen), Tb(ACAC)$_3$-(Cl-Phen) were synthesized and the white-light electroluminescence(EL) characteristics of their thin films were investigated where the devices having structures of anode/TPD/Tb(ACAC)$_3$(Cl-Phen)/Eu(TTA)$_3$(Phen)/Alq$_3$or Bebq$_2$/cathode and the low work function metal alloy such as Li:Al was used as the electron injecting electrode(cathode). Device structure of glass substrate/ITO/TPD(30nm)/Tb(ACAC)$_3$(Phen)(30nm)/Eu(TTA)$_3$(Phen)(6nm)/DCM doped Alq$_3$(10nm)/Alq$_3$(20nm)/Li:Al(100nm) was also fabricated and their EL characteristics were investigated where Eu(TTA)$_3$(Phen) and DCM doped Alq$_3$were used as red light-emitting materials. It was found that the turn-on voltage of the device with non-doped Alq$_3$was lower than that of the devices with doped Alq$_3$and the blue and red light emission peaks due to TPD and Eu(TTA)$_3$(Phen) with non-doped Alq$_3$were lower than those with DCM doped Alq$_3$Details on the white-light-emitting characteristics of these device structures were explained by the energy and diagrams of various materials used in these structure where the energy levels of new materials such as ionization potential(IP) and electron affinity(EA) were measured by cyclic voltametric method.

• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.245-248
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• 2014

$Pt/Al_2O_3/Si_3N_4/SiO_2/Si$ charge trap flash memory structures with various thicknesses of the $Si_3N_4$ charge trapping layer were fabricated. According to the calculated and measured results, we depicted electron loss in a schematic diagram that illustrates how the trap to band tunneling and thermal excitation affects electrons loss behavior with the change of $Si_3N_4$ thickness, temperature and trap energy levels. As a result, we deduce that $Si_3N_4$ thicknesses of more than 6 or less than 4.3 nm give no contribution to improving memory performance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.446-446
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• 2011

One dimensional (1-D) structures of ZnO nanorods are promising elements for future optoelectronic devices. However there are still many obstacles in fabricating high-quality p-type ZnO up to now. In addition, it is limited to measure the degree of the doping concentration and carrier transport of the doped 1-D ZnO with conventional methods such as Hall measurement. Here we demonstrate the measurement of the electronic properties of p- and n-doped ZnO nanorods by the Kelvin probe force microscopy (KPFM). Vertically aligned ZnO nanorods with intrinsic n-doped, As-doped p-type, and p-n junction were grown by vapor phase epitaxy (VPE). Individual nanowires were then transferred onto Au films deposited on Si substrates. The morphology and surface potentials were measured simultaneously by the KPFM. The work function of the individual nanorods was estimated by comparing with that of gold film as a reference, and the doping concentration of each ZnO nanorods was deduced. Our KPFM results show that the average work function difference between the p-type and n-type regions of p-n junction ZnO nanorod is about ~85meV. This value is in good agreement with the difference in the work function between As-doped p- and n-type ZnO nanorods (96meV) measured with the same conditions. This value is smaller than the expected values estimated from the energy band diagram. However it is explained in terms of surface state and surface band bending.

• 한국응용과학기술학회지
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• 제33권2호
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• pp.264-270
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• 2016

음식물류폐기물의 에너지 잠재량은 2,206 천TOE 임에도 대부분 사료화와 퇴비화로 약 85.5%가 재활용 되고 있으며, 해당 시설에서 생산된 제품 중 사료화는 72%, 퇴비화는 61%가 무상판매되고 있다. 이에 본 연구는 음식물류폐기물을 반탄화 반응을 이용하여 연료화하고자 한다. 하지만 음식물류폐기물만 단독으로 연료화 할 경우 연료적 가치가 낮아짐을 예방하고자 하수슬러지를 일정 비율로 혼합하여 진행하였다. 음식물류폐기물과 하수슬러지의 혼합비율은 10:0, 8:2, 6:4, 5:5로 하였다. 실험 결과 혼합 비율에 상관없이 반응온도 $240^{\circ}C$이상에서 함수율 10% 이하로 감소하는 것을 확인 할 수 있었다. 고정탄소의 경우 반응온도가 높아질수록, 하수슬러지의 비율이 높아질수록 증가하였으며, 초기 1.1%에서 최대 약 36% 로(혼합비율 6:4, 반응온도 $270^{\circ}C$) 측정 되었으며, 발열량의 경우 반응온도 $240^{\circ}C$부터 고형연료제품기준인 3,000Kcal/Kg 이상에 만족하는 발열량을 나타내었으며, 초기시료보다 약 6배 정도 증가한 발열량을 얻을 수 있었다. Van krevelen Diagram이 Lignite 범위까지 이동하였으며, 슬러지 혼합비율이 높아질수록 높은 연료비와 5,500Kcal/kg 이하의 연소성지수를 얻을 수 있었다. 하수슬러지 혼합 비율이 높아질수록 발열량은 감소하지만, 고정탄소 함량 증가, 연료비 개선 등으로 음식물류폐기물만 단독 고형연료화 한 것 보다 연료로써의 품질이 좋아지는 것을 확인 할 수 있었다.

• 대한화학회지
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• 제55권6호
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• pp.932-935
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• 2011

Using tetrabutyl titanate as precursor, $Eu^{3+}$ doped $TiO_2$ nano-powder was prepared by sol-gel method, the nature of luminescence of nano-powder was studied. The interaction of chlorpyrifos with $Eu^{3+}$ doped $TiO_2$ was studied by absorption and fluorescence spectroscopy. The results indicated the fluorescence intensity of $Eu^{3+}$ doped $TiO_2$ was quenched by chlorpyrifos and the quenching rate constant ($k_q$) was $1.24{\times}10^{11}\;L/mol{\cdot}s$ according to the Stern-Volmer equation. The dynamics of photoinduced electron transfer from chlorpyrifos to conduction band of $TiO_2$ nanoparticle was observed and the mechanism of electron transfer had been confirmed by the calculation of free energy change (${\Delta}G_{et}$) by applying Rehm-Weller equation as well as energy level diagram. A new rapid method for detection of chlorpyrifos was established according to the fluorescence intensity of $Eu^{3+}$ doped $TiO_2$ was proportional to chlorpyrifos concentration. The range of detection was $5.0{\times}10^{-10}-2.5{\times}10^{-7}mol/L$ and the election limit ($3{\sigma}$) was $3.2{\times}10^{-11}$ mol/L.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• 한국재료학회지
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• 제29권1호
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• pp.1-6
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• 2019

Recent industrialization has led to a high demand for the use of fossil fuels. Therefore, the need for producing hydrogen and its utilization is essential for a sustainable society. For an eco-friendly future technology, photoelectrochemical water splitting using solar energy has proven promising amongst many other candidates. With this technique, semiconductors can be used as photocatalysts to generate electrons by light absorption, resulting in the reduction of hydrogen ions. The photocatalysts must be chemically stable, economically inexpensive and be able to utilize a wide range of light. From this perspective, cuprous oxide($Cu_2O$) is a promising p-type semiconductor because of its appropriate band gap. However, a major hindrance to the use of $Cu_2O$ is its instability at the potential in which hydrogen ion is reduced. In this study, gold is used as a bottom electrode during electrodeposition to obtain a preferential growth along the (111) plane of $Cu_2O$ while imperfections of the $Cu_2O$ thin films are removed. This study investigates the photoelectrochemical properties of $Cu_2O$. However, severe photo-induced corrosion impedes the use of $Cu_2O$ as a photoelectrode. Two candidates, $TiO_2$ and $SnO_2$, are selected for the passivation layer on $Cu_2O$ by by considering the Pourbaix-diagram. $TiO_2$ and $SnO_2$ passivation layers are deposited by atomic layer deposition(ALD) and a sputtering process, respectively. The investigation of the photoelectrochemical properties confirmed that $SnO_2$ is a good passivation layer for $Cu_2O$.

• Composites Research
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• 제34권3호
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• pp.155-160
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• 2021

메타물질은 자연발생 물질에서 발견되지 않는 특성을 만들 수 있는 여러가지 요소들의 복합체로, 힘의 방향을 변환하거나, 음의 강성을 만들거나, 진동 및 충격 특성을 바꿀 수 있다. 제작이 용이하고, 수직방향의 진동과 충격을 저감시키는데 탁월한 성능을 지닌 우드파일 메타물질의 경우, 충격 저감을 위해 충격 전달에 영향을 끼치는 변수에 대한 기초 연구가 필요하다. 최근 기하학적 요소에 따른 충격저감에 대해 연구가 진행되고 있지만, 재료적 변수가 충격저감에 끼치는 영향에 대한 연구는 미흡하다. 본 논문에서는 우드파일 실린더의 기하학적 특성(적층각도, 직경, 길이)과 재료적 특성(탄성계수, 비중, 포아송 비)을 변수화하여 유한요소해석이 진행되었다. 유한요소해석을 통해 우드파일 실린더가 충격을 전달하는 양상을 확인하고, 주효과도 분석을 통해 충격 힘과 에너지의 저감에 대한 변수 별 영향이 고찰되었고, 고속 푸리에 변환(FFT)을 통해 주파수 대역에 대한 분석이 진행되었다. 충격 힘과 진동을 저감시키기 위하여 실린더의 접촉 면적에 영향을 주는 변수들이 크게 영향을 끼치는 것으로 나타났다.