• 제목/요약/키워드: energy band

검색결과 1,833건 처리시간 0.027초

Dimethylanline의 Electronic Spectra와 消光 (Electronic Spectra and Quenching of Dimethylanilines)

  • 정경훈;이익춘
    • 대한화학회지
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    • 제8권4호
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    • pp.158-163
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    • 1964
  • 10 種의 N,N-dimethylaniline에 對하여 electronic spectra와 消光常數를 결정하였다. DMA의 $250m{\mu}$ (C) banp가 소광의 주원인이 되고 있음을 밝혔고 이 band가 $n{\to}{\pi}^{\ast}$ band임을 치환기 효과와 용매 효과를 通하여 밝힐 수 있었다. 이 band에 依하여 흡수된 energy는 삼중항 상태로 전이되고 결국은 가장 적은 energy의 삼중항 상태, $^{3}La$로 떨어져 여기서 無복사 충돌에 依하여 energy를 상실케된다.

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전자빔 증착법으로 제작한 Se박막의 광학적 특성 (Optical characteristics of Se thin film fabricated by EBE method)

  • 정해덕;이기식
    • E2M - 전기 전자와 첨단 소재
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    • 제9권5호
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    • pp.445-449
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    • 1996
  • Structural and optical characteristics in Se thin film fabricated by EBE method had been studied. Se thin film was deposited with noncrystalline until substrate temperature of >$100^{\circ}C$ Color of its surface had red genealogy, and its optical energy band gap was about 2.45 eV. But Se film was grown with monoclinic at substrate temperature of over >$150^{\circ}C$ Also, color of its surface had gray genealogy, and its optical energy band gap was about 2.31 eV. Finally, after heat-treatment at >$150^{\circ}C$ for 15 min with substrate temperature of >$100^{\circ}C$ noncrystalline Se was proved to be hexagonal, and color of its surface had dark gray genealogy, and its optical energy band gap was about 2.06 eV. From the results, it was known that Se thin film for photoelectric device with the lowest optical energy band gap was accepted from hexagonal structure.

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웨이브렛 변환된 다해상도 영상을 이용한 계층적 움직임 추정 (Multi-resolution hierarchical motion estimation in the wavelet transform domain)

  • 김진태;장준필;김동욱;최종수
    • 전자공학회논문지B
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    • 제33B권8호
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    • pp.50-59
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    • 1996
  • In this paper, a new hierarchical motion estiamtion scheme using the wavelet transformed multi-resolution image layers is proposed. Compared with the full search motion estimation method, the existing hierarchical methods remarkably reduce the amount of the computation but their efficiencies are depreciated by the local minima problem. In order to solve the local minima problem, the multi-resolution image layers are composed using the wavelet transform and the number of layers participated in the motion estimation for a block is determined by considering of its low band energy and higher band energy on the first wavelet transformed layer. The ratio between higher band energy and low band energy of each block is evaluated and in the case of the blocks which include relatively large higher band energy, the motion estimation is carried out in the high resolution layer. Otherwise, all layers are used. The final motion vectors are obtained in the first wavelet transformed layer. So less bits for motion vectors are transmitted, and the decomposition of received image using inverse wavelet transform decreases the blocking effect.

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풀밴드 GaAs monte carlo 시뮬레이션을 위한 최적사면체격자의 발생 (Generation of a adaptive tetrahedral refinement mesh for GaAs full band monte carlo simulation)

  • 정학기
    • 전자공학회논문지D
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    • 제34D권7호
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    • pp.37-44
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    • 1997
  • A dadaptive refinement tetrahedron mesh has been presented for using in full band GaAs monte carlo simulation. A uniform tetrahedron mesh is used without regard to energy values and energy variety in case of the past full band simulation. For the uniform tetrahedron mesh, a fine tetrahedron is demanded for keeping up accuracy of calculation in the low energy region such as .GAMMA.-valley, but calculation time is vast due to usin gthe same tetrahedron in the high energy region. The mesh of this study, thererfore, is consisted of the fine mesh in the low energy and large variable energy region and rough mesh n the high energy. The density of states (DOS) calculated with this mesh is compared with the one of the uniform mesh. The DOS of this mesh is improved th efive times or so in root mean square error and the ten times in the correlation coefficient than the one of a uniform mesh. This refinement mesh, therefore, can be used a sthe basic mesh for the full band GaAs monte carlo simulation.

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조성비 변화에 따른 질화물계 화합물 반도체 InyGa1-yAs1-xNx의 에너지 밴드갭과 광학상수 계산 (The Calculation of the Energy Band Gaps and Optical Constants of Zincblende InyGa1-yAs1-xNx on Composition)

  • 정호용;김대익
    • 한국전자통신학회논문지
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    • 제14권5호
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    • pp.877-886
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    • 2019
  • 본 연구에서는 band anticrossing 모델을 사용하여 온도와 조성비 변화에 따른 4원계 질화물계 화합물 반도체 $In_yGa_{1-y}As_{1-x}N_x$의 에너지 밴드갭과 광학상수를 계산하였다. 300K의 조성비 구간($0{\leq}x{\leq}0.05$, $0{\leq}y{\leq}1.0$)에서 에너지 밴드갭들이 연속적으로 감소하며, 계산된 휨 매개변수는 0.522eV가 사용되었다. 에너지 밴드갭 계산 결과는 다른 연구 결과와 대체로 잘 일치하였다. 또한 에너지 밴드갭 결과를 새롭게 제안한 모델식에 적용하여 굴절률 n과 고주파 유전상수 ${\varepsilon}$를 계산하였다.

Synthesis and Band Gap Analysis of Meso-Arylporphyrins Containing Exclusively Electron Donating or Withdrawing Groups

  • Min Su Kang;Kwang-Jin Hwang
    • 대한화학회지
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    • 제67권3호
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    • pp.175-180
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    • 2023
  • Tetra-aryl substituted A4-type porphyrins (TP, TD, TA) and trans-A2B2 porphyrins (DDP1, AAP1) with electron-donating or withdrawing groups were synthesized. The band gap energy of those porphyrins was calculated from their UV-Vis spectra and CV data. With an electron-withdrawing group, the band gap energy of porphyrin TA increased via the LUMO energy up. Meanwhile, the introduction of an electron-donating group decreased the band gap of porphyrin by HOMO level up as as in the case of porphyrin TD. The band gap (2.19-2.28 eV) of metalloporphyrin PP-Ni was greater than those (1.81-2.06 eV) of non-metalloporphyrins PP due to the LUMO level up.

영상 부호화를 위한 LPPU M 대역 필터군의 설계와 성능 분석 (Design and performance analysis of the linear phase para-unitary M bandfilter bank with application to image coding)

  • 이창우;김종원;이상욱
    • 한국통신학회논문지
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    • 제21권5호
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    • pp.1141-1154
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    • 1996
  • The para-unitary (PU) M band filter bank, which can beused for M band decomposition, has many useful properties. In this ppaer, attempts have been made to design and and analyze the linear phase para-unitary (LPPU) M band filter bank, which is appropriate to the image coding application. First, we derive a unified coding gain in terms of the correlation in the band, as well as the energy compaction. And M band filter bank has been designed, maximizing the new coding gain. Then, we analyze the image coding performance of the LPPU M band filter bank, such as the energy compaction, the correlation in the band and the entropy. From the analysis, it is shown that the coding gain for LPPU M band filter bank improves, and the coding gain for the LPPU 4 band filter bank approaches very closely to that for LPPU 8 band filter bank, as the length of the filter increases. This fact is also verified by the coding results on the real images.

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통기밴드식 건조기의 성능 평가 실험 장치 (Lab-scale experimental setup to evaluate the performance of band driers)

  • 박성민;오상현;김성일;김원정
    • 한국가시화정보학회지
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    • 제20권3호
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    • pp.36-41
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    • 2022
  • Drying process is involved in the production of various products including food, textiles, paper, pharmaceuticals, and batteries. Phase change of liquid to vapor generally requires enormous thermal energy, so in order to save energy, it is advantageous to develop an appropriate drier and use it under appropriate operating conditions, depending on the characteristics of materials. However, due to the complex, multiscale heat and mass transfer occurring during drying processes, predictions of appropriate drying conditions before actual operation are not easily achieved, leading to challenges in designing driers. Here, we developed a lab-scale experimental setup to evaluate the performance of band dries. The experimental setup was used to measure the moisture content and temperature change in the materials being dried in a belt dryer. Experimental results obtained using our lab-scale setup allow us to predict the performance of a full-scale band drier, thus suggesting a practical framework for predicting the drying process of various materials and developing band driers.

Energy Levels of $^53 Mn$ by the Nilsson Model

  • Chung, Woon-Hyuk
    • Nuclear Engineering and Technology
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    • 제7권3호
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    • pp.207-211
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    • 1975
  • 에너지 band mixing을 고려함 없이 Nilsson의 핵구조 모형을 사용하여, $^{53}$ Mn의 에너지 준위를 계산하였다. 계산결과는 실험치 및 Malik과 Scholz의 에너지 band mixing에 의한 Nilsson 모형 계산값과 비교하였다. 두 경우, 즉 현재의 계산이나 에너지 band mixing을 고려한 Malik과 Scholz의 계산결과가, 둘 다 수개의 낮은 에너지 준위를 제외하고는, 실험치와 잘 맞지 않았다. 그러나 높은 에너지 준위에 관한 한, 현재의 결과가 에너지 band mixing법에 의한 결과 보다 오히려 약간 더 나은 것이 발견되었다.

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Temperature dependence of photocurrent spectra for $AgInS_2$ epilayers grown by hot wall epitaxy

  • Baek, Seung-Nam;Hong, Kwang-Joon
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.123-124
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    • 2007
  • A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the liteniture. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The temperature dependence of the energy band gap of the $AgInS_2$ obtained from the photocurrent spectrum was well described by the Varshni's relation, $E_g(T)=\;E_g(0)\;eV-(7.78\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;116\;K\;K)$. Also, Eg(0) is the energy band gap at 0 K, which is estimated to be 2.036 eV at the valence band state A and 2.186 eV at the valence band state B.

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