• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.81-81
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• 2003

The stochiometric mixture of evaporating materials for the CuGaSe$_2$ single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe$_2$, it was found tetragonal structure whose lattice constant no and co were 5.615$\AA$ and 11.025$\AA$, respectively. To obtains the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5${\mu}{\textrm}{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30K to 150K and by polar optical scattering in the temperature range 150K to 293K. The optical energy gaps were found to be 1.68eV for CuGaSe$_2$ single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by a=9.615$\times$ 10$^{-4}$ eV/K, and $\beta$=335K. From the photocurrent spectra by illumination of polarized light of the CuGaSe$_2$ single crystal thin films. We have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr was 0.0900eV and 0.2498eV, respectively. From the PL spectra at 20K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352eV, 0.0932eV, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.172-173
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• 2012

Currently GaN based LED is known to show high internal or external efficiency at low current range. However, this LED operation occurs at high current range and in this range, a significant performance degradation known as 'efficiency droop' occurs. Auger process, carrier leakage process, field effect due to lattice mismatch and thermal effects have been discussed as the causes of loss of efficiency, and these phenomena are major hindrance in LED performance. In order to investigate the main effects of efficiency loss and overcome such effects, it is essential to obtain relative proportion of measurements of internal quantum efficiency (IQE) and various radiative and nonradiative recombination processes. Also, it is very important to obtain radiative and non-radiative recombination times in LEDs. In this research, we measured the IQE of InGaN/GaN multiple quantum wells (MQWs) LEDs with PSS and Planar substrate using modified ABC equation, and investigated the physical mechanism behind by analyzing the emission energy, full-width half maximum (FWHM) of the emission spectra, and carrier recombination dynamic by time-resolved electroluminescence (TREL) measurement using pulse current generator. The LED layer structures were grown on a c-plane sapphire substrate and the active region consists of five 30 ${\AA}$ thick In0.15Ga0.85N QWs. The dimension of the fabricated LED chip was $800um{\times}300um$. Fig. 1. is shown external quantum efficiency (EQE) of both samples. Peak efficiency of LED with PSS is 92% and peak efficiency of LED with planar substrate is 82%. We also confirm that droop of PSS sample is slightly larger than planar substrate sample. Fig. 2 is shown that analysis of relation between IQE and decay time with increasing current using TREL method.

• 대한환경공학회지
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• 제28권9호
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• pp.940-948
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• 2006

형광측정법은 자연유기물질을 간편하고 신속하게 분석함으로써 타 분석법에 비해 현장에서 실시간으로 수질관리에 활용할 수 있는 월등한 장점을 가지고 있다. 본 연구에서는 표준자연유기물질, 호소수 및 하천수 등 다양한 시료의 형광지표($F_{450}/F_{500}$), synchronous 스펙트럼, 형광 EEM(excitation-emission matrix)을 조사하고 시료 간 상호비교를 통해 자체생성/외부생성 유기물, 단백질계, 펄빅산계, 휴믹산계, 육질성 휴믹산계 형광특성 영역을 구분하였다. 또한 각 영역간의 형광세기 비를 이용하여 다양한 유기물 성분의 상대적인 분포를 파악하였다. 각 시료에서 얻어진 형광특성 및 형광세기 비는 시료의 수질 특징에서 예상되는 결과와 잘 일치하였다. 자연유기물의 생성지가 육지성일수록 외부생성 유기물 및 육질성 휴믹산계 형광특징이 더 크게 나타났고 하수 처리수의 영향을 받거나 조류 및 미생물 활동이 활발한 지점에서는 단백질계 형광특성이 뚜렷하게 나타났다. 특히, synchronous 형광스펙트럼이나 형광 EEM에서 얻어지는 단백질계/육질성 휴믹산계 형광세기 비는 도심지 하천의 경우 하수종말처리장 방류수 영향을 평가하는 지표로, 또한 호수의 경우 조류 및 미생물 활동 정도를 예측하는 지시자로서 사용될 수 있음을 보여 주었다. 본 연구는 현장시료를 사용한 자연유기물질 형광분석법 및 그 해석에 대한 기초자료를 제시하였으며 이 연구결과는 향후 유기물 성분분포 파악이 필요한 수질관리 분야에서 유용하게 사용될 수 있을 것으로 기대한다.

• 한국진공학회지
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• 제10권3호
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• pp.335-340
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• 2001

RF마그네트론 스퍼터링법으로 사파이어 기판 위에 Ga을 1 wt% 첨가한 ZnO 박막(GZO)을 기판온도 $550^{\circ}C$에서 성장시켜 다결정 박막을 제조하였다. 이러한 박막은 불충분한 전기적 특성이나 PL(Photoluminescence) 특성을 보이고 있다. 이러한 전하농도, 이동도 그리고 PL특성 등과 같은 전기적 광학적 특성을 향상시키고자 질소분위기하에서 RTA(Rapid Thermal Annealing) 법으로 $800^{\circ}C$와 $900^{\circ}C$에서 각각 3분씩 후열처리 하였다. RTA법으로 후열처리한 GZO박막의 비저항은 $2.6\times10^{-4}\Omega$/cm 였으며 전자농도와 이동도는 각각 $3.9\times10^{20}/\textrm{cm}^3$과 60 $\textrm{cm}^2$/V.s 였다. 이러한 물리적 성질들의 향상은 열처리시 원자 크기가 비슷한 도핑된 Ga 원자들이 일부 휘발되는 Zn 빈자리로 치환하면서 침입자리 보다는 치환자리로의 전이에 기인한 것으로 생각된다.

• Bulletin of the Korean Chemical Society
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• 제29권1호
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• pp.139-147
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• 2008

New PPV derivatives which contain electron-withdrawing CF3F4phenyl group, poly[2-(2-ethylhexyloxy)-5-(2,3,5,6-tetrafluoro-4-trifluoromethylphenyl)-1,4-phenylenevinylene] (CF3F4P-PPV), and poly[2-(4-(2-etylhexyloxy)-phenyl)-5-(2,3,5,6-tetrafluoro-4-trifluoromethylphenyl)-1,4-phenylenevinylene] (P-CF3F4P-PPV), have been synthesized by GILCH polymerization. As the result of the introduction of the electron-withdrawing CF3F4phenyl group to the phenyl backbone, the LUMO and HOMO energy levels of CF3F4P-PPV (3.14, 5.50 eV) and P-CF3F4P-PPV (3.07, 5.60 eV) were reduced. The PL emission spectra in solid thin film are more red-shifted over 50 nm and increased fwhm (full width at half maximum) than solution conditions by raising aggregation among polymer backbone due to electron withdrawing effect of 2,3,5,6-tetrafluoro-4-trifluoromethylphenyl group. The EL emission maxima of CF3F4P-PPV and P-CF3F4P-PPV appear at around 530-543 nm. The current density-voltage-luminescence (J-V-L) characteristics of ITO/PEDOT/polymer/Al devices of CF3F4P-PPV and P-CF3F4P-PPV show that turn-on voltages are around 12.5 and 7.0 V, and the maximum brightness are about 82 and 598 cd/m2, respectively. The maximum EL efficiency of P-CF3F4P-PPV (0.51 cd/A) was higher than that of CF3F4P-PPV (0.025 cd/A).

• 대한방사선기술학회지:방사선기술과학
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• 제39권4호
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• pp.571-575
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• 2016

본 연구에서는 몬테칼로 전산모사 코드인 GATE6 (Geant4 Application for Tomographic Emission ver.6)를 사용하여 의료용 선형 가속기인 Varian사의 Clinac 21EX를 모사하고, 6 MV 광자선의 선량 특성을 평가하였다. 몬테칼로 방법은 방사선 치료시 환자 내의 선량분포를 계산하는 가장 정확한 방법으로 널리 이용되고 있다. 몬테칼로 기반의 코드를 이용하여 선형가속기의 조사 헤드부를 통과하는 입자의 흐름을 모사하는 것은 조사선량을 정량화 하는데 필요한 입자들의 에너지, 공간 분포와 같은 임상적인 빔의 특성을 결정하기 위한 실용적인 방법이다. 본 연구에서 모사한 선형가속기의 조사 헤드부는 빔 경로에 위치한 타겟, 일차 콜리메이터, 선속 평탄 필터, 이온전리함, 이차 콜리메이터로 구성된다. 모사된 선형가속기를 이용하여 선원-표면간 거리 100 cm, 조사야 $10{\times}10cm^2$ 조건에서 물팬텀 내의 광자선 에너지 스펙트럼(energy spectrum), 심부선량백분율(percentage depth dose), 선량프로파일(dose profiles)을 측정하였으며, 이 결과값을 실험 측정값과 비교하여 정확성을 검증하였다. 본 연구에서는 모사를 통한 결과값과 실험값이 매우 일치함을 보였으며, 이를 통해 GATE6 전산모사 코드는 방사선치료에 사용되는 광자선을 모사하기에 효과적임을 입증하였다.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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• pp.5-6
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• 2002

The new spectrometer for X-ray Induced Electron Emission Spectroscopy (XIEES) .has been recently developed in KRISS in collaboration with PTI (Russia). The spectrometer allows to perform research using the XAFS, SXAFS, XANES techniques (D.C.Koningsberger and R.Prins, 1988) as well as the number of techniques from XIEES field(L.A.Bakaleinikov et all, 1992). The experiments may be carried out with registration of transmitted through the sample x-rays (to investigate bulk samples) or/and total electron yield (TEY) from the sample surface that gives the high (down to several atomic mono-layers in soft x-ray region) near surface sensitivity. The combination of these methods together give the possibility to obtain a quantitative information on elemental composition, chemical state, atomic structure for powder samples and solids, including non-crystalline materials (the long range order is not required). The optical design of spectrometer is made according to Johannesson true focusing schematics and presented on the Fig.1. Five stepping motors are used to maintain the focusing condition during the photon energy scan (crystal angle, crystal position along rail, sample goniometer rail angle, sample goniometer position along rail and sample goniometer angle relatively of rail). All movements can be done independently and simultaneously that speeds up the setting of photon energy and allows the using of crystals with different Rowland radil. At present six curved crystals with different d-values and one flat synthetic multilayer are installed on revolver-type monochromator. This arrangement allows the wide range of x-rays from 100 eV up to 25 keV to be obtained. Another 4 stepping motors set exit slit width, sample angle, channeltron position and x-ray detector position. The differential pumping allows to unite vacuum chambers of spectrometer and x-ray generator avoiding the absorption of soft x-rays on Be foil of a window and in atmosphere. Another feature of vacuum system is separation of walls of vacuum chamber (which are deformed by the atmospheric pressure) from optical elements of spectrometer. This warrantees that the optical elements are precisely positioned. The detecting system of the spectrometer consists of two proportional counters, one scintillating detector and one channeltron detector. First proportional counter can be used as I/sub 0/-detector in transmission mode or by measuring the fluorescence from exit slit edge. The last installation can be used to measure the reference data (that is necessary in XANES measurements), in this case the reference sample is installed on slit knife edge. The second proportional counter measures the intensity of x-rays transmitted through the sample. The scintillating detector is used in the same way but on the air for the hard x-rays and for alignment purposes. Total electron yield from the sample is measured by channeltron. The spectrometer is fully controlled by special software that gives the high flexibility and reliability in carrying out of the experiments. Fig.2 and fig.3 present the typical XAFS spectra measured with spectrometer.

• 한국재료학회지
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• 제26권2호
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• pp.67-72
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• 2016

$BaMoO_4:Tb^{3+}$ phosphor powders were synthesized with different concentrations of $Tb^{3+}$ ions using the solid-state reaction method. XRD patterns showed that all the phosphors, irrespective of the concentration of $Tb^{3+}$ ions, had tetragonal systems with two main (112) and (004) diffraction peaks. The excitation spectra of the $Tb^{3+}$-doped $BaMoO_4$ phosphors consisted of an intense broad band centered at 290 nm in the range of 230-330 nm and two weak bands. The former broad band corresponded to the $4f^8{\rightarrow}4f^75d^1$ transition of $Tb^{3+}$ ions; the latter two weak bands were ascribed to the $^7F_2{\rightarrow}^5D_3$ (471 nm) and $^7F_6{\rightarrow}^5D_4$ (492 nm) transitions of $Tb^{3+}$. The main emission band, when excited at 290 nm, showed a strong green band at 550 nm arising from the $^5D_4{\rightarrow}^7F_5$ transition of $Tb^{3+}$ ions. As the concentration of $Tb^{3+}$ increased from 1 to 10 mol%, the intensities of all the emission lines gradually increased, approached maxima at 10 mol% of $Tb^{3+}$ ions, and then showed a decreasing tendency with further increase in the $Tb^{3+}$ ions due to the concentration quenching effect. The critical distance between neighboring $Tb^{3+}$ ions for concentration quenching was calculated and found to be $12.3{\AA}$, which indicates that dipole-dipole interaction was the main mechanism for the concentration quenching of the $^5D_4{\rightarrow}^7F_5$ transition of $Tb^{3+}$ in the $BaMoO_4:Tb^{3+}$ phosphors.

• 새물리
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• 제68권11호
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• pp.1196-1202
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• 2018

고상 반응법을 이용하여 처음으로 $Li_2SrSiO_{4-{\alpha}}N_{\alpha}:Eu^{2+}$ 형광체를 제조하고, 제조된 시료들에 대한 결정성 및 광학적 특성을 비교, 분석하였다. 제조된 시료들은 모두 230~530 nm의 넓은 영역에서 효율적인 여기 특성을 보이고 있다. 본 연구에 사용된 시료들 모두 568 nm에서 최대 발광 세기를 보이는데 이는 현재 상용 중인 $YAG:Ce^{3+}$에 비하여 최대 발광 세기가 약 18 nm 장파장 영역으로 이동함을 의미한다. 따라서 450 nm의 빛을 발하는 청색 LED와 결합하면, $YAG:Ce^{3+}$를 사용하여 상용화된 기존의 백색광보다 보다 따듯한 느낌의 백색광원용 형광체로 활용될 수 있으리라 판단한다. 또한 질소의 원료 물질로 사용된 $Si_3N_4$의 분말크기가 마이크론인 경우에 광활성 이온인 $Eu^{2+}$가 첨가되지 않아도 모체발광이 일어난다는 것을 처음으로 알게 되었다.

• 한국재료학회지
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• 제12권11호
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• pp.840-844
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• 2002

A spherical $BaMgAl_{10}$ $O_{17}$ :Eu phosphor has been synthesized by a multi-step precipitation route. In order to successfully synthesize the phosphor with spherical shape, the hydrated-alumina particles should be controlled for spherical shape. In this process, the hydroxypropyl cellulose (HPC) was used as a dispersing reagent. This reagent plays an important role in that the particles were controlled to have the uniform size of sub-micron. The final product prepared by the multi-step precipitation method maintained spherical shape with uniform size of 0.4$\mu\textrm{m}$. It can be seen in X-ray diffraction patterns, formation of the single phase of $BaMgAl_{10}$ $O_{17}$ :Eu phosphor prepared by the multi-step precipitation method at $1350^{\circ}C$. Also, the emission spectra of spherical $BaMgAl_{O}$ $10_{17}$ :Eu phosphor in the present case was compared with those of commercially-available blue phosphor under VUV (Vacuum Ultra Violet) excitation. The luminescence process of the $BaMgAl_{10}$ $O_{17}$ :Eu phosphor is characterized by the $4f^{6}$$5d^1$longrightarrow4f$^{7}$ transition (blue) of the $Eu^{2+}$ ion acting as an activating center and the maximum luminescence intensity was obtained by reduction treatment at 145$0^{\circ}C$.