• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.540-540
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• 2013

In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped ethylcyclohexane plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Ethylcyclohexenewas used as organic precursor (carbon source) with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. The ellipsometry results showed the refractive index change of the N-doped ethylcyclohexene plasma polymer film. The FT-IR spectrashowed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.49-54
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• 1998

The growth of diamond films in plasma enhanced chemical vapor deposition(PECVD) processes requires high substrate temperatures and gas pressures, as well as high-power excitation of the gas source. Thus determining the substrate temperature in this severe environment is a challenge. The issue is a critical one since substrate temperature is a key parameter for understanding and optimizing diamond film growth. The precise Si substrate temperature calibration based on rapid-scanning spectroscopic ellipsometry have been developed and utilized. Using the true temperature of the top 200 ${\AA}$ of the Si substrate under diamond growth conditions, real time spectroellipsometry (RTSE) has been performed during the nucleation and growth of nanocrystallind thin films prepared by PECVD. RTSE shows that a significant volume fraction of nondiamond(or{{{{ {sp }^{2 } -bonded}}}}) carbon forms during thin film coalescence and is trapped near the substrate interface between ∼300 ${\AA}$ diamond nuclei.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.1-4
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• 2003

We have developed a rotating compensator spectroscopic ellipsometer (RCSE). As the ellipsometry measures a change in the polarization state of a light wave upon non-normal reflection from surface, the degree of sensitivity is enhanced greatly through the detection of relative phase change. RCSE acquires additional information from the non-ideal surface of sample and operates over the photon energy range from 1.5 to 4.5 eV. We applied RCSE to measure the optical properties of films and the line-width of patterned PR films on crystalline silicon.

• Journal of the Korean Ceramic Society
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• v.47 no.4
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• pp.353-356
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• 2010

Zinc oxide (ZnO) thin films were deposited using atomic layer deposition. The electrical and optical properties were characterized using Hall measurements, spectroscopic ellipsometry and UV-visible spectrophotometry. The electronic concentration and the mobility were found to be critically dependent on the deposition temperature, exhibiting increased resistivity and reduced electronic mobility at low temperature. The corresponding optical properties were measured as a function of photon energy ranging from 1.5 to 5.0 eV. The simulated extinction coefficients allowed the determination of optical band gaps, i.e., ranging from 3.36 to 3.41 eV. The electronic carrier concentration appears to be related to the reduction in the corresponding band gap in ZnO thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.342.2-342.2
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• 2014

IZO, ITO, ITO 등의 투명전극들 중 Indium Tin Oxide (ITO) 다른 전극에 비해 높은 광투과도와 낮은 저항으로 인하여 다양한 부분에서 널리 이용되고 있다. 본 연구에서는 우수한 투과도의 멀티 layer 단열 창호를 위한 film 개발을 위해 RF magnetron system을 이용하여 Sodalime Glass와 polyethylene terephthalate (PET) substrate에 ITO를 증착함으로써 전기적 광학적 특성을 조사하였다. 실험은 power 변화와 Ar, O2의 가스 분압비, Working Pressure의 변화를 변수로 두어 진행하였다. 측정은 Ellipsometry를 이용하여 광학적인 두께와 굴절률을 조사하였고 UV visible spectrometer를 통해 광학적인 투과도를 확인하였다. Power는 100 Watt 늘려가며 진행하였고 O2 유량의 변화에 따라 투과도와 면저항, 굴절률 특성이 달라짐을 확인할 수 있었다. O2의 유량에 따라 면저항이 줄어들다가 어느 정도 이상이 되면 급격히 증가함을 확인할 수 있었다. Working Pressure 변화에 따른 전기적 광학적 특성 또한 확인 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.341.2-341.2
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• 2014

산화물 반도체는 가시광선 영역인 380~780 nm 부근에서의 투과율이 80% 이상이고, 3.2 eV 이상의 band gap과 높은 mobility를 가지는 물질로서 투명한 스마트 창호필름이나 디스플레이에 유망한 물질로 연구되고 있다. 본 연구에서는 스마트 윈도우에 적용되는 높은 가시광 투과율과 적외선 차단을 위한 필름개발을 목적으로 산화물 반도체인 $TiO_2$ 물질을 RF Sputter를 이용하여 상온에서 박막성장을 하였다. Glass와 PET 위에 동시에 성장시켜 각각의 기판에 성장된 $TiO_2$ 박막의 물리적인 성질 등을 조사하였다. 측정은 Ellipsometry를 이용하여 광학적인 두께와 굴절률을 조사하였고 UV visible spectrometer를 통해 광학적인 투과도를 확인하였다. 100Watt 부터 RF power를 높여가며 Working Pressure 변화변 주었을 때 낮은 RF power와 Working Pressure에서 높은 가시광 투과율을 확인 할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.207.2-207.2
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• 2014

ZnO는 큰 액시톤 결합에너지(60 meV)와 넓은 밴드갭(3.36 eV)을 가지고 있어 광소자 분야에서 다양하게 연구 되어지고 있다. 또한 높은 광 투과도로 인해 여러 투명 제품 분야에도 적용되어지고 있다. 본 연구에서는 높은 가시광 투과도와 함께 근적외선 차폐를 위한 스마트 필름 제작을 위해 RF sputter를 이용하여 상온에서 ZnO 나노박막을 제작하여 광학적인 특성들을 분석하였다. 실험은 Glass 와 PET 위에 동시에 성장시켜 RF power 변화와 Ar, O2의 가스 분압비, Working Pressure의 변화를 변수로 두어 진행하였다. 측정은 Ellipsometry를 이용하여 광학적인 두께와 굴절률을 조사하였고 UV visible spectrometer를 통해 광학적인 투과도를 확인하였다.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.2
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• pp.52-55
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• 2001

We report best dielectric function of ZnS by spectroscopic ellipsometry in the 3.7 - 6.0 eV photon energy range at room temperature. Using proper wet chemical etching procedure, natural overlayer was removed to obtain the pure dielectric function of ZnS, which had a higher <$\xi$$_2$> value at the El band gap peak than that previously reported. We also determined the dielectric property of the natural overlayer on ZnS by following the evolution of <$\xi$$_2$> with chemical etching. We found that the optical property of the overlayer was well described by amorphous semiconductor model.

• Journal of the Optical Society of Korea
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• v.18 no.2
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• pp.156-161
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• 2014

Anisotropy profile of a rubbed polyimide film is investigated using both a modified ultra high precision transmission ellipsometer and the analysis software previously developed to determine the optic axis distribution of discotic liquid crystals in the wide view film. The distorted sinusoidal variation of the ellipsometric constants obtained at an oblique angle of incidence indicates that the optic axis varies from $14.7^{\circ}$ to $40.6^{\circ}$ from the sample plane. The magnitude and distribution of anisotropy is expressed in terms of no, ne, and the cosine-shaped tilt angle distribution of the optic axis in a rubbed polyimide film.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.23-26
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• 2003

The general users find difficulties in using ellipsometers. Thus, the object of this study is to construct an ellipsometer with simple operation principle. We developed an ellipsometer which does not require alignment and calibration before measuring sample. A basis structure model after rotating a compensator spectroscopic ellipsometry, the fixed incidence angle at $70^{\circ}$. This ellipsometer does not demand calibration, because the plane of incidence is not changed due to the novel sample holder structure. The results for various standard samples were compared with those from conventional RCSE to test the performance of this instrument. Also repeated measurements were performed to test the precision of the calibration coefficient in a plane of incidence fixed.