• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2004.05a
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• pp.169-173
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• 2004

Rotating Compensator Ellipsometry에 회전하는 시편 홀더를 갖추었을 때 uniaxial한 시편의 광축과 retardance를 측정하는 것이 매우 간단해진다. 이것은 Dual Rotating Compensator Transmission Ellipsometry의 self-calibration과정과 흡사하기 때문이다. 기존의 ellipsometry가 광학 부품들의 입사면에 대한 방위각을 찾는 복잡한 calibration과정과 비등방성 시편의 고속축의 방향을 찾아야 하는 수고를 필요로 하지만 rotating sample and compensator ellipsometry는 self-calibration과 자동으로 고속축의 방향을 찾기 때문에 매우 편리하다. 우리는 이 기술를 정렬된 액정display panel에 적용하여 ~$0.4^{\circ}$ 의 작은 retardance 간을 측정할 수 있었다.

• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.11-19
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• 2019

Spectroscopic ellipsometry is a powerful tool for analyzing optical properties of material. Ellipsometry measurement results is usually given by change of polarization state of probe light, so the measured result should be properly treated and transformed to meaningful parameters by transformation and modeling of the measurement result. In case of hydrogenated amorphous silicon, Tauc-Lorentz dispersion is usually used to model the measured ellipsometry spectrum. In this paper, modeling of spectroscopic ellipsometry result of hydrogenated amorphous silicon using Tauc-Lorentz dispersion is discussed.

• Journal of the Semiconductor & Display Technology
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• v.3 no.1
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• pp.31-34
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• 2004

We develop Mueller-matrix spectroscopic ellipsometry based on dual compensator configuration. This technique is very powerful for measuring surface anisotropy in nano-scale, especially when materials show depolarization. Dual-rotating compensator configuration is adopted with the rotational ratio of 5:3 originally developed by Collins et al[1]. The instrument can provide 250-point spectra over the wavelength range from 230 nm to 820 nm in one irradiance waveform with minimum acquisition time of Tc=10 s. In this work, the results obtained in transmission modes are presented for the initial attempt. We present calibration procedures to diagnose the system from the utilized data collected in transmission mode without sample. We expect that the instrument will have important applications in thin films and surfaces that have anisotropy and inhomogeneity.

• Current Optics and Photonics
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• v.4 no.4
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• pp.345-352
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• 2020

We describe a calibration method to improve the accuracy of interferometric snapshot spectroscopic ellipsometry employing a dual-spectrometer sensor scheme. Conventional spectral wavelength calibration of a spectrometer has been performed by using a calibration lamp having multiple peaks at specific wavelength. This paper shows that such a conventional spectrometer calibration method is inappropriate for the proposed interferometric snapshot spectroscopic ellipsometry to obtain highly accurate ellipsometric phase information. And also, systematic error analysis of interferometric snapshot spectroscopic ellipsometry is conducted experimentally.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1083-1089
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• 2008

We studied the dielectric characteristics of low-k SiOCH thin films by Ellipsometry. The SiOCH thin films were prepared by deposition of BTMSM precursors on p-Si wafer by CCP-PECVD method. The nano-porous structural organic/inorganic hybrid-type of SiOCH thin films correlated directly to the formation of low dielectrics close to pore(k=1). The structural groups including highly dense pores in SiOCH thin films originated the anisotropic geometry type of network structure directing to complex refractive characteristics of SiOCH single layer on the p-Si wafer. The linearly polarized beam of Xe-ramp in the range from 190 nm to 2100 nm introduced to the surface of SiOCH thin film, and the reflected beam was Elliptically polarized by complex refractive coefficients of SiOCH dipole groups. The amplitude variation $\Psi$ and phase variation $\Delta$ of the relative reflective coefficients between perpendicular and parallel components to the incident plane were measured by Ellipsometry. The complex optical constants n and k as well as the dielectric constant and thickness of SiOCH thin films were driven by the measured value of $\Psi$ and $\Delta$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1715-1718
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• 2006

Evaluating method of the device parameters of liquid crystal display (LCD) by means of the renormalized transmission spectroscopic ellipsometry is demonstrated. Dielectric and elastic constant, threshold voltage, pretilt angle, cell gap and Anchoring strength coefficients can be evaluated from the measurement of ellipsometric parameters measured by the symmetrically oblique incidence transmission ellipsometry (SOITE). Furthermore, rapid evaluating method for rubbed polyimide film is also demonstrated.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.3-9
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• 2002

Rotating compensator spectroscopic ellipsometry의 개발과 그의 응용에 대하여 연구하였다. Spectroscopic ellipsometry는 편광된 빛이 물체의 표면에서 반사된 후 빛의 편광된 상태를 넓은 파장의 영역에 걸쳐서 측정하여 그 물질의 광학적 특성을 알아 낼 수 있는 기술이다. RCSE의 경우 얇은 투명 박막에 보다 정확한 값을 줄 뿐만 아니라, 박막의 균질도를 알 수 있는 편광 정도을 측정을 할 수 있다. 본 장비의 측정 시간은 십여 초 정도이고, 분광 범위는 1.5 eV ~ 4.5 eV이다. RCSE를 이용한 박막의 광학적 물성과 두께 그리고 deep-UV용 감광제의 선폭을 측정하였다.

• Bulletin of the Korean Chemical Society
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• v.12 no.5
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• pp.477-483
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• 1991

In the three-parameter ellipsometry (TPE), also known as reflectance-ellipsometry, the ellipsometric measurements, ${\Psi} and {\Delta}$, are combined with the reflectometric measurement, R, to determine the optical parameters and the thickness of a light-absorbing thin film. The constant ${\Psi}, {\Delta}$ and R surfaces are analyzed graphically to understand the nature of the TPE solutions. A sensitivityanalysis is shown to be useful not only for identifying the film properties which affect most the TPE measurements, but also for estimating errors in film properties arising from the uncertainties in measurements.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.37-39
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• 2006

We employed in-situ spectroscopic ellipsometry(SE) and imaging ellipsometry(IE) to study the interaction of water and photoresist(PR) in 193 immersion lithography. Real time measurement of SE showed thickness increase when PR was immerged in water indicating swelling effect. From the temporal evolution we could observe its reaction-limited behavior. Meanwhile, IE could identify the modification of PR surface by contact of water even for a short period of a second.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.371-377
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• 1998

The plasma chemical vapor deposition is one of the most utilized techniques for the diamond growth. As the applications of diamond thin films prepared by plasma chemical vapor deposition(CVD) techniques become more demanding, improved fine-tuning and control of the process are required. The important parameters in diamond film deposition include the substrate temperature, $CO/H_2$gas flow ratio, total gas pressure, and gas excitation power. With the spectroscopic ellipsometry, the substrate temperature as well as the various parameters of the film can be determined without the physical contact and the destructiveness under the extreme environment associated with the diamond film deposition. Through this paper, the important parameters during the diamond film growth using $CO+H_2$are determined and it is shown that $sp^2$ C in the diamond film is greatly reduced.