• Journal of the Korean earth science society
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• v.26 no.8
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• pp.800-808
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• 2005

Elemental mobility during the weathering of granite in the Gwangju Hyangdeung area was investigated using ICP-MS analysis. It appeared that Al, Fe, Ti, K were lost from the profile, whereas Si, Ca, Na Mg, P and Mn were immobile during chemical weathering. In less weathered soil, large enrichment of K and Ti were found relative to Al, whereas other elements such as Si, Ca, Na, Mg and P are deplete. Fe content is constant throughout the weathered profiles. Amounts of Rb, Sr, Y, Cs, Pb, Th and U increased toward the surface. Nb, and Co have accumulated in the deepest parts of the weathered soil profile. These results agree with similar published studies. In addition, the analytical data shows that Ba and Ga increased, while Cu, Zn, Cr and Ni were relatively constant in this area. REE tend to increase in most samples, while LREEs, relative to Al, were enriched in the lower and upper saprolite. HREEs were enriched in the lower and upper saprolite.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.326-329
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• 2007

$CuInS_{2}$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_{2}$ thin films with non-stoichiometry composition. $CuInS_{2}$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/ln/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^{2}/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Bulletin of the Korean Chemical Society
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• v.33 no.5
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• pp.1659-1663
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• 2012

New semiconducting polymer, poly[1,4-bis(($E$)-2-(5-bromo-3-dodecylthiophen-2-yl)vinyl)benzene], was designed, synthesized and characterized. The structure of polymer was confirmed by $^1H$-NMR, IR and elemental analysis. The polymer was soluble in specific organic solvent. The weight-average molecular weights (MW) of polymer was found to be 11,000 with polydispersity of 1.82. UV-Visible absorption spectrum showed the maximum absorption at 428 nm (in solution) and 438 nm (in film). The highest occupied molecular orbital (HOMO) energy of the polymer is -5.36 eV by measuring cyclic voltammetry (CV). A solutionprocessed polymer thin film transistor device shows a mobility of $8.59{\pm}10^{-4}\;cm^2\;V^{-1}\;s^{-1}$, an on/off current ratio of $2.0{\times}10^4$.

• Carbon letters
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• v.13 no.1
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• pp.44-47
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• 2012

We analyzed the effect of etchants for metal catalysts in terms of the characteristics of resulting graphene films, such as sheet resistance, hall mobility, transmittance, and carrier concentration. We found the residue of $FeCl_3$ etchant degraded the sheet resistance and mobility of graphene films. The residue was identified as an iron oxide containing a small amount of Cl through elemental analysis using X-ray photoelectron spectroscopy. To remove this residue, we provide an alternative etching solution by introducing acidic etching solutions and their combinations ($HNO_3$, HCl, $FeCl_3$ + HCl, and $FeCl_3+HNO_3$). The combination of $FeCl_3$ and acidic solutions (HCl and $HNO_3$) resulted in more enhanced electrical properties than pure etchants, which is attributed to the elimination of left over etching residue, and a small amount of amorphous carbon debris after the etching process.

• Journal of Korean Society for Atmospheric Environment
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• v.26 no.2
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• pp.107-117
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• 2010

The atmospheric geochemistry of mercury is generalls represented by gaseous elemental phase that exhibits the high environmental mobility and relatively long atmospheric residence time (c.a., 1 year) with its high chemical stability. In the recognition of the environmental significance of its global cycling, enormous efforts have been devoted to the measurements of Hg exchange across air-soil boundary. To be able to describe the fundamental aspects on this subject, the current development in the measurements of atmospheric exchange rates of mercury has been summarized using the current database reported worldwide. As a first step, different techniques commonly employed in its measurements are introduced with the discussions on their merits and disadvantages. Then, the results derived from various field measurement campaigns are also compared and discussed. The direction for the future study of mercury is presented at last.

• Journal of Information Display
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• v.10 no.3
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• pp.121-124
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• 2009

In this study, 6,13-Bis(4-propylphenyl)pentacene was synthesized and characterized. The structures of the products that were obtained during the reaction steps were identified via FT-IR and NMR spectroscopy and elemental analysis. The compound was found to be soluble in organic solvents like chloroform, dichloromethane, THF, and toluene. The charge transport mobility was $10^{-4}cm^2V^{-1}s^{-1}$, and the on/off current ratio was $10^2$, while the compound was 2.5 times more stable under oxidation in a solution compared with pentacene.

• Journal of Oral Medicine and Pain
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• v.9 no.1
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• pp.29-33
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• 1984

Dental mercury was injected accidentally to left upper buccal mucosa of a 16-year-old girl by charlatan in order to anesthetize a tooth for extraction; thereafter,injected elemental mercury was almost removed by drug adimnistration and surgical operations.One year have passed, still, there are many scaffered small radiopaque white globular cimages in dental, maxillo-facial, and chest radiographs. Redish swollen gingiva and mobility of left upper central incisor which is adjacent to mercury injection site are oral manifestations in this mercury poisoning case. Recently, the patient complains of metallic taste, gastric discomfort and abdominal pain which are thought to be symptoms of mercury poisoning, but there seems to be no serious sequelae now.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.98.2-98.2
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• 2010

$CuInS_2$ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.15-17
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• 2008

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502[$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.261-262
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.