• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.567-574
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• 2016

We have analyzed chemical properties of polysiloxane and polysilazane films, respectively, as sealing materials for electrostatic chuck (ESC) and have investigated the possibility of polysilazane as an alternative sealant to polysiloxane. It has been revealed that Si-O with organic bonding ($Si-CH_3$) existed in polysiloxane films compared to only pure Si-O bonding in polysilazane films. The sealing property of polysilazane has been found outstanding even in a short time of application. In the polysiloxane films containing $H_2O$, pin holes have been found possibly due to $CO_2$ gas evolution, and low adhesion with Si substrate has been observed after heat stress test in connection with the existence of organic bonding. After acid resistance test in 0.5 vol.% HF, 68 wt.% $HNO_3$, and 37 wt.% HCl solution, polyilazane films have shown a longer survival times. Compared to the conventional polysiloxane sealant, polysilazane is expected as a new sealing material because of good thermal and chemical stability.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.87-90
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• 1999

It was suggested that tape casting method can be used to fabricate high-temperature electrostatic chucks(HTESC) based on a metal substrate coated with a glass-ceramic insulating layer. The adhesion of the coating was excellent such that it was able to withstand temperature cycling to over $300^{\circ}C$ without spalling. The electrostatic clamping pressure reached a very high value of about 9 torr at 600V and generally followed the theoretical voltage-squared curve. Based on these results, we believe that we successfully developed a viable technique for manufacturing low cost HTESC.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.193-193
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• 1999

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.169-172
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• 2002

This study demonstrated the feasibility of using tape-casting followed by sintering as a low-cost alternative for coating glass-ceramic or glass film on a metal substrate. The process has been successfully used to fabricate a glass-on-stainless steel and a glass-ceramic-on-molybdenum electrostatic chuck(ESC) with the insulating layer thickness about $150{\mu}{\textrm}{m}$. Electrical resistivity data of the coaling were obtained between room temperature and 55$0^{\circ}C$; although the resistivity values dropped rapidly with increasing temperature in both coatings, the glass-ceramic still retained a high value of $10^{10}$ ohm-cm at $500^{\circ}C$. Clamping pressure measurements were done using a mechanical apparatus equipped with a load-cell at temperatures up to $350^{\circ}C$ and applied voltages up to 600V; the clamping behavior of all ESCs generally followed the voltage-squared curve as predicted by theory. Based on these results, we believe that we have a viable technology for manufacturing ESCs for use in reactive-ion etch systems.

• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.481-486
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• 1999

Alumina electrostatic chucks for silicon wafer process with wide range of electrical resistivity were fabricated by controlling the amount of $TiO_2$ addition(0, 1.3, 2.0, 2.8 wt%). The dependence of electrostatic force on applied voltage, temperature and humidity was investigated. In addition, response characteristics on applied voltage and relationship between electrical resistivity and electrostatic force characteristics such as Coulomb force and Johnsen-Rahbeck force were discussed.

• Elastomers and Composites
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• v.50 no.1
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• pp.55-61
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• 2015

Manufacturing process of OLED contains adsorption-desorption process of glass substrate. There are several adsorption methods of glass substrate such as atmospheric pressure, vacuum and electrostatic adsorption. However, these methods are very complex to connect system. Therefore, the adsorption method using silicone rubber based sticking chuck was proposed in this study. Three types of silicone rubbers having 0, 19.3 and 32.2 wt% of fluorine were used and their mechanical properties, surface energies and adsorption properties were examined. According to the results ${\sigma}_{300}$ and hardness increased with increasing fluorine contents, but elongation was decreased. Also, fluorosilicone rubber containing 32.2 wt% of fluorine showed the lowest surface tension, among three types of rubber and resulted in the highest initial tack with glass substrate. After the adsorption-desorption test of 300,000 cycles was performed, the adsorption force of S-1 (silicone rubber) decreased largely from 2.34 to 0.73 MPa. However, the S-3 (fluorosilicone rubber having 32.2 wt%. of fluorine) decreased only from 3.15 to 2.24 MPa. From this study, we obtained the valuable equations related to long term durability of silicone based sticking chuck. Finally the transfer of silicone rubber to glass substrate with the adsorption-desorption process was not occurred and this phenomenon was examined by UV-Visible spectroscopy.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.275-276
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• 2013

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.19-24
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• 2021

As the size of semiconductor devices decreases, the etching pattern becomes very narrow and a deep high aspect ratio process becomes important. The cryogenic etching process enables high aspect ratio etching by suppressing the chemical reaction of reactive ions on the sidewall while maintaining the process temperature of -100℃. ESC is an important part for temperature control in cryogenic etching equipment. Through the cooling path inside the ESC, liquid nitrogen is used as cooling water to create a cryogenic environment. And since the ESC directly contacts the wafer, it affects the temperature uniformity of the wafer. The temperature uniformity of the wafer is closely related to the yield. In this study, the cooling path was designed and analyzed so that the wafer could have a uniform temperature distribution. The optimal cooling path conditions were obtained through the analysis of the shape of the cooling path and the change in the speed of the coolant. Through this study, by designing ESC with optimal temperature uniformity, it can be expected to maximize wafer yield in mass production and further contribute to miniaturization and high performance of semiconductor devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.390-393
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• 2001

This study demonstrated the feasibility of tape casting method to fabricate soda borosilicate glass-coated stainless steel electrostatic chucks(ESC) for low temperature semiconductor processes. The glass coatings on the stainless steel substrates ranged from $100{\mu}m$ to $150{\mu}m$ thick. The adhesion of the glass coatings was found to be excellent such that it was able to withstand moderate impact tests and temperature cycling to over $300^{\circ}C$ without cracking and delamination. The electrostatic clamping pressure generally followed the theoretical voltage-squared curve except at elevated temperatures and higher applied voltages when deviations were observed to occur. The deviation is due to increased leakage current at higher temperature and applied voltage as the electrical resistivity drops.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.390-393
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• 2001

This study demonstrated the feasibility of tape casting method to fabricate soda borosilicate glass-coated stainless steel electrostatic chucks(ESC) for low temperature semiconductor processes. The glass coatings on the stainless steel substrates ranged from 100 $\mu\textrm{m}$ to 150 $\mu\textrm{m}$ thick. The adhesion of the glass coatings was found to be excellent such that it was able to withstand moderate impact tests and temperature cycling to over 300$^{\circ}C$ without cracking and delamination. The electrostatic clamping pressure generally followed the theoretical voltage-squared curve except at elevated temperatures and higher applied voltages when deviations were observed to occur. The deviation is due to increased leakage current at higher temperature and applied voltage as the electrical resistivity drops.