• ETRI Journal
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• 제23권4호
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• pp.168-176
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• 2001

This paper discusses two important issues of corpus-based synthesis: synthesis unit generation based on phrase break strength information and pruning redundant synthesis unit instances. First, the new sentence set for recording was designed to make an efficient synthesis database, reflecting the characteristics of the Korean language. To obtain prosodic context sensitive units, we graded major prosodic phrases into 5 distinctive levels according to pause length and then discriminated intra-word triphones using the levels. Using the synthesis unit with phrase break strength information, synthetic speech was generated and evaluated subjectively. Second, a new pruning method based on weighted vector quantization (WVQ) was proposed to eliminate redundant synthesis unit instances from the synthesis database. WVQ takes the relative importance of each instance into account when clustering similar instances using vector quantization (VQ) technique. The proposed method was compared with two conventional pruning methods through objective and subjective evaluations of synthetic speech quality: one to simply limit the maximum number of instances, and the other based on normal VQ-based clustering. For the same reduction rate of instance number, the proposed method showed the best performance. The synthetic speech with reduction rate 45% had almost no perceptible degradation as compared to the synthetic speech without instance reduction.

• 반도체디스플레이기술학회지
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• 제4권3호
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• pp.5-9
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• 2005

The bonding structure of organic materials such as fluorinated amorphous carbon films was classified into two types due to the chemical shifts. The electrical properties of fluorinated amorphous carbon films also showed very different effect of two types notwithstanding a very little difference. Fluorinated amorphous carbon films with the cross-link break-age structure existed large leakage current resulting from effect of the electron tunneling. Increasing the cation due to the electron-deficient group increased the barrier height of the films with the cross-link amorphous structure, therefore the electric characteristic of the final materials with low dielectric constant was also improved. The lowest dielectric constant is 2.3 at the sample with the cross-link amorphous structure.

• 경영과정보연구
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• 제17권
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• pp.289-313
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• 2005

Electronic commerce is giving rise to many new and innovative 'gest business practices,' such as telecommuting and the virtual workplace. Telecommuting and the virtual workplace go hand in hand. Today, more then 35 million people in the United States telecommute, and that expected to grow by 20 percent over the next several years. And more then 30 million people used internet shopping mall every years in Korea. Therefore, using the internet and information technology, electronic commerce has the potential to propel a company to 'break out' of existing strategic constraints and radically alter business processes, strengthen customer and supplier ties, and open up new markets. The object of this study is the investigation method for activity solution of electronic commerce of fashion cloth shopping mall in korea. The study has investigated 2 cases about 'halfclub.com' in Korea and 'bluefly.com' in America in the research. Therefore, the study founded the 3problems of electronic commerce at fashion cloth shopping mall in korea and suggested that the activation policies of electronic commerce. The result of suggested that the new electronic commerce style, a lot of contents affects positive effects on the performance of fashion cloth shopping mall in Korea and hope that will be expect new role of electronic commerce to be the herb in fashion cloth shopping mall in korea.

• 한국생산제조학회지
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• 제8권3호
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• pp.23-27
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• 1999

A lot of electronic parts are used for recent vehicles. If electronic parts break down, it will bring passenger to fatal wound. The very representative trouble of electronic parts is a cut aluminium wire of a hybrid IC. In this study, I analyzed a cause of cut aluminium wire and the main results obtained on this study are summarized as follows; (1) The forces acting on the aluminium wire are because of thermal expansion of a resin. (2) The forces acting on the aluminium wire are obtained by the theoretical analysis and those results are agree well with those of the FEM.

• 전기의세계
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• 제16권3호
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• pp.21-27
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• 1967

We meet with the fact that a majority of electric machinery have been insulated to the state of solids & liquids or solids & gases, that is, with compound dielectrics. And also we can find voids caused by undesirbble structure, long-used material and so on. When it is discharged in a void or in the parts of gases of insulating material, the insulation of the machinery is gradually and finally destroyed through the effect of ozone, nitrogen-oxide, electronic pulses and so on. So we maybe conculded that it is necessary and important to detected void pulse and void corona in order to prevent sudden break down of electric machinery.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.184.2-184.2
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• 2014

Recent advances in the synthesis and characterization of nanoscale objects provided us with the atomistic understanding of charge transport through single molecular junctions. The representative examples are the mechanically controlled break junction technique and STM or conducting AFM junction techniques. Theoretical studies have been reported on the dependence of electronic charge transport on the geometry of molecule-electrode contacts, the critical element toward the realization of molecular electronics. In this report, we will clarify the puzzling discrepancies between theoretical predictions and experiments.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.355-358
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• 2004

In this work, N-LDMOSFET(Lateral Double diffused MOSFET) was designed and fabricated on SOI(Silicon-On-Insulator) substrate, for such applications as motor controllers and high voltage switches, fuel injection controller systems in automobile and SSR(Solid State Rexay)etc. The LDMOSFET was designed to overcome the floating body effects that appear in the conventional thick SOI MOS structure by adding p+ region in source region. Also, RESURF(Reduced SURface Field) structure was proposed in this work in order to reduce a large on-resistance of LDMOSFET when operated keeping high break down voltage. Breakdown voltage was 268v in off-state ($V_{GS}$=OV) at room temperature in $22{\mu}m$ drift length LDMOSFET. When 5V of $V_{GS}$ and 30V of $V_{DS}$ applied, the on resistance(Ron), the transcon ductance($G_m$) and the threshold voltage($V_T$) was 1.76k$\Omega$, 79.7uA/V and 1.85V respectively.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.345-348
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• 2017

In this work, static characteristics of 4H-SiC SJ-ACCUFETs were obtained by adjusting the p-pillar region. The structure of this SJ-ACCUFET was designed by using a two-dimensional simulator. The static characteristics of SJ-ACCUFET, such as the breakdown voltages, on-resistance, and figure of merits, were obtained by varying the p-pillar doping concentration from $1{\times}10^{15}cm^{-3}$ to $5{\times}10^{16}cm^{-3}$ and the thickness from $0{\mu}m$ to $9{\mu}m$. The doping concentration and the thickness of p-pillar region are closely related to the break down voltage and on-resistance and threshold voltages. Hence a silicon carbide SJ-ACCUFET structure with highly intensified breakdown voltages and low on-resistances with good figure of merits can be achieved by optimizing the p-pillar thickness and doping concentration.

• 조명전기설비학회논문지
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• 제25권9호
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• pp.75-79
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• 2011

The MOV(Metal Oxide Varistor), a voltage limiting element, has been installed in the SPD(Surge Protective Device) or inside the internal circuit of an electronic appliance for protection of the electric power system and electronic device against electrical surge. Such an MOV is exposed, however, to the risk of the thermal runaway resulting from excessive voltage and deterioration. In this paper, a reciprocal action has been tested and analyzed using a phosphorus bronze switching module and the low-temperature solder. And a short current break characteristic test linked with the circuit breaker has been performed to limit the inrush current when the MOV breaks down. It has been proven that the phosphorus bronze switching module installed inside the internal circuit can improve the safety of the power line system and the electronic device.

• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.767-770
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• 2010

In this work, we investigated the static characteristics of 4H-SiC vertical metal-oxidesemiconductor field effect transistors (VMOSFETs) by adjusting the doping level of n-epilayer and the effect of a current spreading layer (CSL), which was inserted below the p-base region with highly doped n+ state ($5{\times}10^{17}cm^{-3}$). The structure of SiC VMOSFET was designed by using a 2-dimensional device simulator (ATLAS, Silvaco Inc.). By varying the n-epilayer doping concentration from $1{\times}10^{16}cm^{-3}$ to $1{\times}10^{17}cm^{-3}$, we investigated the static characteristics of SiC VMOSFETs such as blocking voltages and on-resistances. We found that CSL helps distribute the electron flow more uniformly, minimizing current crowding at the top of the drift region and reducing the drift layer resistance. For that reason, silicon carbide VMOSFET structures of highly intensified blocking voltages with good figures of merit can be achieved by adjusting CSL and doping level of n-epilayer.