• Korean Journal of Materials Research
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• v.20 no.6
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• pp.294-300
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• 2010

In this study, we fabricated a polymer light emitting diode (PLED) and investigated its electrical and optical characteristics in order to examine the effects of the PFO [poly(9,9-dioctylfluorene-2-7-diyl) end capped with N,N-bis(4-methylphenyl)-4-aniline] concentrations in the emission layer (EML). The PFO polymer was dissolved in toluene ranging from 0.2 to 1.2 wt%, and then spin-coated. To verify the influence of the TPBI [2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)]electron transport layer, TPBI small molecules were deposited by thermal evaporation. The current density, luminance, wavelength and current efficiency characteristics of the prepared PLED devices with and without TPBI layer at various PFO concentrations were measured and compared. The luminance and current efficiency of the PLED devices without TPBI layer were increased, from 117 to $553\;cd/m^2$ and from 0.015 to 0.110 cd/A, as the PFO concentration increased from 0.2 to 1.0 wt%. For the PLED devices with TPBI layer, the luminance and current efficiency were $1724\;cd/m^2$ and 0.501 cd/A at 1.0 wt% PFO concentration. The CIE color coordinators of the PLED device with TPBI layer at 1.0 wt% PFO concentration showed a more pure blue color compared with the one without TPBI, and the CIE values varied from (x, y) = (0.21, 0.23) to (x, y) = (0.16, 0.11).

• Journal of the Korean Graphic Arts Communication Society
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• v.22 no.1
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• pp.75-82
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• 2004

The photoluminescence and electroluminescence of poly(9-vinylcarbazole) (PVCz) containing different ratio 1.3,5-dimethly-3,5-di-tert-butyl-4,4-diphenoquinone (MBDQ), 1.3,5-diemthyl-3.5-di-tert-butyl-4,4-stylbenquinone (MBSQ) were characterized. As the contents of DQ and SQ increased, the intensity of peaks at 516 and 540nm increased in PL spectra. The results of TOF measurement were shown that the hole mobility of PVCz decreased as the ratio of DQ or SQ increased. On the other hand, the electron mobility of PVCz increased. Therefore Electron transport is more favorable than hole transport in these charge transfer complexes, due to the stronger localization of the holes. Evidence for better electron transport is the higher mobility of electrons in pure DQ or SQ compared to hole mobility in pure PVCz, and lower DQ or SQ concentration required for equivalent mobilities in the charge-transfer complexes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.196-200
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• 2004

Using polyimide Langmuir-Blodgett(LB) films as a tunneling harrier, we fabricated Au/Polyimide/1-layer arachidic acid/Pb structure in order to investigate electron transport properties through a junction. It was found that 9-layer polyimide LB films function as a good tunneling harrier in a study of current-voltage(I-V) chararteristics. And several peaks originating in the vibrational modes of the constituent molecules of 1-layer arachidic acid LB films were clearly observed in d$^2$V/dI$^2$- V corves.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.831-834
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• 2000

Characteristics of organic light-emitting diodes(OLEDs) were studied with devices made by PECCP[poly(3,6-N-2-ethylhexyl carbazolyl cyanoterephthalidene)] Langmuir-Blodget(LB) films. The emissive organic material was synthesized and named PECCP, which has a strong electron donor group and an electron accepter group in main chain repeated unit. The LB technique was employed to investigate the identification of the recombination zone in the ITO/PECCP LB films/Alq$_3$/Al structure by varying the LB film thickness. PECCP was considered as an emissive layer and Alq$_3$was used as an electron-transport layer. We measured current-voltage(I-V) characteristics, UV/visible absorption, PL spectrum, and EL spectrum of those devises.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.955-959
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• 2004

The effects of conduction band offset on 2 dimensional electron gas (2DEG) in N-InAlAs(AlAsSb)/InGaAs/InAlAs (AlAsSb) metamorphic heterostructures (MMHS) are studied. A combination of the Shubnikov-deHaas oscillations and the Hall measurements is used to investigate the electron transport properties of these structures. The mobility in the second subband is higher than that in the first subband in all heterostructures. This is attributed to the fact that electrons in the first subband we, on average, closer to the interface and are therefore scattered more strongly by ionized impurities. The results suggest that intersubband scattering rate is more dominant in structures with higher conduction band offset whereas alloy scattering is found to be more dominant in the higher band offset system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.436-437
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• 2007

Organic light-emitting diodes (OLEDs) were fabricated with the electron dominant complex, 4,7-diphenyl-1, 10-phenanthroline (Bphen) into the traditional electron transporting material of tris (S-hydroxyquinoline) aluminum $(Alq_3)$, neat $Alq_3$ and Bphen as electron-transporting layers (ETLs), respectively. Use of the Bphen material results in efficient electron injection and transport, allowing for high luminous efficiency devices. The devices with neat $Alq_3$(Device1), 1:1 mixed $Alq_3$ : Bphen(Device2), and Bphen(Device3) have efficiency of 15.3cd/A, 16.9cd/A, 20.9cd/A, respectively, at $20\;mA/cm^2$. The efficiency characteristic of device with Bphen is best, but the device that is satisfied high efficiency and stability at once is observed in Device2.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.163.1-163.1
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• 2016

Lead halide perovskites CH3NH3PbX3 (X=Cl, Br, I) have received great interest in the past few years because of their excellent photoelectronic properties as well as their low-cost solution process. Their theoretical efficiency limit of the solar cell devices was predicted around 31% by a detailed balance model for the reason that exceptional light-harvesting and superior carrier transport properties. Additionally, these excellent properties contribute to the applications of optoelectronic devices such as LASERs, LEDs, and photodetectors. Since these devices are mainly using perovskite thin film, one of the most important factor to decide the efficiency of these applications is the quality of the film. Even though, optoelectrical devices are composed of polycrystalline thin film in general, not a single crystalline form which has longer carrier diffusion length and lower trap density. For these reasons, monodomain perovskite thin films have potential to elicit an optimized device efficiency. In this study, we analyzed the crystallography of the in-plane aligned perovskite thin film by X-ray diffraction (XRD) and selected area electron diffraction (SAED). Also the basic optic properties of perovskites were checked using scanning electron microscopy (SEM) and UV-Vis spectrum. From this work, the perovskite which is aligned in all directions both of out-of-plane and in-plane was fabricated and analyzed.

• Journal of Magnetics
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• v.10 no.2
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• pp.66-70
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• 2005

The junction properties between the ferromagnet (FM) and two-dimensional electron gas (2DEG) system are crucial to develop spin electronic devices. Two types of 2DEG layer, InAs and GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. InAs-based 2DEG layer with low trans-mission barrier contacts FM and shows ohmic behavior. GaAs-based 2DEG layer with $Al_2O_3$ tunneling layer is also prepared. During heat treatment at the furnace, arsenic gas was evaporated and top AlAs layer was converted to aluminum oxide layer. This new method of forming spin injection barrier on 2DEG system is very efficient to obtain tunneling behavior. In the potentiometric measurement, spin-orbit coupling of 2DEG layer is observed in the interface between FM and InAs channel 2DEG layers, which proves the efficient junction property of spin injection barrier.

• Korean Journal of Materials Research
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• v.20 no.3
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• pp.137-141
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• 2010

The $(1-x)La_{0.7}Sr_{0.3}MnO_3(LSMO)/xZnFe_2O_4$(ZFO) (x = 0, 0.01, 0.03, 0.06 and 0.09) composites were prepared by a conventional solid-state reaction method. We investigated the structural properties, magnetic properties and electrical transport properties of (1-x)LSMO/xZFO composites using X-ray diffraction (XRD), scanning electron microscopy (SEM), field-cooled dc magnetization and magnetoresistance (MR) measurements. The XRD and SEM results indicate that LSMO and ZFO coexist in the composites and the ZFO mostly segregates at the grain boundaries of LSMO, which agreed well with the results of the magnetic measurements. The resistivity of the samples increased by the increase of the ZFO doping level. A clear metal-to-insulator (M-I) transition was observed at 360K in pure LSMO. The introduction of ZFO further downshifted the transition temperature (350K-160K) while the transition disappeared in the sample (x = 0.09) and it presented insulating/semiconducting behavior in the measured temperature range (100K to 400K). The MR was measured in the presence of the 10kOe field. Compared with pure LSMO, the enhancement of low-field magnetoresistance (LFMR) was observed in the composites. It was clearly observed that the magnetoresistance effect of x = 0.03 was enhanced at room temperature range. These phenomena can be explained using the double-exchange (DE) mechanism, the grain boundary effect and the intrinsic transport properties together.

• Journal of the Korean institute of surface engineering
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• v.38 no.1
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• pp.7-13
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• 2005

Bismuth thin films were prepared on glass substrate with RF magnetron sputtering and effects of substrate temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth after nucleation and the onset of coalescense of grains at 393 K were observed with field emission secondary electron microscopy. Continuous thin films could not be obtained above 473 K because of grain segregation and island formation. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility. Resistivity of bismuth film has its minimum (about 0.7 x 10/sup -3/ Ωcm) in range of 403～433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to cancellation of the decrease of carrier density and the increase of mobility. The abrupt change of electrical properties of film annealed above 523 K was found to be caused by partial oxidation of bismuth layer in x-ray diffraction analysis.