• Journal of Soil and Groundwater Environment
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• v.13 no.1
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• pp.13-23
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• 2008

The triaxial compression tests and consolidation tests using NaCl solution and leachates as substitute pore (or saturated) water in samples were carried out to find out the behavior characteristics of strength, deformation and permeability coefficient of contaminated clay. Also, the chemical property analysis on the clay samples using scanning electron microscope and energy dispersive x-ray spectrometer were involved. The magnitudes of composition ratio were shown in the order of O, C, Si, Al, and Fe as a result of chemical composition analysis for clay samples. Besides, as the results of triaxial compression tests and consolidation tests, the shear strength, compression and permeability properties were increased with increasing in the concentration of contaminant (NaCl). It may be considered that these circumstances be caused by the changes of soil structure to flocculent structure due to the decrease in the thickness of diffuse double layer with increasing in the concentration of electrolyte. MT3D model was also using to grasp the procedures that the groundwater may be contaminated by the leachates permeated through the clay liner. The results of contaminant transport analysis showed a tendency that the predicted concentration of groundwater was higher with increasing in the initial concentration of $Cl^-$ ion and increased as a nonlinear curves with time. The transportation distance calculated by the use of regression equation between the distance from contaminant source and the concentration of $Cl^-$ ion was increased with increasing the initial concentration.

• Korean Journal of Food Science and Technology
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• v.35 no.6
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• pp.1117-1123
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• 2003

The effects of heat treatment on the physical and physical and physiological properties of wax gourd (Benincasa hispida) were examined. The applied heat treatments were autoclaved at $121^{\circ}C$ for 1 hr, boiled for 30 min, and microwaved at 680 W for 5 min. The water retention capacity (WRC) of the wax gourds was 9.43 g/g for the microwaved samples, 5.12 g/g for the boiled samples, 4.63 g/g for the raw samples, and 2.61 g/g for the autoclaved samples. Heat treatment caused to increase swelling by up to $4.4{\sim}7.8\;mL/g$. Calcium binding capacity of heat-treated wax gourd increased in the order of microwaved, boiled, raw, autoclaved samples. Scanning electron microscopy (SME) showed that autoclaving caused the most severe structural modifications, while microwave treatment produced the least modifications. The retarding effect on glucose and bile acid transport depended on the heat treatment. Only boiling showed the glucose retardation effect. Bile acid retardation effect increased in order of boiling (22.9%), autoclaving (17.1%), microwave treatment (14.3%), and raw wax gourd (8.6%). The cadmium retardation effect was significantly high in all samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.14-15
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• 2010

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

• Korean Journal of Materials Research
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• v.30 no.11
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• pp.601-608
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• 2020

In this work, Ag₃PO₄/In₂S₃ nanocomposites with low loading of In₂S₃ (5-15 wt %) are fabricated by two step chemical precipitation approach. The microstructure, composition and improved photoelectrochemical properties of the as-prepared composites are studied by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), photocurrent density, EIS and amperometric i-t curve analysis. It is found that most of In₂S₃ nanoparticles are deposited on the surfaces of Ag₃PO₄. The as-prepared Ag₃PO₄/In₂S₃ composite (10 wt%) is selected and investigated by SEM and TEM, which exhibits special morphology consisting of lager size substrate (Ag₃PO₄), particles and some nanosheets (In₂S₃). The introduction of In₂S₃ is effective at improving the charge separation and transfer efficiency of Ag₃PO₄/In₂S₃, resulting in an enhancement of photoelectric behavior. The origin of the enhanced photoelectrochemical activity of the In₂S₃-modified Ag₃PO₄ may be due to the improved charge separation, photocurrent stability and oriented electrons transport pathways in environment and energy applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• Tuberculosis and Respiratory Diseases
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• v.50 no.2
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• pp.205-212
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• 2001

Background : The information on nasal transport and the metabolism of peptides have been obtained from pharmacokinetic investigations in experimental animals. However, there are no transport and metabolic studies of human nasal epithelial cells. In this study, the permeability characteristics and the metabolic properties of in vitro human nasal cell monolayers were investigated. Material and Methods : Normal human inferior nasal conchal tissue samples were obtained from patients undergoing endoscopic nasal cavitary surgery. The specimens were cultured in a transwell using an air-liquid Interface (ALI) culture, and the transepithelial electrical resistance (TEER) value of the blank filter and confluent cell monolayers were measured. To determine the % leakage of mannitol, $4{\mu}mol%$ $^{14}C$-labelled mannitol was added and the % leakage was measured every 10 minute for 1 hour. Result : Human nasal epithelial cells in the primary culture grew to a confluent monolayer within 7 days and expressed microvilli. The tight junction between the cells was confirmed by transmission electron microscopy. The TEER value of the blank filter, fifth day and seventh day reached $108.5\;ohm.cm^2$, $141\;ohm.cm^2$ and $177.5\;ohm.cm^2$, respectively. Transcellular % leakage of the $^{14}$-mannitol at 10, 20, 30, 40, 50 and 60 minutes was $35.67{\pm}5.43$, $34.42{\pm}5.60$, $32.75{\pm}5.71$, $31.76{\pm}4.22$, $30.96{\pm}3.49$ and $29.60{\pm}3.68\;%$, respectively. Conclusion : The human nasal epithelial monolayer using ALI culture techniques is suitable for a transcellular permeability study. The data suggests that human nasal epithelial cells In an ALI culture technique shows some promise for a nasal transport and metabolism study.

• Journal of the Society of Naval Architects of Korea
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• v.58 no.4
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• pp.262-270
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• 2021

Consumption of Liquefied Natural Gas (LNG) has increased due to environmental pollution; therefore, the need for LNG carriers can efficiently transport large quantities of LNG, is increased. In various types of LNG Cargo Containment System (CCS), Membrane-type MARK-III composed of composite materials is generally employed in the construction of an LNG carrier. Among composite materials in a Mark-III system, glass-fiber composites act as a secondary barrier to prevent the inner hull structure from leakage of LNG when the primary barrier is damaged. Nevertheless, several cases of damage to the secondary barriers have been reported and if damage occurs, LNG can flow into the inner hull structure, causing a brittle fracture. To prevent those problems, this study conducted the applicability assessment of composite material manufactured by bonding glass-fiber and aluminum with epoxy resin and increasing layer from three-ply (triplex) to five-ply (pentaplex). Tensile tests were performed in five temperature points (25, -20, -70, -120, and -170℃) considering temperature gradient in CCS. Scanning Electron Microscopy (SEM) and Coefficient of Thermal Expansion (CTE) analyses were carried out to evaluate the microstructure and thermos-mechanical properties of the pentaplex. The results showed epoxy resin and increasing layer number contributed to improving the mechanical properties over the whole temperature range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.235-240
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• 2018

We propose a speedy two-step deposit process to form an Au electrode on hole transport layer(HTL) without any damage using a general thermal evaporator in a perovskite solar cell(PSC). An Au electrode with a thickness of 70 nm was prepared with one-step and two-step processes using a general thermal evaporator with a 30 cm source-substrate distance and $6.0{\times}10^{-6}$ torr vacuum. The one-step process deposits the Au film with the desirable thickness through a source power of 60 and 100 W at a time. The two-step process deposits a 7 nm-thick buffer layer with source power of 60, 70, and 80 W, and then deposits the remaining film thickness at higher source power of 80, 90, and 100 W. The photovoltaic properties and microstructure of these PSC devices with a glass/FTO/$TiO_2$/perovskite/HTL/Au electrode were measured by a solar simulator and field emission scanning electron microscope. The one-step process showed a low depo-temperature of $88.5^{\circ}C$ with a long deposition time of 90 minutes at 60 W. It showed a high depo-temperature of $135.4^{\circ}C$ with a short deposition time of 8 minutes at 100 W. All the samples showed an ECE lower than 2.8 % due to damage on the HTL. The two-step process offered an ECE higher than 6.25 % without HTL damage through a deposition temperature lower than $88^{\circ}C$ and a short deposition time within 20 minutes in general. Therefore, the proposed two-step process is favorable to produce an Au electrode layer for the PSC device with a general thermal evaporator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.718-724
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• 2014

In this work, in order to manufacture the photoelectrode of dye-sensitized solar cells, the different anatase $TiO_2$ paste was prepared by simple route using hydrothermal method. In comparison with the traditional preparing process, the hydrothermally synthesized $TiO_2$ gel was used to make paste directly. Thus, the making process was simplified and the solar conversion efficiency was improved. In comparison with 5.34% solar energy efficiency of HP-1 photoelectrode, the 6.23% efficiency of HDP-1 electrode was improved by 16.67%. This is because hydrothermally synthesized $TiO_2$ gel was used to make paste directly, the dispersibility between $TiO_2$ particles was improved and get the smoother network, leading to the charge transport ability of the electron generated in dye molecular was improved. Further, HDP-2 photoelectrode delivered the best results with Voc (open circuit voltage), Jsc (short circuit current density) FF (fill factor) and ${\eta}$(solar conversion efficiency) were 0.695 V, $15.81mA\;cm^{-2}$, 61.48% and 6.80%, respectively. In comparison with 5.34% of HP-1 photoelectrode, it was improved by 27.34%.