• Advances in nano research
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• v.15 no.5
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• pp.467-484
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• 2023

Despite the significant features of fiber-reinforced cementitious composites (FRCCs), including better mechanical, fractural, and durability performance, their high content of cement has restricted their use in the construction industry. Although ground granulated blast furnace slag (GGBFS) is considered the main supplementary cementitious material, its slow pozzolanic reaction stands against its application. The addition of nano-sized mineral modifiers, including nano-silica (NS), is an alternative to address the drawbacks of using GGBFS. The main object of this empirical and numerical research is to examine the effect of NS on the strain-hardening behavior of cementitious composites; ten mixes were designed, and five levels of NS were considered. This study proposes a new method, using a four-point bending test to assess the use of nano-silica (NS) on the flexural behavior, first cracking strength, fracture energy, and micromechanical parameters including interfacial friction bond strength and maximum bridging stress. Digital image correlation (DIC) was used for monitoring the initiation and propagation of the cracks. In addition, to attain a deep comprehension of fiber/matrix interaction, scanning electron microscope (SEM) analysis was used. It was discovered that using nano-silica (NS) in cementitious materials results in an enhancement in the matrix toughness, which prevents multiple cracking and, therefore, strain-hardening. In addition, adding NS enhanced the interfacial transition zone between matrix and fiber, leading to a higher interfacial friction bond strength, which helps multiple cracking in the composite due to the hydrophobic nature of polypropylene (PP) fibers. The findings of this research provide insight into finding the optimum percent of NS in which both ductility and high tensile strength of the composites would be satisfied. As a concluding remark, a new criterion is proposed, showing that the optimum value of nano-silica is 2%. The findings and proposed method of this study can facilitate the design and utilization of green cementitious composites in structures.

• Nuclear Engineering and Technology
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• v.55 no.12
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• pp.4642-4646
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• 2023

The Tb³⁺ or Eu³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor were fabricated by funace at 1500 ℃ for 12 h using a solid state reaction. The XRD (X-ray diffraction_Panalytical X'Pert Pro) and FE-SEM (field emission scanning electron microscope) are measured to confirm the crystalline structure and surface morphology of the phosphor. The Tb³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor emits the lights in 470~650 nm wavelength range due to transitions from ⁵D₄ to ⁷F_j. Therefore, it shows the green region in the CIE chromaticity diagram under both UV and X-rays excitations. The Eu³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor emits the lights in 550~750 nm wavelength range because of ⁵D_i to ⁷F_j. The emission is confirmed to be in the red region using the CIE chromaticity diagram. The Tb³⁺ or Eu³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor shows the characteristic f-f transition with a long decay time, which is about several milliseconds. They have the high efficiency of light emission for X-ray because of their high effective Z number (Z_eff = 58.5) and density. Therefore, they are very much promising phosphors for X-ray imaging application in medical fields.

• Journal of the Korean Wood Science and Technology
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• v.13 no.1
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• pp.3-18
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• 1985

In Korea, a study on the anatomical features of pitch pine (pinus rigida Miller) branch wood through photo-microscopical method was reported in 1972 by Lee. Therefore, as a further study of Lee's on the anatomical features in branch wood of pinus rigida miller that grows in Korea, compression wood, opposite wood, and side wood were selected and treated for the purpose of comparing their structures revealed on cross and radial surface through scanning electron microscope in this study. The obtained results in this study were summarized as follows; 1. The trachied transition from earlywood to late wood is very gradual and the tracheids are nearly regular in both arrangement and size in compression wood but this transition in opposite wood and side wood is abrupt and the tracheids in opposite wood and side wood are less regular than those in compression wood. Also, the annual ring width of opposite wood is narrower than that of compression wood or side wood and the rays revealed on cross surface of side wood are more distinct than compression wood and opposite wood rays. 2. The tracheids of compression wood show roundish trends especially in earlywood but those of opposite wood and side wood show some angular trends. And intercellular space, helical cavity, and spiral check are present in both earlywood and latewood of compression wood but not present in opposite wood and side wood irrespective of earlywood and latewood. 3. The wall thickness of latewood tracheid is similar to that of earlywood tracheid in compression wood whereas the wall thickness of latewood tracheid is by far thicker than that of earlywood tracheid in opposite wood and side wood and the S3 layer of secondary wall is lack in compression wood tracheid unlike opposite wood and side wood tracheid. 4. The tracheids in compression wood are often distorted at their tips unlike those in opposite wood and side wood and the bordered pit in compression wood tracheid is located at the bottom of helical groove unlike that in opposite wood and side wood tracheid. 5. The bordered pits in radial wall of opposite wood and side wood tracheids are oval in shape but those of compression wood tracheids show some modified oval shape. 6. In earlywood of side wood, the small apertures of cross-field pits are roundish triangle to rectangle and the large one are fenestriform through the coalition of two small ones. However, the small apertures of cross-field pits are upright oval and the large ones are procumbent oval shape in earlywood of opposite wood and the apertures of cross-field pits in compression wood are tilted bifacial convex lens shape in earlywood and slit in late wood because of the border on tracheid side.

• Journal of the Korean Applied Science and Technology
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• v.20 no.1
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• pp.33-43
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• 2003

$LiMn_2O_4$ catalyst for $CO_2$ decomposition was synthesized by oxidation method for 30 min at 600$^{\circ}C$ in an electric furnace under air condition using manganese(II) nitrate $(Mn(NO_3)_2{\cdot}6H_2O)$, Lithium nitrate ($LiNO_3$) and Urea $(CO(NH_2)_2)$. The synthesized catalyst was reduced by $H_2$ at various temperatures for 3 hr. The reduction degree of the reduced catalysts were measured using the TGA. And then $CO_2$ decomposition rate was measured using the reduced catalysts. Phase-transitions of the catalysts were observed after $CO_2$ decomposition reaction at an optimal decomposition temperature. As the result of X-ray powder diffraction analysis, the synthesized catalyst was confirmed that the catalyst has the spinel structure, and also confirmed that when it was reduced by $H_2$, the phase of $LiMn_2O_4$ catalyst was transformed into $Li_2MnO_3$ and $Li_{1-2{\delta}}Mn_{2-{\delta}}O_{4-3{\delta}-{\delta}'}$ of tetragonal spinel phase. After $CO_2$ decomposition reaction, it was confirmed that the peak of $LiMn_2O_4$ of spinel phase. The optimal reduction temperature of the catalyst with $H_2$ was confirmed to be 450$^{\circ}C$(maximum weight-increasing ratio 9.47%) in the case of $LiMn_2O_4$ through the TGA analysis. Decomposition rate(%) using the $LiMn_2O_4$ catalyst showed the 67%. The crystal structure of the synthesized $LiMn_2O_4$ observed with a scanning electron microscope(SEM) shows cubic form. After reduction, $LiMn_2O_4$ catalyst became condensed each other to form interface. It was confirmed that after $CO_2$ decomposition, crystal structure of $LiMn_2O_4$ catalyst showed that its particle grew up more than that of reduction. Phase-transition by reduction and $CO_2$ decomposition ; $Li_2MnO_3$ and $Li_{1-2{\delta}}Mn_{2-{\delta}}O_{4-3{\delta}-{\delta}'}$ of tetragonal spinel phase at the first time of $CO_2$ decomposition appear like the same as the above contents. Phase-transition at $2{\sim}5$ time ; $Li_2MnO_3$ and $Li_{1-2{\delta}}Mn_{2-{\delta}}O_{4-3{\delta}-{\delta}'}$ of tetragonal spinel phase by reduction and $LiMn_2O_4$ of spinel phase after $CO_2$ decomposition appear like the same as the first time case. The result of the TGA analysis by catalyst reduction ; The first time, weight of reduced catalyst increased by 9.47%, for 2${\sim}$5 times, weight of reduced catalyst increased by average 2.3% But, in any time, there is little difference in the decomposition ratio of $CO_2$. That is to say, at the first time, it showed 67% in $CO_2$ decomposition rate and after 5 times reaction of $CO_2$ decomposition, it showed 67% nearly the same as the first time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• Applied Chemistry for Engineering
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• v.21 no.1
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• pp.63-70
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• 2010

Transition metal based spent catalysts (Ni-Mo and Co-Mo), which were scrapped from the petrochemical industry, were reused for the removal processes of volatile organic compounds (VOCs). Especially the optimum regeneration procedures were determined using the removal efficiency of VOCs. In this work, the spent Ni-Mo and spent Co-Mo catalysts were pretreated with different physic-chemical treatment procedure: 1) acid aqueous solution, 2) alkali solution, 3) chemical agent and 4) steam. The various characterization methods of spent and its regenerated catalysts were performed using nitrogen adsorption, X-ray diffraction (XRD) and scanning electron microscopy (SEM) equipped with an energy dispersive spectrometry (EDS). It was found that all spent catalysts were found to be potentially applicable catalysts for catalytic oxidation of benzene. The experimental results also indicated that among the employed physico-chemical pretreatment methods, the oxalic acid aqueous (0.1 N, $C_2H_2O_4$) pretreatment appeared to be the most efficient in increasing the catalytic activity, although the catalytic activity of spent Ni-Mo and spent Co-Mo catalysts in the oxidation of benzene were greatly dependent on the pretreatment conditions. The pretreated spent catalysts at optimum condition could be also applied for removing other aromatic compounds (Toluene/Xylene).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.251-252
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• 2012

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

• Polymer(Korea)
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• v.39 no.1
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• pp.88-98
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• 2015

4-Amino-N-hexadecylbenzamide-graphene sheets (AHB-GSs), used in the preparation of the polyimide (PI) nanocomposite films, were synthesized by mixing a dispersion of graphite oxide with a solution of the ammonium salt of AHB. The atomic force microscope image of functionalized-GS on mica and a profile plot revealed the average thickness of AHB-GS to be ~3.21 nm. PI films were synthesized by reacting 4,4'-biphthalic anhydride and bis(4-aminophenyl) sulfide. PI nanocomposite films containing various contents of AHB-GS over the range of 0-10 wt% were synthesized using the solution intercalation method. The PI nanocomposite films under different thermal imidization temperatures, 250 and $350^{\circ}C$, were examined. The graphenes, for the most part, were well dispersed in the polymer matrix despite some agglomeration. However, micrometer-scale particles were not detected. The average thickness of the particles was <10 nm, as revealed from the transmission electron microscope images. Only a small amount of AHB-GS was required to improve the gas barrier, and electrical conductivity. In contrast, the glass transition and initial decomposition temperatures of the PI hybrid films continued to decrease with increasing content of AHB-GS up to 10 wt%. In general, the properties of the PI hybrid films heat treated at $350^{\circ}C$ were better than those of films heat treated at $250^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Applied Chemistry for Engineering
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• v.4 no.3
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• pp.616-626
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• 1993

Polyurethane(PU) have an excellent flexibility and toughness so that it has been widely used as an elastomer. PMMA was blended with PU to improve the impact property. Five types of PU, having different molecular weight and different polyol types, were prepared and blended with PMMA in order to investigate the effect of molecular weight and polyol type of PU on property of PU-PMMA blend. Tensile strength of PU-PMMA blend was determined by Inston. Differential Scanning Calorymetry(DSC) and Scanning. Elctron Microscopy(SEM) were used to observe morphology change and glass transition temperature changes of PU-PMMA blends. Transparency of PU-PMMA blends was determined by haze meter. But, owing to intrinsic incompatability of PU-PMMA, Low impact strength of PMMA wasn't improved through PU-PMMA blend. therefore, polyurethane dimethacrylate(PUD), having similiar chemical structure to PU and two vinyl group at both ends, was prepared and reacted with methyl methacrylate(MMA) to form crosslinked copolymer Mechanical property of this crosslinked polymer, such as impact strength and transparency, was investigated by Instron, Izod type (Cantilever beam) impact tester and haze meter. Results of these measurements showed that crosslinked copolymer of PUD-MMA was better impact resistance than PMMA and maintained similar transparency to PMMA.