• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.553-557
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• 1999

In order to investigate the optical properties of the $Al_XGa_{1-X}N/GaN$ thin film grown by metalorganic chemical vapor deposition (MOCVD) method, the photoluminescene (PL), photocurrent (PC) and persistent photoconductivity (PPC) measurements were carried out at room temperature. The band gap of the $A1_x$$Ga_{1-x}$N/GaN was determined to 3.70 eV by the PL and PC measurements. The PC measurement on the light illumination from the top of the $A1_x$$Ga_{1-x}$N/GaN thin film provides peaks at 3.70, 3.43, and around 2.2 eV. The PC spectrum by the illumination passing through from the substrate of the sample can be shown at 3.43 eV together with a broad tail band from the GaN band edge to around 2.23 eV. The photocurrent quenching and anomalous PPC decay observed in PPC measurements indicate that metastable electron states are fomed in the band gap of GaN layer to trap electrons which can be tunneled the potential barrier for long recovery time.

• Textile Coloration and Finishing
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• v.27 no.1
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• pp.18-26
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• 2015

para-aramid fibers were treated by atmosphere air plasma to improve the interfacial adhesion. The wettability of plasma-treated aramid fiber was observed by means of dynamic contact angle surface free energy measurement. Surface roughness were investigated with the help of scanning electron microscopy and atomic force microscopy. The tensile test of aramid fiber roving was carried out to determine the effect of plasma surface treatments on the mechanical properties of the fibers. A pull-out force test was carried out to observe the interfacial adhesion effect with matrix material. It was found that surface modification and a chemical component ratio of the aramid fibers improved wettability and adhesion characterization. After oxygen plasma, it was indicated that modified the surface roughness of aramid fiber increased mechanical interlocking between the fiber surface and vinylester resin. Consequently the oxygen plasma treatment is able to improve fiber-matrix adhesion through excited functional group and etching effect on fiber surface.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.199-203
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• 2010

Hybridization of semiconductor materials with carbon nanotubes (CNTs) is a recent field of interest in which new nanodevice fabrication and applications are expected. In this work, nanowire type GaAs structures are synthesized on porous single-wall carbon nanotubes (SWCNTs) as templates using the molecular beam epitaxy (MBE) technique. The field emission properties of the as-synthesized products were investigated to suggest their potential applications as cold electron sources, as well. The SWCNT template was synthesized by the arc-discharge method. SWCNT samples were heat-treated at $400^{\circ}C$ under an $N_2/O_2$ atmosphere to remove amorphous carbon. After heat treatment, GaAs was grown on the SWCNT template. The growth conditions of the GaAs in the MBE system were set by changing the growth temperatures from $400^{\circ}C$ to $600^{\circ}C$. The morphology of the GaAs synthesized on the SWCNTs strongly depends on the substrate temperature. Namely, nano-crystalline beads of GaAs are formed on the CNTs under $500^{\circ}C$, while nanowire structures begin to form on the beads above $600^{\circ}C$. The crystal qualities of GaAs and SWCNT were examined by X-ray diffraction and Raman spectra. The field emission properties of the synthesized GaAs nanowires were also investigated and a low turn-on field of $2.0\;V/{\mu}m$ was achieved. But, the turn-on field was increased in the second and third measurements. It is thought that arsenic atoms were evaporated during the measurement of the field emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.14-14
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• 2006

Homoepitaxial growth of GaN on n-type GaN substrates was carried out by hydride vapor phase epitaxy (HVPE) method. This enables us to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch. As a result, the two opposite crystal surfaces have been found to possess low dislocation density. The surface polarity of the homoepitaxially grown GaN was confirmed by both etching of the surface and conversion beam electron diffraction(CBED). The surface morphology and the photoluminescencemeasurement indicated that the surface properties of N-polar face of the homoepitaxlally grown GaN are quite different from the initial N-polar face of the heteroepitaxially grown GaN substrate Also, both surfaces of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD) and photoluminescence measurement.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.36-41
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• 2012

We have been performed on $Co^{60}$ ${\gamma}$-ray irradiation of South Sea cultured pearls, with the absorbed dose of 0.1~100 kGy at room temperature. In addition, it was investigated electron paramagnetic resonance (EPR) and amino acid analysis (AAA) for detection of Gamma irradiated South Sea cultured pearls. It was observed that the irradiated South Sea cultured pearls revealed additional free radical peak such as $CO_2^-$, at a g-factor of $2.001{\pm}0.002$ in EPR spectra. From the amino acid analysis (AAA), it was shown that some of amino acid in the protein of the nacre destroyed after ${\gamma}$-ray; glutamic acid residue by 11.43 %, alanine by 3.11 %, and histidine by 43.75 %. It was useful to detect the irradiated South Sea cultured pearls by EPR measurement in our study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.942-945
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• 2003

Nerve gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas was dimethylmethylphosphonate($C_3H_9O_3P$, DMMP) that is simulant gas of nerve gas. Sensing material was $SnO_2$ added ${\alpha}-Al_2O_3$ with $4{\sim}20wt.%$ and was physically mixed. And then it was deposited by screen printing method on alumina substrate. Sensor device was consisted of sensing electrode with interdigit(IDT) type in front and heater in back side. Total size of device was $7{\times}10{\times}0.6mm^3$. Crystallite size of fabricated $SnO_2$ were characterized by X-ray diffraction(XRD, Rigaku) and morphology of the $SnO_2$ powders was observed by a scanning electron microscope(SEM, Hitachi). Fabricated sensor was measured as flow type and sensor resistance change was monitored real time using LabVIEW program. The best conditions as added $Al_2O_3$ amounts and operating temperature changes were 4wt.% and $300^{\circ}C$ in DMMP 0.5ppm, respectively. The sensitivity was over 75%. Response and recovery times were about 1 and 3 min., respectively. Repetition measurement was very good with ${\pm}3%$ in full scale.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.424-424
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• 2008

Dye-sensitized Solar Cell (DSC) is a new type of solar cell by using photocatalytic properties of $TiO_2$. The electric potential distribution in DSCs has played a major role in the operation of such cells. Models based on a built-in electric field which sets the upper limit for the open circuit voltage(Voc) and/or the possibility of a Schottky barrier at the interface between the mesoporous wide band gap semiconductor and the transparent conducting substrate have been presented. $TiO_2$ thin films were deposited on the FTO substrate by Nd:YAG Pulsed Laser Deposition(PLD) at room temperature and post-deposition annealing at $500^{\circ}C$ in flowing $O_2$ atmosphere for 1 hour. The structural properties of $TiO_2$ thin films have investigated by X-ray diffraction(XRD) and atomic force microscope(AFM). Thickness of $TiO_2$ thin films were controlled deference deposition time and measurement by scanning electron microscope(SEM). Then we manufactured a DSC unit cells and I-V and efficiency were tested using solar simulator.

• Applied Chemistry for Engineering
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• v.3 no.1
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• pp.24-34
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• 1992

Recent studies dealing with the fundamental understanding and applications of bimetallic catalysts are discussed. Bimetallic catalysts have had a major industrial impact, specifically for the reforming of petroleum naphtha, for the hydrogen reduction of carbon monoxide, and for the three way catalytic converter system. The action of the bimetallic catalysts in these reactions may be interpreted in terms of ensembles, electronic influences and surface structure. Various combinations of metal pairs have been considered in order to evaluate the role played by the added metals. For catalyst selectivity control, the possibility of surface enrichment of one element has been recognised. More generally, the influence of preparative variables on the formation of supported catalysts has been clarified, In particular by temperature programmed reduction (TPR). Information on the structure of bimetallic catalysts has been obtained with chemical probes, such as chemisorption and reaction rate measurement and physical probes, such as extended X-ray absorption fine structure (EXAFS), scanning transmission electron microscopy (STEM) and Xe-NMR.

• Journal of the Korean Wood Science and Technology
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• v.33 no.6 s.134
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• pp.17-24
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• 2005

Korean pine (Pinus koraiensis Sieb.et Zucc.) boards of 30 mm thickness were treated by steaming and four different drying methods. Small specimens were taken from the sapwoods of the treated boards and their longitudinal liquid permeability was measured according to Darcy's law. The specimens were also extracted with alcohol and aceton solutions to examine the mechanism of liquid flow in wood. It was observed that specific permeability drastically decreases with measurement time, resulting in violation of Darcy's law. It may be due to that air bubbles formed under vacuum block flow paths in resin canals. The average specific permeabilities of non-extracted and extracted specimens are different from one treatment to another. It is supposed that the properties of residual resin in resin canals change depending on the conditions of treatments. Anatomical examination was conducted with a scanning electron microscope.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.207-210
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• 2014

$TiO_2$ oxide semiconductor is being widely studied in various applications such as photocatalyst and photosensor. Pd/$TiO_2$ gas sensor is mainly used to detect $H_2$, CO and ethanol. This study focus on increasing hydrogen detection ability of Pd/$TiO_2$ in room temperature through Al-doping. Pd/$TiO_2$ was fabricated by the hydrothermal method. Contacting to Aluminum (Al) foil led to Al doping effect in Pd/$TiO_2$ by thermal diffusion and enhanced hydrogen sensing response. $TiO_2$ nanoparticles were sized at ~30 nm of diameter from scanning electron microscope (SEM) and maintained anatase crystal structure after Al doping from X-ray diffraction analysis. Presence of Al in $TiO_2$ was confirmed by X-ray photoelectron spectroscopy at 73 eV. SEM-energy dispersive spectroscopy measurement also confirmed 2 wt% Al in Pd/$TiO_2$ bulk. The gas sensing test was performed with $O_2$, $N_2$ and $H_2$ gas ambient. Pd/Al-doped $TiO_2$ did not response $O_2$ and $N_2$ gas in vacuum except $H_2$. Finally, the normalized resistance ratio ($R_{H2on}/R_{H2off}$) of Pd/Al-doped $TiO_2$ increases about 80% compared to Pd/$TiO_2$.