• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.576-577
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• 2008

ZnS:Cu,Cl blue-green phosphors were prepared by conventional solid state reaction. Copper activator of different concentrations was doped into ZnS structure at two firing steps. The luminescence characteristics dependent on $Cu^{2+}$ doping concentration of the phosphors has been investigated for inorganic electroluminescent device.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1145-1148
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• 2008

The present status and trend of oxide phosphor thin-film development for thin-film electroluminescent (TFEL) device application are presented in this paper. Recently, several newly developed types of bendable or bendable see-through oxide TFEL lamps have been fabricated using the TFEL technology with a newly developed bendable ceramic sheet, glass sheet or sapphire sheet substrate, which has become available on the market. Stable operation at high temperatures was obtained in double-insulating-layer-type TFEL lamps fabricated with a $Zn_2Si_{0.6}Ge_{0.}4O_4$:Mn thin-film emitting layer forming on translucent or transparent bendable sheet substrates.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1410-1412
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• 2005

We present that the electroluminescence (EL) efficiency can be improved by doping an electron transport layer (ETL) with organic materials which can make electron current increase. The electron transport layer of aluminum tris(8 -hydroxyquinoline) (Alq3) is doped with 2-(4-Biphenylyl)-5-(4-tertbutylphenyl)- 1,3,4-oxadiazole) (butyl-PBD) to enhance the electron mobility of the ETL. The higher quantum efficiency of device having ETL using Alq3 doped with butyl-PBD can be attributed to the improved electron and hole balance.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1401-1403
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• 2005

We present that the carrier balance can be improved by doping a hole transport layer of 4,4'- bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (${\alpha}$-NPD) with a hole blocking material of 2,9-dimethyl- 4,7-diphenyl-1,10-phenanthroline (BCP). The doping leads to disturb hole transport, which can enhance the balance of electron s and holes concentration in the emitting layer, aluminum tris(8 -hydroxyquinoline) (Alq3), resulting in enhanced electroluminescence (EL) quantum efficiency for the device with the doped ${\alpha}$-NPD.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.178-180
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• 2003

We performed semiempirical (AMl and ZINDO) and ab initio (HF and DFT) calculations, to investigate molecular structures and optical properties of DCM and its derivatives. DCM and its derivatives are used as a red fluorescent dopant of the organic electroluminescent host materials, $Alq_3$. We have studied the relationship between the molecular structure and the optical properties of these molecules for the improvement of EL efficiencies. Wavelength at the absorption maximum was found to be red-shifted when the molecule is substituted with both strong electron donating and withdrawing functional groups. A new red fluorescent dye was predicted by QSPR study based on calculations and experimental data.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1060-1061
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• 2003

We report photo- (PL), and electroluminescence (EL) realized via intrachain and interchain energy transfer in poly[9,9-(2'-octyl)fluorene-2,7-vinylene]-co-poly[2-methoxy,5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene] (PFV-co-MEH-PPV) copolymer systems. Energy transfer begins even at the device using 5 % MEH-PPV copolymer, and shows the best device performance for the 10 % MEH-PPV copolymer.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1382-1384
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• 1998

Electroluminescence is occurred when phosphor is located in electric field. Object of this research show new type of powder electroluminescent device (PELD) for high brightness compared with conventional PELD. New type of PELD structured as follow ITO/phosphor + dielectric/Silver paste). To investigate optical properties of PELDs, EL spectrum, CIE coordinate system, Brightness of PELDs was measured. The suitable ratio between phosphor and dielectric in new type of PELD was 7:3(phosphor:dielectric). At 200 V 400 Hz, new type of PELD which had ratio of 7:3 was 5700 cd/$m^2$.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.11a
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• pp.242-243
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• 2005

The SrS:Ag, Cl thin films have been grown by the hot wall technique with S furnace placed on the outside of the growth chamber in order to investigate the crystallographic and optical characteristics. The XRD patterns indicate a strongly preferential orientation in the [200] direction. The PL spectrum has an emission peak of about 398nm which is assigned by the transition from $4d^{95}s^1$ to $4d^{10}$ of$Ag^+$ center.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.104-105
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• 2000

1963년 Pope 등에 의해 anthracene 단결정에서 전기 발광(Electroluminescence, EL)이 처음 발견되었지만 실용성의 문제로 크게 각광을 받지는 못했다. 그후로 진공 증착 방법이 고안되고, 1987년 Tang 등에 의해 8-hydroxyquinoline aluminium(Alq$_3$)이라는 색소를 승화시켜 발광층으로 하는 박막 형태의 소자가 개발되면서 유기물로 만들어진 발광다이오드(LED)에 대한 연구가 활발해 졌다. 또한, 1990년 영국의 케임브리지 대학에서 공액고분자인 poly(p-phenylenevinylene)(PPV)를 이용해서 만든 LED가 개발된 이후, 고분자 LED에 대한 연구가 활발히 진행되어오고 있다. $^{(1)}$ (중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.346.2-346.2
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• 2014

To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.