• Journal of the Optical Society of Korea
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• v.1 no.1
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• pp.48-51
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• 1997

A quantum well electroabsorption waveguide modulator utilizing a field-induced refractive index change was designed and fabricated. The on/off ratios of the device were investigated as a function of wavelength over the spectral range of 850 nm to 910 nm for the various reverse biases. The field-induced refractive index variations associated with quantum-confined Stark effect was theoretically obtained based on the measured on/off ratios. The resulting maximum refractive index change(${\DELTA}n) of ~7.5 {\times} 10^{-4}$ at -8 V was estimated.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.156-157
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• 2001

전계 흡수 광 변조기는 우수한 소광비와 낮은 전력 소모로 넓은 대역폭을 확보할 수 있으며 LD와의 단일 집적인 EML(electro-absorption modulator integrated laser diode)의 제작도 용이하므로 Microwave-Photonics 시스템에 매우 적합한 소자로써 근래에 활발한 연구가 진행되어지고 있다. 전계 흡수 광 변조기의 대역폭을 최대한 확보하기 위해서는 진행하는 마이크로파의 위상속도와 광파의 그룹 속도가 정합 되어야 하며 소자의 임피던스가 50Ω에 정합 되어야 한다. (중략)

• ETRI Journal
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• v.28 no.5
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• pp.648-651
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• 2006

In this letter we present a right-angle-bent coplanar waveguide (CPW) which we developed for the application of the driver amplifier-integrated (DAI) 40 Gbps traveling wave electroabsorption modulated laser module. The developed CPW realized parallel progression of the radio frequency (RF) and light using a dielectric overlay structure and wedge bonding on the bending section. The measured $S_{11}$ and $S_{21}$ of the developed CPW were kept below-10 dB up to 35 GHz and -3 dB up to 43 GHz, respectively. These measured results of the CPW were in good agreement with the simulation results and demonstrated the applicability of the CPW to the 40 Gbps communication module.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.9
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• pp.15-22
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• 2000

The effects of carrier transport and input power on the extinction ratio was theoretically analyzed in a 1.55${\mu}m$ InGaAsP/InGaAsP multiple-quantum-well(MQW) electroabsorption(EA) modulator. Poisson's equation, current continuity equations for electrons and holes, and optical field distribution were self-consistently solved by considering electric field dependent absorption coefficients. The field screening effect due to the carrier accumulation in heterointerface and the space-charge region occurred more seriously at the input side of modulator as input optical intensity increased. It was revealed that extinction ratio could be steeply degraded for modulator with the length of 200${\mu}m$ when an input power exceeds 10mW. A degradation of extinction ratio due to the field screening effect would be more significantly at high-performance devices such as a 1.55${\mu}m$DFB-LD/EA-modulator integrated source where optical coupling efficiency is almost complete or a very high-speed modulator with its length as short as a few tens ${\mu}m$.

• ETRI Journal
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• v.35 no.2
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• pp.245-252
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• 2013

In this work, we study the physical layer solutions for 10-gigabit-capable passive optical networks (PONs), particularly for an optical link terminal (OLT) including a 10-Gbit/s electroabsorption modulated laser (EML) and a 2.5-Gbit/s burst mode receiver (BM-Rx) in a novel bidirectional optical subassembly (BOSA). As unique features, a bidirectional mini-flat package and a 9-pin TO package are developed for a 10-gigabit-capable PON OLT BOSA composed of a 1,577-nm EML and a 1,270-nm avalanche photodiode BM-Rx, including a single-chip burst mode integrated circuit that is integrated with a transimpedance and limiting amplifier. In the developed prototype, the 10-Gbit/s transmitter and 2.5-Gbit/s receiver characteristics are evaluated and compared with the physical media dependent (PMD) specifications in ITU-T G.987.2 for XG-PON1. By conducting the 10-Gbit/s downstream and 2.5-Gbit/s upstream transmission experiments, we verify that the developed 10-gigabitcapable PON PMD prototype can operate for extended network coverage of up to a 40-km fiber reach.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.1-8
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• 1990

We made a 12-Laser Diode Array consisting of 12 Graded Index Separate Confinement (GRINSCH) InGaAs/Inp Buried Heterostructure 4 Quantum Well Laser Diodes and examined the potential of controlling lasing operation of each laser diode by the voltage to its electroabsorption region. Using Si V-Groove with 12 V-grooves, a 12-Laser Diode Array, and 12 optical fibers, we investigated the various characteristics of each laser diode by changing the voltage to its electro-absorption region. Finally, we thought over the promising way of implementing optical local area communication between electric circuit boards or between subscribers and a central office using a 12-Laser Diode Array, Si V-groove, and optical fibers.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.3
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• pp.41-48
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• 2002

The bandwidth limitation of traveling-wave electroabsorption modulator(TW-EAM) is determined by the transit time, the velocity-mismatch between optical-wave and microwave, the impedance-matching, the dispersion and the microwave loss. In this paper, we introduce an hovel impulse response of TW-EAM considering transit time as well as velocity-mismatch. We analyze the effect of transit-time and velocity-mismatch at the same time, using the FDTD method. We investigate the modulation bandwidth by changing the depth of the intrinsic region. We suggest that the optimum depth of the intrinsic region is 0.2${\mu}{\textrm}{m}$ when the absorption coefficient($\alpha$) is 0.2${\mu}{\textrm}{m}$-1.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.45-54
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• 2004

Microwave characteristics of ridge type CPW traveling-wave(TW) electroabsorption modulator and photodetector are affected by the thickness of intrinsic layer, width of guiding layer, and the separation of signal and ground electrodes. These factors are determined effective index of microwave and characteristic impedance due to changing of capacitance(C) and inductance(L) of device. However, conventional equivalent circuit of TW-structure is approximated to microstrip and CPW transmission line by distribution of electric and magnetic fields, respectively. In this paper, we analyzed microwave characteristics of TW-structure and found more accurate value of C and L by using finite difference time domain (FDTD) method. These values are adopted circuit element of equivalent circuit. Microwave characteristics obtained by the FDTD and equivalent circuit model show good agreement.