• 한국전기전자재료학회논문지
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• 제32권4호
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• pp.302-306
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• 2019

We investigated a solution-derived $Y_2O_3$ film treated by ion beam (IB) irradiation as a liquid crystal (LC) alignment layer. With IB irradiation, homogeneous LC alignment was achieved irrespective of the annealing temperature. To verify the effect of IB irradiation, we conducted surface analyses such as X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). As $Y_2O_3$ is a high-k material, the electro-optical properties of the twisted nematic (TN) cells were superior to those of conventional TN cells based on a rubbed polymer, with an LC rising time of 4.1ms and falling time of 2.9ms. The IB-irradiated $Y_2O_3$ is a good alternative as an alignment layer for fast-switching TN LC displays.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2004년도 제5회 압연심포지엄 신 시장 개척을 위한 압연기술
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• pp.285-293
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• 2004

Oxidation behavior of 304 and 430 stainless steel were studied using thin film X-ray analysis and glow discharge spectrum analysis (here-after GDS). The oxidation layer of 304 stainless steel was composed of $Cr_2O_3\;and\;FeCrO_4$ and its thickness was about $1.5{\mu}m$ after $1\~5$ minutes of annealing at $1120^{\circ}C$ open air. However, the oxidation layer of 430 stainless steels was mainly composed of $Cr_2O_3$ and its typical thickness was 0.5um after $1\~5$ minutes of annealing at $1000^{\circ}C$ open air. Electro-chemical analysis revealed that the descaling of oxidation layer could be activated by Fe, Cr dissolution from the matrix behind the oxidation layer at the current density of $5\~10ASD$ and by Fe, Cr-oxide dissolution from the oxidation layer at the current density over than 10ASD. Electrolytic stripping of 430 and 304 revealed the intial incubation period of descaling by oxygen evolving at low current density range such as $5\~10ASD$. However the dissolution of oxide layer was occurred when applying the anodic current of $10\~20ASD$ on 430 and 304 stainless steels. It was suggested that the electrolytic pickling of high Cr bearing stainless steel such as 430 and 304 seemed to be the more effective in the high current density range such as $10\~20ASD$ than the low current density range such as $5\~10ASD$.

• 한국재료학회지
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• 제30권10호
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• pp.558-565
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• 2020

AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al³⁺ ions of relatively small ion radius are substituted for Zn²⁺ ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al_2p and O_ll increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 10¹⁹ cm^-3 of carrier concentration, 8.4 cm^-2/V·s of mobility and 1.2 × 10^-2 Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.314-314
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• 2012

The dilute magnetic semiconductors (DMS) have been developed to multi-functional electro-magnetic devices. Specially, the Si based DMS formed by ion implantation have strong advantages to improve magnetic properties because of the controllable effects of carrier concentration on ferromagnetism. In this study, we investigated the deep level states of Fe- and Co-ions implanted Si wafer during rapid thermal annealing (RTA) process. The p-type Si (100) wafers with hole concentration of $1{\times}10^{16}cm^{-3}$ were uniformly implanted by Fe and Co ions at a dose of $1{\times}10^{16}cm^{-2}$ with an energy of 60 keV. After RTA process at temperature ranges of $500{\sim}900^{\circ}C$ for 5 min in nitrogen ambient, the Au electrodes with thickness of 100 nm were deposited to fabricate a Schottky contact by thermal evaporator. The surface morphology, the crystal structure, and the defect state for Fe- and Co- ion implanted p-type Si wafers were investigated by an atomic force microscopy, a x-ray diffraction, and a deep level transient spectroscopy, respectively. Finally, we will discuss the physical relationship between the electrical properties and the variation of defect states for Fe- and Co-ions implanted Si wafer after RTA.

• 한국통신학회논문지
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• 제17권2호
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• pp.142-152
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• 1992

본 논문에서는 광파이버 센서로써 고전계(고전압)측정의 어려움을 해결하기 위하여 지금까지 알려진 다른 전기광학 소자보다 반파장 전압이 매우 높은 SiO2를 사용하여 고전계을 계측하기 위한 새로운 방법을 제시 하였다. SiO2를 비롯한 광학소자로 구성된 센서내부, 즉 전광자 및 편광자에서의 광변조식을 Stokes Parameter와 Mueller 행렬로 유도 하였고 이를 복굴절 결정에서의 전기광학 효과를 이론적으로 해석하고 위상지연과 반파장 전압을 계산하였다. 설계 제작한 광전압 센서에 , 분압없이 최대전압 20KV까지 공급 했을때의 출력신호를 검출한 결과 오차는 3%미만으로서 매우 우수한 직선성을 얻었다. SiO2의 온도변화(-20~60$^{\circ}$C)에 따른 출력전압 변화를 실험한 결과 최대 7.5%까지 변동율이 발생하였으나 열처리 한후로는 1.0% 이내로 개선된 특성을 보였다.

• 한국정보전자통신기술학회논문지
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• 제17권3호
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• pp.155-165
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• 2024

환원된 산화 그래핀(rGO)을 알루미늄, 티타늄, 스트론튬이 혼합된 졸-겔 용액에 혼합하여 브러시 코팅법을 이용하여 액정배향용 하이브리드 박막을 제조하였다. 160, 260, 및 360℃에서 어닐링한 후 산화 반응의 차이를 관찰하였다. 박막 제조 과정에서 생성된 졸-겔 용액은 브러시 모의 전단 응력에 의해 수축력을 발생시켜 미세홈 구조를 형성하였다. 이러한 구조는 주사 전자 현미경 분석을 통해 확인되었으며, rGO의 존재가 명확하게 보였다. 어닐링 온도가 증가함에 따라서 박막 표면의 산화 및 환원 반응이 더욱 활성화되어 표면 혼합물의 강도가 증가하였다. 또한 혼합물의 강도를 증가시킴으로써 전기광학적 특성이 안정화되고 개선되었다. 더불어 전압-정전용량 값도 크게 향상되었다. 최종적으로 투과율 측정 결과 액정디스플레이의 액정 배향막으로 적용하기에 적합한 것으로 나타났다.

• Current Photovoltaic Research
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• 제4권1호
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• pp.16-20
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• 2016

$Cu_2ZnSnS_4$ (CZTS) thin films were fabricated by successive electrodeposition of layers of precursor elements followed by sulfurization of an electrodeposited Cu-Zn-Sn precursor. In order to improve quality of the CZTS films, we tried to optimize the deposition condition of absorber layers. In particular, I have conducted optimization experiments by changing the Cu-layer deposition time. The CZTS absorber layers were synthesized by different Cu-layer conditions ranging from 10 to 16 minutes. The sulfurization of Cu/Sn/Zn stacked metallic precursor thin films has been conducted in a graphite box using rapid thermal annealing (RTA). The structural, morphological, compositional, and optical properties of CZTS thin films were investigated using X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and X-ray Flourescenece Spectrometry (XRF). Especially, the CZTS TFSCs exhibits the best power conversion efficiency of 4.62% with $V_{oc}$ of 570 mV, $J_{sc}$ of $18.15mA/cm^2$ and FF of 45%. As the time of deposition of the Cu-layer to increasing, the properties were confirmed to be systematically changed. And we have been discussed in detail below.

• 센서학회지
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• 제1권1호
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• pp.53-57
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• 1992

본 연구는 $CdS_{1-x}Se_{x}$의 박막을 제작하고 그 전기-광학적인 특성을 조사한 것이다. 전자선 가열증착법을 이용하여 $CdS_{1-x}Se_{x}$을 알루미나 기판위에 $1.5{\times}10^{-7}$ torr의 압력, 4kV의 전압, 2.5 mA의 전류 그리고 기판온도를 $300^{\circ}C$로 유지하여 증착하였다. 증착된 $CdS_{1-x}Se_{x}$ 박막은 X-ray 회절 실험을 통하여 볼 때, 육방정계의 결정구조를 가지며 성장되었다. $CdS_{1-x}Se_{x}$ 도전막은 특정분위기에서 $550^{\circ}C$, 30분간 열처리함으로써 높은 광전도성을 나타내게 되었다. 또한 Hall 효과, 광전류 스펙트럼, 감도, 최대 허용 전력과 응답시간 등을 조사하였다.

• 한국분말재료학회지
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• 제13권1호
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• pp.18-24
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• 2006

The brazing adhesion properties of Ag coated W-Ag electric contact on the Cu substrate have been investigated in therms of microstructure, phase equilibrium and adhesion strength. Precoating of Ag layer ($3{\mu}m$ in thickness) on the $W-40\%Ag$ contact material was done by electro-plating method. Subsequently the brazing treatment was conducted by inserting BCuP-5 filler metal (Ag-Cu-P alloy) layer between Ag coated W-Ag and Cu substrate and annealing at $710^{\circ}C$ in $H_2$ atmosphere. The optimum brazing temperature of $710^{\circ}C$ was semi-empirically calculated on the basis of the Cu atomic diffusion profile in Ag layer of commercial electric contact produced by the same brazing process. As a mechanical test of the electric contact after brazing treatment the adhesion strength between the electric contact and Cu substrate was measured using Instron. The microstructure and phase equilibrium study revealed that the sound interlayer structure was formed by relatively low brazing treatment at $710^{\circ}C$. Thin Ag electro-plated layer precoated on the electric contact ($3{\mu}m$ in thickness) is thought to be enough for high adhesion strength arid sound microstructure in interface layer.

• 한국자기학회지
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• 제18권1호
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• pp.43-47
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• 2008

[ $ZnO-Bi_2O_3-Al_2O_3-B_2O_3-SiO_2$ ] nano-glass를 sol-gel 법으로 제조 하였다. 평균 입자 크기는 60.3 nm였으며 매우 균일한 입도 분포를 가졌다. Nano-glass를 NiZnCu ferrite의 저온소성용 소결조제로 사용하였으며 NiZnCu ferrite에 nano-glass를 첨가한 후 $840{\sim}900^{\circ}C$에서 2시간 소결을 진행하였다. 소결성 및 자기적 특성에 대해 연구하였으며 밀도, 수축율, 초투자율, 품질계수, 및 포 화자화값을 측정하였다. nano-glass를 0.5 wt% 첨가하여 $900^{\circ}C$에서 소결한 토로이달 core 시편의 초투자율은 1 MHz에서 측정 시 193.3의 값을 가졌다. 초투자율과 포화자화값은 소결온도가 증가함에 따라 증가하는 경향을 나타내었다. sol-gel 법에 의해 제조된 $ZnO-Bi_2O_3-Al_2O_3-B_2O_3-SiO_2$ nano-glass를 칩인덕터용 NiZnCu ferrite의 저온 소결조제로 사용 가능함을 알 수 있었다.