• 지구물리와물리탐사
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• 제10권1호
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• pp.50-59
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• 2007

물위나 육지에서 끄는 방식의 전기비저항 배열법의 등장은 그 자료량의 규모를 항공전자탐사의 규모에 가깝게 만들었으며, 이렇게 얻어진 자료들의 대부분은 해석을 위한 1 차원 역산이 시도되었다. 이 자료들의 믿을만한 해석과 자료처리를 실행 가능화시키기 위해서는 강력하고 완벽한 자동화 공정은 필수 불가결한 요소이다. 하상이나 염수 대수층의 상부와 같은 뾰족한 경계를 찾아내야 하므로 평활화제한법의 이용은 최소화 시켜야 한다. 적절한 역산 방식이라면 신호를 감쇠시키는 전도성 기반암의 경우에는 해석의 오류를 피하기 위해 낮은 신호대 잡음비를 현명하게 다룰 수 있어야 한다. 이를 위해 각각의 전극 배열법에 대해 하나의 탄력적 두께를 갖는 층을 운용하는 잡음 인지 역산 방법이 코딩되었다. 잡음 인지 역산법은 만약 전도성 기반암이 선호를 감쇠시켜 잡음 수준보다 작게 만들면 이를 감지하여 적당한 위치에 전도성 기반암을 갖는 모형을 구성해 준다. 초기모형의 층들은 4 극으로 구성된 각 전기 배열법의 유효깊이가 미치는 범위 내에서 제 위치를 찾아가게 된다. 이 알고리듬은 4 극의 유효깊이가 대략 지수함수적인 배열을 이루어 자료가 얻어졌을 때 가장 최상의 결과를 나타낸다. 접지저항을 줄이기 위한 선전극이나 용량선 안테나(capacitive-antenna)에 의한 자료의 역산도 가능하다. 이 논문은 이론자료와 오스트레일리아의 Murray 강의 염분차단 계획의 예를 들어 개발된 알고리듬의 유용성을 보여주었다.

• 한국지하수토양환경학회지:지하수토양환경
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• 제7권3호
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• pp.3-17
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• 2002

본 연구는 부산시 동남해안 지역에서 해수침입의 지역적 특성과 해수침입의 범위를 파악하기 위하여 지하수 모니터링공의 자료분석과 지구통계학적 기법을 이용하였다. 강수에 의한 직접적인 지하수의 충진으로 모니터링 우물에서의 지하수위는 강수량과 비례하지만 전기전도도는 강수량과 대체로 반비례하는 것으로 나타났다. 모니터링 우물에서 전기전도도는 약 24m심도에서 급격히 증가되어 26m전후에서 20,000$\mu\textrm{s}$/cm를 초과하였고, 지하수위와 전기전도도를 비교한 결과, 지하수위가 낮아질수록 해수와 담수의 경계면이 상승하는 경향을 보인다. 교차상관성 분석에 의하면 지하수위와 강수량은 시차가 0일 때 교차상관 계수가 최대이지만, 전기전도도와 강수량의 교차상관계수는 시차가 9일 때 최대로 나타났다. 이것은 지하수위 변동이 강수에 의하여 단시간에 영향을 받고 있으나, 해수와 담수의 경계면은 강수에 의하여 매우 느리게 반응한다는 것을 나타낸다. 2개의 측선에서 실시된 수평전기탐사 자료의 역산결과, Line 1에서는 동쪽 끝에서 내륙으로 약 14m지점까지, Line 2에서는 동남쪽 끝에서 내륙으로 약 25m지점까지 해수가 침투한 것으로 나타났다 5월과 7월에 슬럼버져 배열의 수직전기탐사를 실시하여 획득한 자료는 각각 대수정규분포를 나타내었고, 크리깅에 의한 겉보기비저항 분포도와 전기비저항 분포도를 비교하면 5월보다 7월에 비저항치가 상승한 것으로 나타났다. 이것은 6, 7월에 내린 강수로 지하수의 함양량이 증가하여 대수층내 해수의 농도가 감소하였기 때문이다 겉보기비저항의 수직단면도 및 평면도 그리고 전기비저항 분포도를 분석한 결과. 지구통계학적 기법은 해안 지역에서의 전기비저항 분포 변화를 파악하는데 매우 유용하였다.

• 한국석유지질학회지
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• 제2권2호
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• pp.43-50
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• 1994

경기육괴와 옥천대의 경계부분에 위치한 백악기 퇴적분지인 공주분지의 조구조운동의 특성과 지하구조를 해석하기 위하여 분지를 가로지르는 측선을 2개 설정하여 중력탐사를 실시하고, 분지의 경계를 이루는 두 단층선에 대하여 파쇄대의 발달상태를 확인하기 위하여 쌍극자 비저항탐사를 실시하였다. 부우게이상을 구하기 위한 중력자료의 처리과정에서 원추형프리즘 모형을 이용하여 지형보정값을 계산함으로써 경사가 급한 지역에서의 보정의 효과를 향상시켰다. 중력자료의 정량적해석을 위하여 역산 및 순산모델링 (forward modeling)을 실시하였으며, 전기탐사자료를 처리하여 비저항단면도를 얻었다. 중력모델링 결과, 공주분지는 중앙부의 폭이 약 $4{\cal}km$, 남동부의 폭이 약 $2.5{\cal}km$로 지표에서 보이는 바와 같은 마름모형태로 나타났다. 분지의 깊이는 약 $700{\~}400{\cal}m$로 중앙부의 기반이 솟아오른 형태를 보이는데, 이것은 분지가 형성된 후 압축응력이 작용한 결과로 해석된다. 또한 분지내부에서 형성된 저밀도의 파쇄대가 나타나는데, 이는 분지의 생성과정이나 퇴적물이 쌓인 후에 몇차례의 단층운동이 있었음을 시사한다. 분지를 형성한 주단층 가운데, 남동경계를 이루는 단층의 파쇄대는 넓게 분포하고 지하 $1{\cal}km$ 이상의 깊이까지 연장되어 있는 것으로 나타나는 반면 북서경계의 파쇄대는 비교적 미약하게 나타났다. 이로부터 분지의 남동경계를 이루는 단층을 따라 진행된 조구조운동의 강도가 상대적으로 컸을 것으로 추측할 수 있다. 이러한 양상은 남동경계를 이루는 단층대에서 저비저항대가 두텁게 나타난 전기탐사의 결과와 잘 일치한다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.23.1-23.1
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• 2009

ZnO is of great interest for various technological applications ranging from optoelectronics to chemical sensors because of its superior emission, electronic, and chemical properties. In addition, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. To date, several approaches have been proposed for the growth of one-dimensional (1D) ZnO nanostructunres. Several groups have been reported the MOCVD growth of ZnO nanorods with no metal catalysts at $400^{\circ}C$, and fabricated a well-aligned ZnO nanorod array on a PLD prepared ZnO film by using a catalyst-free method. It has been suggested that the synthesis of ZnO nanowires using a template-less/surfactant-free aqueous method. However, despite being a well-established and cost-effective method of thin film deposition, the use of magnetrons puttering to grow ZnO nanorods has not been reported yet. Additionally,magnetron sputtering has the dvantage of producing highly oriented ZnO film sat a relatively low process temperature. Currently, more effort has been concentrated on the synthesis of 1D ZnO nanostructures doped with various metal elements (Al, In, Ga, etc.) to obtain nanostructures with high quality,improved emission properties, and high conductance in functional oxide semiconductors. Among these dopants, Ga-doped ZnO has demonstrated substantial advantages over Al-doped ZnO, including greater resistant to oxidation. Since the covalent bond length of Ga-O ($1.92\;{\AA}$) is nearly equal to that of Zn-O ($1.97\;{\AA}$), high electron mobility and low electrical resistivity are also expected in the Ga-doped ZnO. In this article, we report the successful growth of Ga-doped ZnO nanorods on c-Sapphire substrate without metal catalysts by magnetrons puttering and our investigations of their structural, optical, and field emission properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.241-241
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• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1992년도 춘계학술대회
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• pp.27-47
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• 1992

Engineers have developed new instruments that aid in diagnosis and therapy Ultrasonic imaging has provided a nondamaging method of imaging internal organs. A complex transducer emits ultrasonic waves at many angles and reconstructs a map of internal anatomy and also velocities of blood in vessels. Fast computed tomography permits reconstruction of the 3-dimensional anatomy and perfusion of the heart at 20-Hz rates. Positron emission tomography uses certain isotopes that produce positrons that react with electrons to simultaneously emit two gamma rays in opposite directions. It locates the region of origin by using a ring of discrete scintillation detectors, each in electronic coincidence with an opposing detector. In magnetic resonance imaging, the patient is placed in a very strong magnetic field. The precessing of the hydrogen atoms is perturbed by an interrogating field to yield two-dimensional images of soft tissue having exceptional clarity. As an alternative to radiology image processing, film archiving, and retrieval, picture archiving and communication systems (PACS) are being implemented. Images from computed radiography, magnetic resonance imaging (MRI), nuclear medicine, and ultrasound are digitized, transmitted, and stored in computers for retrieval at distributed work stations. In electrical impedance tomography, electrodes are placed around the thorax. 50-kHz current is injected between two electrodes and voltages are measured on all other electrodes. A computer processes the data to yield an image of the resistivity of a 2-dimensional slice of the thorax. During fetal monitoring, a corkscrew electrode is screwed into the fetal scalp to measure the fetal electrocardiogram. Correlations with uterine contractions yield information on the status of the fetus during delivery To measure cardiac output by thermodilution, cold saline is injected into the right atrium. A thermistor in the right pulmonary artery yields temperature measurements, from which we can calculate cardiac output. In impedance cardiography, we measure the changes in electrical impedance as the heart ejects blood into the arteries. Motion artifacts are large, so signal averaging is useful during monitoring. An intraarterial blood gas monitoring system permits monitoring in real time. Light is sent down optical fibers inserted into the radial artery, where it is absorbed by dyes, which reemit the light at a different wavelength. The emitted light travels up optical fibers where an external instrument determines O2, CO2, and pH. Therapeutic devices include the electrosurgical unit. A high-frequency electric arc is drawn between the knife and the tissue. The arc cuts and the heat coagulates, thus preventing blood loss. Hyperthermia has demonstrated antitumor effects in patients in whom all conventional modes of therapy have failed. Methods of raising tumor temperature include focused ultrasound, radio-frequency power through needles, or microwaves. When the heart stops pumping, we use the defibrillator to restore normal pumping. A brief, high-current pulse through the heart synchronizes all cardiac fibers to restore normal rhythm. When the cardiac rhythm is too slow, we implant the cardiac pacemaker. An electrode within the heart stimulates the cardiac muscle to contract at the normal rate. When the cardiac valves are narrowed or leak, we implant an artificial valve. Silicone rubber and Teflon are used for biocompatibility. Artificial hearts powered by pneumatic hoses have been implanted in humans. However, the quality of life gradually degrades, and death ensues. When kidney stones develop, lithotripsy is used. A spark creates a pressure wave, which is focused on the stone and fragments it. The pieces pass out normally. When kidneys fail, the blood is cleansed during hemodialysis. Urea passes through a porous membrane to a dialysate bath to lower its concentration in the blood. The blind are able to read by scanning the Optacon with their fingertips. A camera scans letters and converts them to an array of vibrating pins. The deaf are able to hear using a cochlear implant. A microphone detects sound and divides it into frequency bands. 22 electrodes within the cochlea stimulate the acoustic the acoustic nerve to provide sound patterns. For those who have lost muscle function in the limbs, researchers are implanting electrodes to stimulate the muscle. Sensors in the legs and arms feed back signals to a computer that coordinates the stimulators to provide limb motion. For those with high spinal cord injury, a puff and sip switch can control a computer and permit the disabled person operate the computer and communicate with the outside world.