• Journal of the Korean Solar Energy Society
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• v.29 no.4
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• pp.1-6
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• 2009

This paper estimates numerically cells the electrical characteristics of the PV module with environmental changes such as shunt resistance, series resistance, temperature, irradiance. Series resistance $R_s$ including diode characteristic resistance $r_d$ is derived from the p-n junction diode model. I-V characteristics of this model with series resistance $R_s$ are simulated on Matlab. Finally, theoretical I-V characteristics are compared with those of solar simulator. Those results agreed well within the manufacturer's maximum error range 3%

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.11
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• pp.901-905
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• 2010

PV module has many power loss factors, and series resistance is the most important elements of them. It is therefore easy to expect the partial shading decrease the lifetime of the semiconductor depletion layer in thin film PV module. Different shading losses could be related with the hot spot which is critical in expecting the reliability issue. In this paper we have modelled the series resistance of the PV module with both different direction of the cell line and shading area of the panel. From the results, thin film a-Si PV module has shown different properties by shading direction.

• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.98-103
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• 2009

In this paper, we test the electrical resistance of flat wire in the PV module. normally solar cell has two kind of flat wire(inter connection ribbon and bus bar ribbon). we found the phenomenon that has a unbalance with resistance when we make a wiling between of string. So, we measurement the resistance of flat wire each other. and analysis of missmatch with resistance between flat wires on PV module. next to survey of IR picture on missmatch flat wire samples for analyze of missmatch with current in the wire. and we perform IR test with solar cell that has a connection with flat wire for test the effect of missmatch resistance on solar cell. Finally we perform the Dark I-V test for survey of effect by the unbalance of resistance. By the result of Dark I-V test, the series resistance of existing connection sample is large more then innovated connection sample.

• Geomechanics and Engineering
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• v.39 no.1
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• pp.105-113
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• 2024

Recently, electrical resistivity surveys have been used to obtain information related to underground structures including burial structure type and depth. However, various field conditions hinder understanding measured electrical resistance, and thus there is a need to understand how various geometries affect electrical resistance. This study explores the effect of geometric parameters of a structure and electrodes on electrical resistance in the framework of the finite element method. First, an electrical resistance module is developed using the generalized mesh modeling technique, and the accuracy of the module is verified by comparing the results with the analytical solution for a cylindrical electrode with conical tip. Then, 387 cases of numerical analysis including geometric parameters of a buried structure and electrodes are conducted to quantitatively estimate the detection depth under a steady-state current condition. The results show that electrical resistance is increased as (1) shallower burial depth of structure, (2) closer distance between ground electrode and structure, (3) longer horizontal electrode distance. In addition, the maximum detection depth corresponding to converged electrical resistance is deeper as (4) closer distance between ground electrode and structure, (5) shorter horizontal electrode distance. The distribution of the electric potential around the electrodes and underground structure is analyzed to provide a better understanding of the measured electrical resistance. As engineering purpose, the empirical equation is proposed to calculate maximum detection depth as first approximation.

• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.115-120
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• 2009

In this paper, we measurement the resistance on the flat wire for PV module. There is some kind of flat wire that has different length and different contact area in the PV module. so we test the resistance on each case for analysis with common connection method. we measurement the electrical output characteristics and phenomenon of PV module that is applied new connetion method. by the result, The fill factor and electrical output characteristics on PV module are analyzed to getting better more then common connection method. Finally we recommend the developed connection method for diminishing of resistance on PV module. It enhance the electrical character more than common connection method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.340-344
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• 2012

Protected Circuit Module protects battery from over-charge and over-discharge, also prevents accidental explosion. Therefore, power MOSFET is essential to operate as a switch within the module. To reduce power loss of MOSFET, the on state voltage drop should be lowered and the switching time should be shorted. However there is trade-off between the breakdown voltage and the on state voltage drop. The TDMOS can reduce the on state voltage drop. In this paper, effect of design parameter variation on electrical properties of TDMOS, were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get 65% higher breakdown voltage and 17.4% on resistance enhancement.

• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.104-109
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• 2009

If the Photovoltaic(PV) Module should get physical load, the PV module will be warped according to elongation of the front glass and then micro-crack will be occurred in the heat sealed Solar Cell. This micro-crack drops output of the short circuit current and the open circuit voltage of the PV Module. This is because of increase of resistance component by micro-crack. Micro-crack at specific Solar Cell in the module reduces the durability of PV Module such as less output, Hot-Spot in the PV module caused by Solar Cell output mismatch, heat generating as resistance component caused by micro-crack. In this study, among some factors which effect to the output of crystalline PV Module, we will see how the micro-crack caused by mechanical stress effects to the electrical output of PV Module.

• New & Renewable Energy
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• v.6 no.1
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• pp.38-45
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• 2010

Abstract Under the physical stress on photovoltaic (PV) module, it will be warped according to elongation of the front glass and then micro-crack will be occurred in the thermally sealed solar cell. This micro-crack leads to drop of short circuit current of the PV module. This is because of increase of resistance component by micro-crack. Micro-crack at specific solar cell in the module lessens the durability of PV module with reduced output, hot-spot caused by solar cell output mismatch and increased resistance component. This study shows the relation between electrical characteristics and micro- cracks due to mechanical stress on PV module.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.3-4
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• 2008

Photovoltaic module consists of serially connected solar cell which has low voltage characteristics. But, the other way, the whole current flow of PV module is restricted by lowest current of one solar cell. For the experiment, we make PV module composing the solar cells that have short circuit current difference of 0%, 1%, 3% and 5%. Using Light I-V and Dark I-V measurements, electrical characteristic parameters like Isc(short-circuit current), Voc(open-circuit voltage), Rs(series resistance), Rsh(shunt resistance) are analyzed. PV module of low current characteristics has electrical stress from other modules. And, such a module has a tendency of hot-spot suffering which leads degradation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.6
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• pp.614-618
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• 2024

MBB (multi-busbar) technology is a module technology to achieve high power, and the use of a number of thin circular metal wires increases light-receiving capacity and reduces resistance. In the process of interconnection using a wire, the stress of the cell increases depending on the degree of coupling between the wire and the cell and the degree of damage caused by heat, or the mobility of current decreases due to poor bonding. The degree of such loss is affected by IR lamp, hot plate temperature and wire thickness. In addition, the values of contact resistance were compared and analyzed to analyze the cause of the decrease in electrical characteristics. In this study, process condition optimization was carried out through peeling test, SEM analysis, EL test, and pre/post bonding efficiency characteristic analysis of the bonded cell according to process conditions, compared the contact resistance.