• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.57-58
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• 2008

PTC thermistor are characterized by an increase in the electrical resistance with temperature. The PTC materials of middle Curie point were produced or that of high Curie point (above $200^{\circ}C$), it was determined that compositional modifications of $Pb^{2+}$ for $Ba^{2+}$ produce change sin the Curie point to higher temperature. PTC ceramic materials with the Curie point above $120^{\circ}C$ were prepared by adding $PbTiO_3$, PbO or $Pb_3O_4$ into $BaTiO_3$. Thereby, adding $Pb^{2+}$ into $BaTiO_3$-based PTC material to improve Tc was studied broadly, however, weal know that PbO was poisonous and prone to volatilize, then to pollute the circumstance and hurt to people, so we should dope other innocuous additives instead of lead to increase Tc of composite PTC material. In order to prepare lead-free $BaTiO_3$-based PTC with middle Curie point, the incorporation on $Bi_{1/2}Na_{1/2}TiO_3$ into $BaTiO_3$-based ceramics was investigated on samples containing 0, 1, 2, 3, 4, and 50mol% of $Bi_{1/2}Na_{1/2}TiO_3$. $Bi_{1/2}Na_{1/2}TiO_3$ was compounded as standby material by conventional solid-state reaction technique. The starting materials were $Bi_{1/2}Na_{1/2}TiO_3$, $BaCO_3$, $TiO_2$ and $Y_2O_3$ powder, and using solid-state reaction method, too. The microstructures of samples were investigated by SEM, DSC, XRD and dielectric properties. Phase composition and lattice parameters were investigated by X-ray diffraction.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.499-499
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• 2011

Silicon nanowires (Si NWs) have been extensively studied for nanoelectronics owing to their unique optical and electrical properties different from those of bulk silicon. For the development of Si NW devices, better understanding of oxidation behavior in Si NWs would be an important issue. For example, it is widely known that atomic scale roughness at the dielectric (SiOx)/channel (Si) interface can significantly affect the device performance in the nano-scale devices. However, the oxidation process at the atomic-scale is still unknown because of its complexity. In the present work, we investigated the oxidation behavior of Si NW in atomic scale by simulating the dry oxidation process using a reactive molecular dynamics simulation technique. We focused on the residual stress evolution during oxidation to understand the stress effect on oxidation behavior of Si NWs having two different diameters, 5 nm and 10 nm. We calculated the charge distribution according to the oxidation time for 5 and 10 nm Si NWs. Judging from this data, it was observed that the surface oxide layer started to form before it is fully oxidized, i.e., the active diffusion of oxygen in the surface oxide layer. However, it is well-known that the oxide layer formation on the Si NWs results in a compressive stress on the surface which may retard the oxygen diffusion. We focused on the stress evolution of Si NWs during the oxidation process. Since the surface oxidation results in the volume expansion of the outer shell, it shows a compressive stress along the oxide layer. Interestingly, the stress for the 10 nm Si NW exhibits larger compressive stress than that of 5 nm Si NW. The difference of stress level between 5 an 10 anm Si NWs is approximately 1 or 2 GPa. Consequently, the diameter of Si NWs could be a significant factor to determine the self-limiting oxidation behavior of Si NWs when the diameter was very small.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.286-291
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• 1998

$SrTiO_3$[ST] thin films were fabricated on $RuO_2$bottom electrodes by RF magnetron sputtering with various $Ar/O_2$ratio in sputtering gas. As the content of oxygen increases, the leakage current of ST films measured at $10^5$ V/cm decreases from $2.0{\times}10^{-6}A/{\textrm}{cm}^2(Ar/O_2=10/0)$ to $3.8{\times}10^{-7}A/{\textrm}cm^2(Ar/O_2=5/5)$, and the dielectric constant of ST films increases from $70(Ar/O_2=10/0)$ to $190(Ar/O_2=5/5)$. The improvement of electrical properties of ST films is mainly due to the structural modification of ST films such as better crystallinity, smooth surface morphology with the increase of oxygen content in the sputtering gas.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.367-371
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• 2001

In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

• The Korean Journal of Rheology
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• v.10 no.4
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• pp.195-201
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• 1998

We have studied the rheological and electrical properties of two types of electrorheological (ER) fluids based on semi-conductive polymers (poly(p-phenylene) and polyaniline). These semi-conductive polymer-based suspensions showed a dramatic increase in viscosity on the application of the static electric field due to the large value of conductivity ratio between particle and medium. The dynamic yield stresses of these ER suspensions exhibited a quadratic dependence on electric field strength at low electric fields and a linear one for high fields. They showed a maximum and then decreased with increasing bulk conductivity of particles. These yield stress behaviors under the static electric field were found to be closely related to the dielectric properties, which is in accord with Maxwell-Wagner interfacial polarization induced by the conductivity effects. In order to achieve better understanding of interfacial polarization effect on ER response and to improve the stability of ER suspension, different kinds of surfactants were employed for controlling the ER activity as well as for enhancing the colloidal stability of suspensions.

• Applied Chemistry for Engineering
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• v.27 no.5
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• pp.495-501
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• 2016

Mineral oil has been widely used as an insulating oil for electrical transformers for a long time, but the necessity of employing new insulation oil such as vegetable oil has been increased due to urgent needs for the biodegradability when it leaks and also for the thermal stability at a higher operation temperature. Although specific periods are required between the production and consumption, there are still short of the data to prove the insulation oils' storage stability depending upon various circumstances and their resources. Thus, this paper demonstrates the insulation oils' oxidation characteristics of both mineral and vegetable oils when each was exposed to different environments for 12 weeks. From this test, some properties including total acid number, water content and dielectric breakdown were changed under specific conditions and resources. Vegetable oils showed higher hydrophilicity and water saturation than those of mineral oils due to their molecular compositions. Under sunlight exposure condition, all insulation oils oxidized and changed their properties when exposing to the direct light, regardless of the resource used.

• Journal of the Korean Society of Radiology
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• v.3 no.1
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• pp.17-21
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• 2009

The Recently, large area matrix-addressed image detectors are investigated for X-ray imaging with medical diagnostic and other applications. In this paper, a new flat panel gas detector for diagnostic X-ray imaging is proposed, and its characteristics are investigated. The research of flat panel gas detector is not exist at all. Because of difficulty to inject gas against to atmospheric pressure. So almost gas detector made by chamber shape. We made flat panel sample by display technique. (ex: PDP, Fed, etc.) The experimental measurements, the transparent electrodes, dielectric layer, and the MgO protection layer were formed in front glass. And, the X-ray phosphor layer and address electrodes are formed in the rare glass. The dark current, the x-ray sensitivity and linearity as a function of electric field were measured to investigate the electrical properties. From the results, the stabilized dark current density and the significant x-ray sensitivity were obtained. And the good linearity as a function of exposure dose was showed in wide diagnostic energy range. These results means that the passive matrix-addressed flat panel gas detector can be used for digital x-ray imaging.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.98-103
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• 2013

In this work, we investigated the enhanced performance of IZO-based TFTs with $HfSiO_x$ gate insulators. Four types of $HfSiO_x$ gate insulators using different diposition powers were deposited by co-sputtering $HfO_2$ and Si target. To simplify the processing sequences, all of the layers composing of TFTs were deposited by rf-magnetron sputtering method using patterned shadow-masks without any intentional heating of substrate and subsequent thermal annealing. The four different $HfSiO_x$ structural properties were investigated x-ray diffraction(XRD), atomic force microscopy(AFM) and also analyzed the electrical characteristics. There were some noticeable differences depending on the composition of the $HfO_2$ and Si combination. The TFT based on $HfSiO_x$ gate insulator with $HfO_2$(100W)-Si(100W) showed the best results with a field effect mobility of 2.0[$cm^2/V{\cdot}s$], a threshold voltage of -0.5[V], an on/off ratio of 5.89E+05 and RMS of 0.26[nm]. This show that the composition of the $HfO_2$ and Si is an important factor in an $HfSiO_x$ insulator. In addition, the effective bonding of $HfO_2$ and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.1-7
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• 2021

This study investigated the structural, dielectric, ferroelectric, and strain properties of (0.98-x)Bi1/2Na1/2TiO3-0.02BiFeO3-xSrTiO3 (BNT-BF-100xST, x＝0.20, 0.22, 0.24, 0.26, and 0.28). All samples were successfully synthesized using the conventional solid-state reaction method and sintered at 1,175℃ for 2 h. The average grain size of the BNT-BF-100x ceramics decreased with increasing ST content. Furthermore, we observed that the ferroelectric- relaxor transition temperature (TF-R) decreased with increasing ST content, which eventually vanished in the BNT-BF-24ST ceramics. The results indicated that a ferroelectric to relaxor phase transition could be induced by ST modification. Consequently, a large electromechanical strain of 633 pm/V at 4 kV/mm was observed for the BNT-BF-26ST ceramics. These results imply that our materials have the competitive advantage of larger strain under lower operating field conditions compared with other BNT-based lead-free piezoelectric ceramics. We expect that BNT-BF-ST lead-free piezoelectric ceramics are promising candidates as a novel ternary BNT-based system and can find potential applications in actuators.