• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.59-66
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• 1993

PZT thin film deposited by rf magnetron sputtering was annealed by rapid thermal process(RTP) in PbO ambient to prevent vaporing of Pb and interface reactions. Si and TiN/Ti/Si substrates were prepared to survey application of TiN/Ti layer which can prevent interface interaction with Si and crack of PZT thin films. As temperature increased. PZT thin films surface on Si substrate appeared more severe cracks which should affect electrical properties deadly. TiN/Ti(40-150${\mu}{\Omega}{\cdot}cm$) layer applied for buffer layer suppressed interface interaction and film cracking. The measured leakage current(LC) and breakdown voltage(BV) of PZT thin film on TiN/Ti/Si substrate annealed at 650$^{\circ}$C for 15 sec (thickness of 2500$\AA$) were 38 nA/cm2 and 3.5 MV/cm and dielectric constant was 310 at 1 MHz, and remanent polarization (Pr) and coercive field (Ec) were 6.4${\mu}C/cm^{2}$ and 0.2MV/cm at 60 Hz, respectively.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.195-198
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• 1999

A Bi$_4$Ti$_3$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM. The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG analysis. The BIT thin film deposited on Pt/Ta/SiO$_2$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100㎸/cm is 4.71$mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250㎸/cm, the remanent polarization (Pr) and the coercive field (Ec) are 5.92$mutextrm{A}$/$\textrm{cm}^2$ and 86.3㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.263-267
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• 2007

Hafnium oxide $(HfO_2)$ films were deposited on Si(100) substrates by remote plasma-enhanced atomic layer deposition (PEALD) method at $250^{\circ}C$ using TEMAH [tetrakis(ethylmethylamino)hafnium] and $O_2$ plasma. $(HfO_2)$ films showed a relatively low carbon contamination of about 3 at %. As-deposited and annealed $(HfO_2)$ films showed amorphous and randomly oriented polycrystalline structure. respectively. The interfacial layer of $(HfO_2)$ films deposited using remote PEALD was Hf silicate and its thickness increased with increasing annealing temperature. The hysteresis of $(HfO_2)$ films became lower and the flat band voltages shifted towards the positive direction after annealing. Post-annealing process significantly changed the physical, chemical, and electrical properties of $(HfO_2)$ films. $(HfO_2)$ films deposited by remote PEALD using TEMAH and $O_2$ plasma showed generally improved film qualities compare to those of the films deposited by conventional ALD.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.419-439
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• 2018

Piezoelectric materials are essential parts of the electronics and electrical equipment used for consumer and industrial applications, such as ultrasonic piezoelectric transducers, sensors, actuators, transformers, and resonators. In this review, the development of piezoelectric materials and the figures of merit for various electromechanical applications are surveyed, focusing on piezoelectric crystals, i.e., the high-performance relaxor-$PbTiO_3$-based perovskite ferroelectric crystals and nonferroelectric high-temperature piezoelectric crystals. The uniqueness of these crystals is discussed with respect to different usages. Finally, the existing challenges and perspective for the piezoelectric crystals are discussed, with an emphasis on the temperature-dependent properties, from cryogenic temperatures up to the ultrahigh-temperature usage range.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.5
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• pp.699-705
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• 1986

Sb2S3 thin films were fabricated by vacuum evaporation of compound Sb2S3 at a pressure of 10**-5 torr. and in argon ambient. Then, their electrical and photoconductive properties were investigated. The Sb2S3 glass-layer showed maximum photosensitivity at the deposition rate of 250\ulcornersec, and Sb2S3 porous layer had mininum dielectric constant of 1.5 at the deposition rate of 0.3 um/sec and argon partial pressure of 0.2torr. Sb2S3 multi-layers were prepared at the different thickness ratio (B/A) to find the proper structural property suited for camera pick-up tube. Here, A is the sum of the thickness of Sb2S3 porous layer and Sb2S3 fine grain layer, and B is the thickness of Sb2S3 fine grain layer. As a result, photosensitivity had a peak value at the thickness ratio (B/A) of 60%.

• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.7-12
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• 1995

When a $Ta_O_5$ dielectric film is deposited on a bare silicon, the growth of $SiO_2$ at the $Ta_O_5$/Si interface cannot be avoided. Even though the $SiO_2$ layer is ultrathin (a few nm), it has great effects on the electrical properties of the capacitor. The concentration depth profiles of the ultrathin interfacial $SiO_2$ and $SiO_2/Si_3N_4$ layers were obtained using an Auger electron spectroscopy (AES) equipped with a cylindrical mirror analyzer (CMA). These AES depth profiles were quantitatively analyzed by comparing with the theoretical depth profiles which were obtained by considering the inelastic mean free path of Auger electrons and the angular acceptance function of CMA. The direct measurement of the interfacial layer thicknesses by using a high resolution cross-sectional TEM confirmed the accuracy of the AES depth analysis. The $SiO_2/Si_3N_4$ double layers, which were not distinguishable from each other under the TEM observation, could be effectively analyzed by the AES depth profiling technique.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.300-303
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• 1991

Sulphur-hexafluoride has extensively been used as an insulating gas of electric power equipment in substation for its high dielectric strength, non-toixity and non-flammable properties. But it is very expensive and is liquidizable under the condition of low temperature and high pressure. And it is very sensible to the locally high electric field strength. To resolve these problems, we studied 50% FOV and V-t characteristics of $SF_6-N_2$ mixtures under positive and negative lightning impulses using a 25mm rod-plane gap. 50% FOV of $SF_6-N_2$ 50% mixture was about 85% of pure $SF_6$ and it was known that $SF_6-N_2$ mixtures can be used as an economic substitution insulating gas for $SF_6$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.3
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• pp.124-129
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• 1989

The cordierite is of great interest for microelectronic packaging. Its main advantages are low dielectric constant and low thermal expansion. The cordierite precursor obtained by sol-gel synthesis whose sintering temperature is about $900^{circ}C$ is an amorphous and cristal white powder. Green and fired cordierite samples were studied by XPS for microscopic properties. At the surface the results of XPS show forte diminution of Mg in comparison with its value at volume and the deficit of Mg compensates by augmentation of Al and Si. $pi$-cordierite phase is present near the surface $<100{\AA}$ and small quantities of magnesium aluminate ($MgAl_2O_4) is present in the bulk. Sintering of the green cordierite introduces no chemical modification at the surface.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.295-301
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• 2000

The effect of V2O5 addition on the low temperature sintering of Pb(Mn1/3Sb2/3)O3-PZT ceramics, which is known as a prominent material for piezoelectric transformer application was studied, and the densification behavior and piezoelectric characteristics of the samples as a function of heating rate were also examined. V2O5 led the system to liquid phase sintering by forming liquid phase during sintering, which accelerated densification through the particle rearrangement in the early stage of sintering. The liquid phase mostly existed at grain boundaries retarded the evaporation of PbO, while the densification temperature and the weight loss of V2O5-free samples were higher than those of samples with V2O5. Faster heating improved the densification of the samples regardless of V2O5 addition. The low temperature sintering at 100$0^{\circ}C$ was achieved in PMS-PZT ceramics with high density and reasonable dielectric and piezoelectric characteristics. This result revealed optimistic way to the development of multi-layered piezoelectric transformers.