• Korean Journal of Materials Research
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• v.33 no.12
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• pp.517-524
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• 2023

BaTiO₃-Poly vinylidene fluoride (PVDF) solution was prepared by adding 0~25 wt% BaTiO₃ nanopowder and 10 wt% PVDF powder in solvent. BaTiO₃-PVDF film was fabricated by spreading the solution on a glass with a doctor blade. The output performance increased with increasing BaTiO₃ concentration. When the BaTiO₃ concentration was 20 wt%, the output voltage and current were 4.98 V and 1.03 ㎂ at an applied force of 100 N. However, they decreased when the over 20 wt% BaTiO₃ powder was added, due to the aggregation of particles. To enhance the output performance, the generator was poled with an electric field of 150~250 kV/cm at 100 ℃ for 12 h. The output performance increased with increasing electric field. The output voltage and current were 7.87 V and 2.5 ㎂ when poled with a 200 kV/cm electric field. This result seems likely to be caused by the c-axis alignment of the BaTiO₃ after poling treatment. XRD patterns of the poled BaTiO₃-PVDF films showed that the intensity of the (002) peak increased under high electric field. However, when the generator was poled with 250 kV/cm, the output performance of the generator degraded due to breakdown of the BaTiO₃-PVDF film. When the generator was matched with 800 Ω resistance, the power density of the generator reached 1.74 mW/m². The generator was able to charge a 10 ㎌ capacitor up to 1.11 V and turn on 10 red LEDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.457-460
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• 1999

The effects of electrical positive stress on n-channel LDD and offset structured poly-Si TFT\`s have been systematically investigated in order to analyze the transfer curve\`s shift mechanism. It has been found that the LDD and offset regions behave as a series resistance that reduce the electric field near drain. Hot carrier effects are reduced because of these results. After electrical stress transfer curve’s shift and variation of the off-current are dependent upon the offset length rather than offset region’s doping concentration. Variation of the subthreshold slope is dependent upon offset region’s doping concentration as well as offset length.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.44-47
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• 2003

In this paper, the electric field distribution in dielectric tube with one layer and spherical dielectric($ZrO_2$) in water was simulated. The reactor was made up of the spherical dielectric that is diameter : 3.0[mm], $ZrO_2(\varepsilon_r:10)$ and one glass plate of thickness(2[mm]), $\varepsilon_r$(10) as electrode. The discharge gap was 8[mm]. To get more strong electric field, the dielectric constant should be higher comparatively. Using the spherical dielectric for water discharge in dielectric tube, the location of equipotential line was shifting from the interior to the exterior. At real water discharge experimental, ozone was measured higher dissolved ozone in water at condition of water rate(l[l/min]) and injector than condition of non-injector or 2~3[l/min].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.40-43
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• 2003

In this paper, the electric field distribution in dielectric tube with one layer and spherical dielectric(glass) in water was simulated. The reactor was made up of the spherical dielectric that is diameter : 3.0[mm], glass(${\varepsilon}_r$:5) and one glass plate of thickness(2[mm]), ${\varepsilon}_r$(5) as electrode. The discharge gap was 8[mm). Toget more strong electric field, the dielectric constant should be higher comparatively. Using the spherical dielectric for water discharge in dielectric tube, the location of equipotential line was shifting from the interior to the exterior. At real water discharge experimental, $H_2O_2$ was measured higher generated $H_2O_2$ in water at condition of water rate(1[l/min]) and injector than condition of non-injector or 2-3[l/min])

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.260-264
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• 2017

Process variation effect on arch-structured gate stacked array (GSTAR) 3-D NAND flash is investigated. In case of arch-structured GSTAR, a shape of the arch channel is depending on an alignment of photo-lithography. Channel width fluctuates according to the channel hole alignment. When a shape of channel exceeds semicircle, channel width becomes longer, increasing drain current. However, electric field concentration on tunnel oxide decreases because less electric flux converges into a larger surface of tunnel oxide. Therefore, program efficiency is dependent on the process variation. Meanwhile, a radius of channel holes near the bottom side become smaller due to an etch slope. It also affects program efficiency as well as channel width. Larger hole radius has an advantage of higher drain current, but causes degradation of program speed.

• Bulletin of the Korean Chemical Society
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• v.33 no.8
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• pp.2737-2740
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• 2012

The use of plants to remove toxic metals from soil (phytoremediation) is emerging as a cost-effective alternative to conventional methods for the removal of heavy metals from contaminated soil. Indian mustard (Brassica juncea) was used as the plant to accumulate high tissue concentrations of lead when grown in contaminated soil. For this study, the application of an electric field combined effectively with EDTA-enhanced phytoremediation. A stimulation of direct and alternating electric potential was compared and EDTA-enhanced phytoremediation of lead using Indian mustard has been performed. The effects of experimental parameters such as operating voltage with different concentration of EDTA, the number of graphite electrodes, and cultivation period on the removal of toxic metal were studied. Shoot lead accumulations in Indian mustard increased as the concentration of EDTA and dc electric potential was increased. Two to four folds was increased when EDTA plus a dc electric potential was applied, compared to an ac electric potential. The maximum lead accumulation in the shoots was achieved by applying EDTA plus dc electric potential with 6 graphite electrodes.

• Korean Journal of Optics and Photonics
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• v.9 no.2
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• pp.86-91
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• 1998

Multimode planar waveguides have been fabricated by an electric-field assisted ion exchange in soda-lime glass substrates. Measurements of the mode indices have been made and the index profiles modeled on modified Fermi function are explained by a comparative analysis with the concentration profiles obtained using an electron probe X-ray micro analyzer. The analytical measurements showed that no more than 95% of sodium ions were replaced by the cesium ions. We established formulas for guide depth, mobility, and refractive index change, given the applied electric field, the diffusion temperature, and the time. We have verified the linear relations in the formulas not only between guide and root of diffusion time but also between guide depth and the applied electric filed experimentally.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.6
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• pp.77-82
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• 2003

In this paper, as the new type of multi-lines electrode which can formulate strong non-uniform electric field was installed in strong electrolytic water generator, shapes of pre-discharge in bubble and effects of bubble discharge on pH and oxidation/reduction potential change were intended to investigate. Consequently, as multi-lines electrode was installed in side of anode, pre-discharges generated from anode electrode could be observed. This pre-discharge was generated from differences of permittivities between bubble and water in strong non-uniform electric field. And ion concentration in electrolytic water generator was increased by dissolving of ions generated from bubble discharge. So, as generated high concentration ions were separated and assembled to each electrode and reaction of oxidation/reduction was increased, it was shown that strong electrolytic water could be generated.

• Journal of the Society of Disaster Information
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• v.15 no.1
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• pp.28-38
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• 2019

Purpose: The purpose of this study is to contribute to improvement of measurement management level of construction structure and technology development of monitoring sensor by presenting the detailed causes and improvement plans of construction monitoring sensor's decline in durability. Method: The causes and improvement plans of the durability degradation of the construction monitoring sensor were divided into the construction field and the electric, electronic field. The detailed status was reviewed. Results: In the field of construction, approval and inspection, inspection and testing, verification and calibration, and minimization of loss and damage ratio were reviewed. In the field of electric and electronics, sensor package and sealing, disconnection of stress concentration area, damage caused by lightning and corrosion were reviewed. Conclusion: It is expected that the durability of monitoring sensors applied to the construction site will become longer than the present status based on the study that analyzed causes and improvement plans of construction monitoring sensor's decline in durability in the field of construction and electric, electronic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.877-882
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• 2005

In order to fabricate a high breakdown SiC-SBD (Schottky barrier diode), we investigate an effect on metal guard ring (MGR) in breakdown characteristics of the SiC-SBD. The breakdown characteristics of MGR-type SiC-SBD is significantly dependent on both the guard ring metal and the alloying time of guard ring metal. The breakdown characteristics of MGR-type SiC-SBDs are essentially improved as the alloying time of guard ring metal is increased. The SiC-SBD without MGR shows less than 200 V breakdown voltage, while the SiC-SBD with Al MGR shows approximately 700 V breakdown voltage. The improvement in breakdown characteristics is attributed to the field edge termination effect by the MGR, which is similar to an implanted guard ring-type SiC-SBD. There are two breakdown origins in the MGR-type SiC-SBD. One is due to a crystal defects, such as micropipes and stacking faults, in the Epi-layers and the SiC substrate, and occurs at a lower electric field. The other is due to the destruction of guard ring metal, which occurs at a higher electric field. The demolition of guard ring metal is due to the electric field concentration at an edge of Schottky contact metal.