• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권4호
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• pp.208-212
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• 2004

In this paper, the characteristics of co-sputtered Ru-Zr metal alloy as gate electrode of MOS capacitors have been investigated. The atomic compositions of alloy were varied by using the combinations of relative sputtering power of Ru and .Zr. C-V and I-Vcharacteristics of MOS capacitors were measured to find the effective oxide thickness and work function. The alloy made of about 50% of Ru and 50% of Zr exhibited an adequate work function for nMOS. C-V and I-V measurements after 600 and $700^{\circ}C$ rapid thermal annealing were performed to prove the thermal and chemical stability of the Ru-Zr alloy film. Negligible changes in the accumulated capacitance and work function before and after annealing were observed. Sheet resistance of Ru-Zr alloy was lower than that of poly-silicon. It can be concluded that the Ru-Zr alloy can be a possible substitute for the poly-silicon used as a gate of nMOS.

• 전기화학회지
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• 제17권4호
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• pp.237-244
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• 2014

We report novel and simple structure of supercapacitors fabricated by using flexible glass fibre separators as templates. This method does not require separate electrodes, binders and high pressure/temperature to build the supercapacitor unit cells as required by the conventional technology. The supercapacitors were fabricated by drop-casting solution mixtures of carbonaceous active materials/gel electrolytes onto two sides of glass fibre separators. Two carbonaceous materials (nanoscaled activated carbons, multi-walled carbon nanotubes) were investigated as electrode materials. The electrochemical measurements reveal that the separatorbased supercapacitors using ACs successfully demonstrated significant mass specific capacitance ($22.3F\;g^{-1}$) and energy density ($9.7Wh\;kg^{-1}$), indicating this method can be useful in fabricating flexible, wearable and stretchable energy storage devices in more straightforward and cost-effective way than current technology.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 추계종합학술대회
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• pp.689-692
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• 2005

생체 전기 임피던스법(Bioelectrical Impedance Analysis, BIA)은 신체의 체수분량을 측정하고 이를 바탕으로 체지방량을 측정할 수 있다. 이를 효율적으로 측정하기 위해서 4개의 전극을 손바닥에 위치 시키고 전류(50kHz, 800uA)를 신체에 흘려 보내 전압과 캐패시턴스를 측정하고 기본 파라미터인 키, 몸무게, 나이와 성별을 입력하여 체지방량을 측정하는 방법을 제안하였다.

• Journal of Power Electronics
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• 제6권3호
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• pp.205-213
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• 2006

A cost-effective magnetic-coupled AC-PDP sustain driver with low switching loss is proposed. The transformer reduces current stress in the energy recovery switches which affects circuit cost and reliability. The turns-ratio can be used to adjust the sustain pulse slopes which affect gas discharge uniformity. Dividing the recovery paths prevents abrupt changes in the output capacitance and thereby switching losses of the recovery switches is reduced. In addition, the proposed circuit has a more simple structure because it does not use the recovery path diodes which also afford a large recovery current. By reducing the current stress and device count in the energy recovery circuit, the proposed driver may have decreased circuit cost and improved circuit reliability.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1366-1367
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• 2006

Embedded capacitor technology is one of the effective packaging technologies for further miniaturization and higher performance of electric package systems. So we used the 3D EM simulator for embedded capacitor design in 8-layed PCB(Printed Circuit Board). The designed capacitors value are 2 pF, 5pF, 10 pF, respectly. we investigated characteristics of capacitance - frequency and SRF(Self Resonance Frequency) as changing the rate of hight and width of upper pad of embedded capacitors.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1515-1516
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• 2006

The low luminous efficacy is one of the major demerits of plasma display panel (PDP). In this work we propose the new driving method for high efficiency AC-PDP and analyze its discharge characteristics. The suggested method can control the effective capacitance of panel by external circuit. As a result of the new suggested method, the current becomes less and the discharge time becomes long, because of voltage distribution between panel and auxiliary capacitor. So this method can decrease the power consumption much more than that of the conventional driving method.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1292-1294
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• 1993

This paper proposes a new structure of polycrystalline silicon(poly-Si) thin film transistor(TFT) having a thick gate-oxide below the gate edge. The new structure is fabricated by the gate re-oxidation in wet ambient. It is shown that the thick gate-oxide below the gate edge is effective in reducing the leakage current and the gate-drain overlap capacitance. We have simulated this device by using the SSUPREM4 process simulator and the SPISCES-2B device simulator. As a simulation result it is found that the new structure provides a low tentage current less than 0.2 pA and achieves a on/off ratio as high as $5{\times}10^7$.

• International Journal of Precision Engineering and Manufacturing
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• 제6권4호
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• pp.44-48
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• 2005

As mechanical components are miniaturized, the demands on micro die/mold are increasing. Micro mechanical components usually have high hardness and good conductivity. Micro electrical discharge machining (MEDM) can thus be an effective way to machine those components. In micro cavity fabrication using MEDM, it is observed that the bottom surface of the cavity is distorted. Electric charges tend to be concentrated at the sharp edge, and debris cannot be drawn off easily at the center of the bottom surface. These two phenomena make the bottom surface of electrode and workpiece distort. As machining depth increases, the distorted shape of the electrode approaches hemisphere. This process is affected by both capacitance and the size of electrode. By using a smaller electrode than the desired cavity size and appropriate tool movement, bottom shape distortion can be prevented.

• 한국초전도ㆍ저온공학회논문지
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• 제24권4호
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• pp.11-15
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• 2022

We conducted numerical calculations to obtain the critical current as a function of the magnetic flux through the topologically trivial and non-trivial superconducting quantum interference devices (SQUIDs), with varying the capacitive and inductive couplings of Josephson junctions (JJs). Our calculation results indicate that a nontrivial SQUID is almost indistinguishable from trivial SQUID, considering the effective capacitance coupling. When the SQUID contains 2π- and 4π-periodic supercurrents, the periodicity of the current-flux relation can be distinguished from the purely trivial or nontrivial SQUID cases, and its difference is sensitive to the relative ratio between the topologically trivial and nontrivial supercurrents. We believe that our calculation results would provide a practical guide to quantitatively measure the portion of the topologically nontrivial supercurrents in experiments.

• 공업화학
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• 제26권4호
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• pp.495-504
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• 2015

본 연구에서는 충진층 플라즈마 반응기의 특성 및 에틸렌을 분해하는데 있어서 플라즈마 반응기의 직렬 및 병렬 배열에 따른 영향에 대해 조사하였다. 플라즈마 방전 개시 전의 반응기 유효 커패시턴스는 ${\gamma}$-알루미나 펠릿이 충진된 경우가 충진되지 않은 경우보다 컸으나, 일단 플라즈마 방전이 개시되고 나면 ${\gamma}$-알루미나 충진 여부와 관계없이 유효 커패시턴스가 유사하였다. 플라즈마 상태에서 생성되는 전자의 에너지는 전기장세기에 크게 의존하며, 0~20%(v/v) 범위의 산소농도(질소 : 80~100% (v/v))에서는 기체조성에 크게 영향을 받지 않는 것으로 나타났다. 플라즈마 상태에서 생성되는 여러 활성 성분들 중 바닥상태의 산소원자 및 오존이 산화 반응에 주로 관여하며, 전기장세기가 높아질수록 산소원자가 상대적으로 감소하는 대신 질소원자의 분율이 급격히 증가한다. 플라즈마 공정에서 전압, 방전 전력, 기체 유량, 체류시간 등 반응기의 성능에 영향을 주는 여러 가지 파라미터들이 있지만, 모든 파라미터들이 비에너지밀도 하나로 통합될 수 있음을 확인하였으며, 직렬 및 병렬로 연결된 반응기의 성능도 비에너지밀도만의 함수로 간주할 수 있으므로 반응기 설계 과정이 크게 단순화될 수 있다. 비에너지밀도의 함수로 나타낸 반응속도상수를 이용하여 계산한 결과도 실험데이터를 잘 예측할 수 있었다.