• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.27-34
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• 2015

The correlation between crack propagation and localized recrystallization are compared in a series of cross section analyses on thermal cycled edgebond and underfilm material applied wafer level chip scale package (WLCSP) components with a baseline of no-material applied WLCSP components. The results show that the crack propagation distribution and recrystallization region correlation can explain potential degradation mechanisms and support the damage accumulation history in a more efficient way. Edgebond material applied components show a shift of damage accumulation to a more localized region, thus potentially accelerated the degradation during thermal cycling. Underfilm material applied components triggered more solder joints for a more wider distribution of damage accumulation resulting in a slightly improved thermal cycling performance compared to no-material applied components. Using an analysis on localized distribution of recrystallized areas inside the solder joint showed potential value as a new analytical approach.