• 한국전산유체공학회:학술대회논문집
• /
• 2009.11a
• /
• pp.8-12
• /
• 2009

In this study the performance of the nozzle of a rocket system is evaluated using a CFD code. The main emphasis of the investigation is placed on the effects of the number (9 and 12) and the depth of fluted edge in the rocket nozzle. It is observed that as the depth increases the rolling moment of the nozzle increases while the thrust of the nozzle decreases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1991.10a
• /
• pp.63-67
• /
• 1991

Amorphous silicon films were deposited on glass, [100] single crystal silicon wafer with thermally grown silicon dioxide, and [100] silicon wafer substrates by Plasma Enhanced Chemical Vapor Deposition(with argon diluted silane source gas). Growth rate, UV optical band edge, and the hydrogen quantity in the amorphous silicon films have been investigated as a function of the preparation conditions by measuring film thickness, UV-absorbency, and FT-IR transmittance. The growth rate of the ${\alpha}$-Si:H films increases with increasing substrate temperture, flow rate and R.F. power density. The UV optical band edge shifts to blue with the increases in the deposition pressure. Increasing substrate temperature shifts the UV optical band edge of the films to red. Hydrogen quantity in the ${\alpha}$-Si:H films increases with an increases in the R.F. powr and decreases with an increase in the substrate temperature.

• Proceedings of the KWS Conference
• /
• 2007.11a
• /
• pp.20-22
• /
• 2007

Welding-induced buckling distortion at the free edge of thin-plated panels has been studied. Welding distortion at free edges causes the additional man hours to straighten for the easy adjusting works of the following assembly stage. Therefore, it is necessary to develop a free-edge distortion control method. It is the purpose in the study to evaluate the effectiveness of buckling distortion prevention of the current design practice and design modification.

• Bulletin of the Korean Chemical Society
• /
• v.16 no.10
• /
• pp.972-976
• /
• 1995

A trace amount of 4-biphenylcarboxylate having a pre-twisted biphenyl moiety was attached to a poly(methyl methacrylate) side chain and the fluorescence properties of the chromophore were investigated in various solvents such as ethyl acetate and butyl chloride. At room temperature, the polymer exhibited a distinct red shift of the short wavelength emission (325 nm) and an enhanced emission intensity around 430 nm upon excitation at the absorption red edge. The temperature dependence of the intensity ratio (R) of the 325 nm emission to the 430 nm emission was observed when exciting at the red edge over the temperature range between -20 and 60 ℃. However, the temperature dependence was not observed when exciting at the shorter wavelength. The Arrhenius plot of the R value shows the activation energy of 6.0 kJ/mol which is in good agreement with the energy required for the twist of the biphenyl moiety. Together with the results of red edge excitation effects it was concluded that the pre-twisted geometry of the biphenyl moiety is preserved by the restriction of the polymer chain to facilitate the formation of the twisted intramolecular charge transfer (TICT) state upon excitation.

• 제어로봇시스템학회:학술대회논문집
• /
• 2002.10a
• /
• pp.55.4-55
• /
• 2002

In the semiconductor fabrication, particle contamination is wide-spread and one of major causes to yield loss. Extensive testing has revealed that even careful handling of wafers during processing may cause photo-resist materials to flake off wafer edges. So, to remove the photo-resist at the outer 5mm of wafers, UV(Ultraviolet) rays are exposed. WEE (Wafer Edge Exposure) process station is the system that exposes the wafer edge as prespecified by controlling the positioning mechanism and maintaining the light intensity level In this work, WEE process station has been designed so as to significantly lower the amount of particle contamination which occurs even during the most r...

• Journal of the Korean Society for Precision Engineering
• /
• v.21 no.1
• /
• pp.61-70
• /
• 2004

Generally, ceramics are very difficult-to-cut materials because of its high strength and hardness. The machining process of ceramics can be characterized by cracking and brittle fracture. In the machining of ceramics, edge chipping and crack propagation are the principal reasons to cause surface integrity deterioration. Such phenomenon can cause not only poor dimensional and geometric accuracy, but also possible failure of the ceramic parts. Ceramics can be machined with traditional method such as grinding and polishing. However, such processes are generally cost-expensive and have low material removal rate. Thus, in this paper, to overcome these problems. BN powder, which gives good cutting property, is added for the fabrication of machinable ceramics by volume of 5,10,15,20,25 and 30%. And, mechanical properties, R-curve behavior and machining tests are carried out to evaluate the machining properties of the manufactured machinable ceramics.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1573-1576
• /
• 2008

A simulation system is developed to calculate the apparent motion-induced image from a sequence of temporal luminance transitions, while using the properties of the human visual system. Based on the simulation method, both edge (moving block) and detail degradation (line spreading, grating, sinusoidal pattern), and also color aberration are discussed.

• Laser Solutions
• /
• v.11 no.3
• /
• pp.21-24
• /
• 2008

Hybrid laser welding technology is a good process to reduce a thermal distortion and increase the productivity. However, it requires a high investment and a massive modification of the fabrication line such as a gantry system, milling machine for the edge preparation, high power laser system and weld machine. Therefore the development of an economical laser welding system is a crucial point to apply this system in shipbuilding yard. In this study, a portable hybrid laser welding carriage was developed for I-butt joint without edge milling. It is expected that the carriage type system could reduce investment cost.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.5
• /
• pp.497-501
• /
• 2004

The crystal structure of the GaN film on the AIN buffer layer grown by R. F sputtering with different thickness has been studied using X-ray scattering and transmission electron microscopy(TEM). The interface roughness between the AIN buffer layer and the epitaxial GaN film, due to crossover from planar to island grains, produced edge dislocations. The strain, coming from lattice mismatch between the AIN buffer layer and the epitaxial GaN film, produced screw dislocations. The density of the edge and screw dislocation propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.

• 한국초전도학회:학술대회논문집
• /
• v.11
• /
• pp.39-39
• /
• 2001