• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.123-124
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• 2007

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the liteniture. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The temperature dependence of the energy band gap of the $AgInS_2$ obtained from the photocurrent spectrum was well described by the Varshni's relation, $E_g(T)=\;E_g(0)\;eV-(7.78\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;116\;K\;K)$. Also, Eg(0) is the energy band gap at 0 K, which is estimated to be 2.036 eV at the valence band state A and 2.186 eV at the valence band state B.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.101-102
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films. $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-Insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C$ and $440^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4} eV/K)T^2/(T+332 K)$. After the as-grown $AgGaS_2$ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.

• Bulletin of the Korean Chemical Society
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• 제32권2호
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• pp.613-619
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• 2011

Colloidal silver nanoparticles (AgNPs) have been commercialized as the typically stabilized form via the addition of a variety of surfactants or polymers. Herein, to examine the effects of stabilizing AgNPs in suspension, we modified the surface of bare AgNPs with four type of surfactants (NaDDBS, SDS, TW80, CTAB) and polymers (PVP, PAA, PAH, CMC). The modified AgNPs was applied to compare suspension stability and nanotoxicity test using Escherichia coli (E. coli) as a model organism. Modification of AgNPs surface using chemical stabilizer may be not related with molecular weight, but chemical structure such as ionic state and functional group of stabilizer. In this study, it is noteworthy that AgNPs modified with a cationic stabilizer (CTAB, PAH) were importantly toxic to E. coli, rather than anionic stabilizers (NaDDBS, SDS). Comparing similar anionic stabilizer, i.e., NaDDBS and SDS, the result showed that lipophilicity of chemical structure can affect on E. coli, because NaDDBS, which contains a lipophilic benzene ring, accelerated the cytotoxicity of AgNPs. Interestingly, none of the stabilizers tested, including biocompatible nonionic stabilizers (i.e., TW80 and cellulose) caused a reduction in AgNP toxicity. This showed that toxicity of AgNPs cannot be reduced using stabilizers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.179-180
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• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}\;10^{16}/cm^3$, $139\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501\;eV\;-\;(8.79{\times}10^{-4}\;eV/K)T^2$/(T + 250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the phcitocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the $\Gamma_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_1$-exciton peaks for n = 1.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.139-144
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• 2001

In this study, we have investigated the photoinduced birefringence of Ag plarized-photodoping in double-layer of Ag doped chalcognide thin films and dependence of polarization states in chalcogenide thin films. Also, we have investigated the polarization dependence of photoinduced birefringence and the anisotropy of absorption in an amorphous As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ chalcogenide thin films using two 632.8nm He-Ne lasers, which have a smaller energy than the optical energy gap (E$\sub$OP/) of the film, i.e., an exposure of sub-bandgap light (hν$\sub$op/). The photoinduced phenomena of Ag polarized-photodooping increasing the linear dichroism(d), about 84% and birefringence(Δn), about 23%. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin films.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 컴퓨터소사이어티 추계학술대회논문집
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• pp.107-110
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• 2003

In this paper, we propose sharing 3D media between multisite using enhanced Access Grid (e-AG) which is a composition of 3D display and Access Grld (AG) Conventional AG and other collaborative systems have a limitation to share immersive 3D media Thus, proposed system supports sharing 3D media contents in a AG meeting section. Real object can be shared by acquiring stereo image with pre-calibrated stereo camera and by delivering, and virtual object can be shared by transmitting state information after downloading 3D model. And also, real video scene acquired by stereo camera and virtual object from 3D model can be displayed on the 3D display system of each node adaptively. The characteristics of proposed sharing method are sharing 3D media, displaying 3D media on a system adaptively, supporting real-time interaction. The proposed sharing method will be used remote lecture, remote collaboration with 3D media.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• 한국결정성장학회지
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• 제11권6호
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• pp.274-284
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• 2001

A stoichimetric mixture of evaporating materials for $AgInS_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $AgInS_2$mixed crystal was deposited on thorughly etched semi-insulating GaAs(100) substrate by the Hot wall Epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $AgInS_2$ single crystal the films measured from Hall effect by van der Pauw method are $9.35\times 10^{16}/\terxtm{cm}^3$ and $294\terxtm{cm}^2$/V.s at 293 K, respectively. From the optical absorption measurement the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin film was found to be $E_g$(T)= 2.1365eV-($9.89\times 10^{-3}eV/T^2$/(2930+T). After the as-grown $AgInS_2$ single crystal thin films was annealed in $Ag^-S^-$ and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal the films has been investigated by using the photoluminescence(PL) at 10K. The native defects of $V_{Ag},V_s, Ag_{int}$ and $S_{int}$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $AgInS_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in $AgInS_2$ /GaAs did not form the native defects because In is $AgInS_2$ single crystal thin films did exist in the form of stable bonds.

• Archives of Pharmacal Research
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• 제10권1호
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• pp.18-24
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• 1987

Mouse monocolonal antibodies to Hepatitis B surface antien (HBsAg) were prepared and their functional capabilities tested by the method of solid phase enzyme linked immuno sorbent assay (ELISA). HBsAg binding studies inicated that one monoclonal antibody 6E-1-1 bound more HBsAg at a faster rate than the other monoclonal antibodies. Also, for the binding inhibition studies with the selected monoclonal antibody 6E-1-1, one monoclonal antibody 8D-3-6 didn't exhibit binding inhibition for HBsAg. Then, a simultaneous ELISA method was developed for the immunodiagnosis of HBsAg. Different combinations of two monoclonal antibodies as solid phase and horseradish peroxidase (HRPO) labeled phase were studied. The combination of monoclonal antibody of higher affinity constant (6E-1-1) immobilized in a solid phase and monoclonal antibody of lower affinity constant (8D-3-6) as a HRPO laeled phase was more sensitive when two monoclonal antibodies of different affinity constants for HBsAg were prepared.

• Toxicological Research
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• 제32권4호
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• pp.301-309
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• 2016

Due to undesirable hazardous interactions with biological systems, this investigation was undertaken to evaluate the effect of chronic exposure to silver on certain biochemical and some oxidative stress parameters with histopathological examination of brain, as well as the possible protective role of selenium and/or vitamin E as nutritional supplements. Thirty six male rats were divided into six groups of six each: the first group used as a control group. Group II given both vitamin E (400 mg/kg) of diet and selenium (Se) (1 mg/L) in their drinking water. Group III given silver as silver nitrate ($AgNO_3$) (20 mg/L). Group IV given vitamin E and $AgNO_3$. Group V given both $AgNO_3$ and selenium. Group VI given $AgNO_3$, vitamin E and Se. The animals were in the same exposure conditions for 3 months. According to the results which have been obtained; there was an increase in serum lactate dehydrogenase (LDH), lipase activities and cholesterol level, a decrease in serum total protein, calcium and alkaline phosphatase (ALP) activity in Ag-intoxicated rats. Moreover, the findings showed that $Ag^+$ ions affected antioxidant defense system by decreasing superoxide dismutase (SOD) activity and increasing vitamin E concentration with a high level of malondialdehyde (MDA) in brain tissue. The histological examination also exhibited some nervous tissue alterations including hemorrhage and cytoplasm vacuolization. However, the co-administration of selenium and/or vitamin E ameliorated the biochemical parameters and restored the histological alterations. In conclusion, this study indicated that silver could cause harmful effects in animal body and these effects can be more toxic in high concentrations or prolonged time exposure to this metal. However, selenium and vitamin E act as powerful antioxidants which may exercise adverse effect against the toxicity of this metal.