• Title/Summary/Keyword: dynamic SIMS

Search Result 20, Processing Time 0.022 seconds

The etching characteristics of $(Ba_{0.6}Sr_{0.4})TiO_{3}$ film Using $Ar/CF_{4}$ Inductively Coupled Plasma ($Ar/CF_{4}$ 유도결합 플라즈마로 식각된 $(Ba_{0.6}Sr_{0.4})TiO_{3}$ 박막의 특성분석)

  • Kang, Pill-Seung;Kim, Kyoung-Tae;Kim, Dong-Pyo;Kim, Chang-Il;Lee, Soo-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.05b
    • /
    • pp.16-19
    • /
    • 2002
  • (Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

  • PDF

CsX+ SNMS의 Matrix Effect 감소연구

  • 문환구;김동원;한철현;김영남;심태언
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 1992.02a
    • /
    • pp.17-18
    • /
    • 1992
  • SIMS is an indispensable surface analysis instrument in trace element depth p profiling because of high detection sensitivity and excellent depth r resolution, however, it requires standard sample to do quantitative analysis d due to matrix effect depending on the species of impurities and sample m matricies and on the sputtering rates. A Among the SNMS technology developed to supply the deficiency, we researched i into CsX+ SNMS which improved the resul t quanti tati vely wi thout any extra epuipments. So basic SNMS functions were confirmed through matrix element composition rate a analysis using Si02 layer etc. and adaptability to trace element c concentration analysis was tried. For that purpose we compared SIMS depth profile data for Boron which presented s strong matrix effect on account of Fluorin existence after BF2 ion implantation on silicon substrate with SNMS data. d dynamic range were investigated. A After these experements we concluded that CsX+ SNMS reduced matrix effect and we could apply it to profile impurity elements.

  • PDF

Research of Matrix Effect Reduction of $CsX^+$ SNMS ($CsX^+$ SNMS의 Matrix Effect 감소연구)

  • 문환구;김동원;한철현;김영남;심태언
    • Journal of the Korean Vacuum Society
    • /
    • v.1 no.1
    • /
    • pp.115-120
    • /
    • 1992
  • SIMS is an indispensable surface analysis instrument in trace element depth profiling because of high detection sensitivity and excellent depth resolution, however, it requires a standard sample to do quantitative analysis due to matrix effect depending on the species of impurities and sample matricies and on the sputtering rates. Among the SNMS technology developed to supply the deficiency, we researched into CsX+ SNMS which improved the result quantitatively without any extra epuipments. So basic SNMS functions were confirmed through matrix element composition rate analysis using Siq layer etc., and adaptability to trace element concentration alaysis was tried. For that purpose we compared SIMS depth profile data for Boron which presented strong matrix effect on account of Fluorin existence after BF2 ion implantation on silicon substrate with SNMS data. Also detection limit and dynamic range were investigated. After these experements we concluded that CsX+ SNMS reduced matrix effect and we could apply it to profile impurity elements.

  • PDF

Characteristics of Diurnal Variation of Volatile Organic Compounds in Seoul, Korea during the Summer Season (서울지역 여름철 VOCs 일변동 특성에 관한 연구)

  • Park, Jong-sung;Song, In-ho;Kim, Hyun-woong;Lim, Hyung-bae;Park, Seung-myung;Shin, Su-na;Shin, Hye-jung;Lee, Sang-bo;Kim, Jeong-su;Kim, Jeong-ho
    • Journal of Environmental Analysis, Health and Toxicology
    • /
    • v.21 no.4
    • /
    • pp.264-280
    • /
    • 2018
  • In this study, volatile organic compounds (VOCs) were measured using a proton transfer reaction-time of flight-mass spectrometer (PTR-ToF-MS) at the Seoul Metropolitan Area Intensive Monitoring Station (SIMS) in Korea during the summer season of 2018. The results revealed that oxygenated VOCs (OVOCs) contributed a large fraction (83.6%) of the total VOCs, with methanol being the most abundant constituent (38.6%). The VOCs measured at SIMS were strongly influenced by local conditions. Non-volatile organic compounds (NVOCs), such as pinene, increased due to northeasterly wind direction in the morning, and OVOCs and anthropogenic VOCS (AVOCs) increased with northwesterly wind direction during the daytime. This was the result of the eastward location of Bukhansan National Park and the westward location of urban area from the SIMS location. The VOCs included abundant oxidized forms of VOCs, which can affect the generation of fine dust through various response pathways in the atmosphere. The real-time measurement technique using PTR-ToF-MS suggested in this study is expected to contribute to an improved scientific understanding of high-concentration fine dust events because the high temporal resolution makes it possible to analyze the variations of VOCs reflected in dynamic events.

Effects of Ti and TiN Capping Layers on Cobalt-silicided MOS Device Characteristics in Embedded DRAM and Logic

  • Kim, Jong-Chae;Kim, Yeong-Cheol;Choy, Jun-Ho
    • Journal of the Korean Ceramic Society
    • /
    • v.38 no.9
    • /
    • pp.782-786
    • /
    • 2001
  • Cobalt silicide has been employed to Embedded DRAM (Dynamic Random Access Memory) and Logic (EDL) as contact material to improve its speed. We have investigated the influences of Ti and TiN capping layers on cobalt-silicided Complementary Metal-Oxide-Semiconductor (CMOS) device characteristics. TiN capping layer is shown to be superior to Ti capping layer with respect to high thermal stability and the current driving capability of pMOSFETs. Secondary Ion Mass Spectrometry (SIMS) showed that the Ti capping layer could not prevent the out-diffusion of boron dopants. The resulting operating current of MOS devices with Ti capping layer was degraded by more than 10%, compared with those with TiN.

  • PDF

Evaluation of Characteristics of Oxidized Thin LPCVD-$Si_{3}N_{4}$ Film (얇은 열산화-질화막의 특성평가)

  • 구경완;조성길;홍봉식
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.29A no.9
    • /
    • pp.29-35
    • /
    • 1992
  • Dielectric thin film of N/O (Si$_{3}N_[4}/SIO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(Dry & pyrogenic oxidation methods) of the top Si$_{3}N_[4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high frequency C-V meter, high resolution TEM, AES, and SIMS. The thickness limit of Si$_{3}N_[4}$ film in making thin N/O structure layer was 7nm. In this experiment, the film with thinner than 7nm was not thick enough as oxygen diffusion barrier, and oxygen punched through the film and interfacial oxidation occurred at the phase boundary between Si$_{3}N_[4}$ and polycrystalline silicon electrode.

  • PDF

The Etching Characteristics of (Ba, Sr) $TiO_3$Thin Films Using Magnetically Enhanced Inductively Coupled Plasma (자장강화된 유도결합 플라즈마를 이용한 (Ba, Sr) $TiO_3$박막의 식각 특성 연구)

  • 민병준;김창일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.13 no.12
    • /
    • pp.996-1002
    • /
    • 2000
  • Ferroelectric (Ba, Sr) TiO$_3$(BST) thin films have attracted much attention for use in new capacitor materials of dynamic random access memories (DRAMs). In order to apply BST to the DRAMs, the etching process for BST thin film with high etch rate and vertical profile must be developed. However, the former studies have the problem of low etch rate. In this study, in order to increase the etch rate, BST thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) that have much higher plasma density than RIE (reactive ion etching) and ICP (inductively coupled plasma). Experiment was done by varying the etching parameters such as CF$_4$/(CF$_4$+Ar) gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 170nm/min under CF$_4$/CF$_4$+Ar) of 0.1, 600 W/-350 V and 5 mTorr. The selectivities of BST to Pt and PR were 0.6 and 0.7, respectively. Chemical reaction and residue of the etched surface were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS).

  • PDF

Reliability of N/O($SiO_2$/$Si_3$$N_4$) Films According to Top Oxidation Condition (상부산화 조건에 따른 N/O($SiO_2$/$Si_3$$N_4$) 구조막의 신뢰성 평가)

  • 구경완;홍봉식
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.29A no.9
    • /
    • pp.20-28
    • /
    • 1992
  • Dielectric thin film of N/O ($Si_{3]N_{4}/SiO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(dry & pyrogenic oxidation methods) of the top 7nm $Si_{3]N_{4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high resolution TEM, AES and SIMS. The insulating characteristics(I-V characteristics) were investigated by HP 4145, and the characteristics of TDDB (Time Dependent Dielectric Breakdown) were evaluated by using CCST(Current Constant Stress Time) method. In this experiment, The optimum oxidation condition for preparation of good insulating and TDDB characteristics of N/O film was pyrogenic oxidation at 85$0^{\circ}C$ for 30 minutes. The leakage current was reduced from 400pA to 7.5pA when SiO$_{2}$ film with thickness of 2nm was formed on the top of $Si_{3]N_{4}$ film by the pyrogenic oxidation method.

  • PDF

A Study on Industries's Leading at the Stock Market in Korea - Gradual Diffusion of Information and Cross-Asset Return Predictability- (산업의 주식시장 선행성에 관한 실증분석 - 자산간 수익률 예측 가능성 -)

  • Kim Jong-Kwon
    • Proceedings of the Safety Management and Science Conference
    • /
    • 2004.11a
    • /
    • pp.355-380
    • /
    • 2004
  • I test the hypothesis that the gradual diffusion of information across asset markets leads to cross-asset return predictability in Korea. Using thirty-six industry portfolios and the broad market index as our test assets, I establish several key results. First, a number of industries such as semiconductor, electronics, metal, and petroleum lead the stock market by up to one month. In contrast, the market, which is widely followed, only leads a few industries. Importantly, an industry's ability to lead the market is correlated with its propensity to forecast various indicators of economic activity such as industrial production growth. Consistent with our hypothesis, these findings indicate that the market reacts with a delay to information in industry returns about its fundamentals because information diffuses only gradually across asset markets. Traditional theories of asset pricing assume that investors have unlimited information-processing capacity. However, this assumption does not hold for many traders, even the most sophisticated ones. Many economists recognize that investors are better characterized as being only boundedly rational(see Shiller(2000), Sims(2201)). Even from casual observation, few traders can pay attention to all sources of information much less understand their impact on the prices of assets that they trade. Indeed, a large literature in psychology documents the extent to which even attention is a precious cognitive resource(see, eg., Kahneman(1973), Nisbett and Ross(1980), Fiske and Taylor(1991)). A number of papers have explored the implications of limited information- processing capacity for asset prices. I will review this literature in Section II. For instance, Merton(1987) develops a static model of multiple stocks in which investors only have information about a limited number of stocks and only trade those that they have information about. Related models of limited market participation include brennan(1975) and Allen and Gale(1994). As a result, stocks that are less recognized by investors have a smaller investor base(neglected stocks) and trade at a greater discount because of limited risk sharing. More recently, Hong and Stein(1999) develop a dynamic model of a single asset in which information gradually diffuses across the investment public and investors are unable to perform the rational expectations trick of extracting information from prices. Hong and Stein(1999). My hypothesis is that the gradual diffusion of information across asset markets leads to cross-asset return predictability. This hypothesis relies on two key assumptions. The first is that valuable information that originates in one asset reaches investors in other markets only with a lag, i.e. news travels slowly across markets. The second assumption is that because of limited information-processing capacity, many (though not necessarily all) investors may not pay attention or be able to extract the information from the asset prices of markets that they do not participate in. These two assumptions taken together leads to cross-asset return predictability. My hypothesis would appear to be a very plausible one for a few reasons. To begin with, as pointed out by Merton(1987) and the subsequent literature on segmented markets and limited market participation, few investors trade all assets. Put another way, limited participation is a pervasive feature of financial markets. Indeed, even among equity money managers, there is specialization along industries such as sector or market timing funds. Some reasons for this limited market participation include tax, regulatory or liquidity constraints. More plausibly, investors have to specialize because they have their hands full trying to understand the markets that they do participate in

  • PDF