• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.102-106
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• 2003

This paper describes novel low-power high-speed flip-flop called dual edge-triggered NAND keeper flip-flop (DETNKFF). The flip-flop achieves substantial power reduction by incorporating dual edge-triggered operation and by eliminating redundant transitions. It also minimizes the data-to-output latency by reducing the height of transistor stack on the critical path. Moreover, DETNKFF allows negative setup time to provide useful attribute of soft clock edge by incorporating the pulse-triggered operation. The proposed flip-flop was designed using a $0.35{\;}\mutextrm{m}$ CMOS technology. The simulation results indicate that, for the typical input switching activity of 0.3, DETNKFF reduces power consumption by as much as 21 %. Latency is also improved by about 6 % as compared to the conventional flip-flop. The improvement of power-delay product is also as much as 25 %.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.7
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• pp.816-821
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• 2019

A counter-type time-to-digital converter was designed using a dual edge T flip-flop. The time-to-digital converter was designed with a $0.18{\mu}m$ CMOS process at a supply voltage of 1.5 volts. In a typical time-to-digital converter, when the period of the clock is T, a conversion error corresponding to the period of the clock occurs due to the asynchronism between the input signal and the clock. However, the clock of the time-to-digital converter proposed in this paper is generated in synchronization with the start signal which is the input signal. As a result, conversion errors that may occur due to asynchronization of the start signal and the clock do not occur. The flip-flops constituting the counters are composed of dual-edge flip-flops operating at the positive and negative edges of the clock to improve the resolution.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.275-278
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• 1999

In this paper, Dual PFD(Phase Frequency Detector) with improved phase locking time is proposed. The proposed PFD consists of positive and negative edge triggered D flip-flop. In order to confirm the characteristics of proposed PFD, HSPICE simulations are performed using a 0.25${\mu}{\textrm}{m}$ CMOS process. As a result of simulations, the proposed PFD has a characteristic of fast phase locking time with dead zone free.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.4
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• pp.43-53
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• 2002

In this paper, a new dynamic D-flip-flop which does not suffer from charge sharing and glitch problems is proposed. And a dual-modulus divide-by-128/129 prescaler has been designed with the proposed D-flip-flops using a 0.6$0.6{\mu}m$ CMOS technology. Eleven-transistor architecture enables it to operate at the higher frequency range and the transistor merging technique contributes to the reduction of power consumption. At 5V supply voltage, the simulated maximum operating frequency and the current consumption of the divide-by-128/129 prescaler are 1.97GHz and 7.453mA, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.1
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• pp.75-82
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• 2000

In this paper, a new low power 16-bit ALU has been designed, fabricated and tested at the transistor level. The designed ALU performs 16 instructions and has a two-stage pipelined architecture. For the reduction of switched capacitance, the ELM adder of the proposed ALU is inactive while the logical operation is performed and P(propagation) block has a dual bus architecture. A new efficient P and G(generation) blocks are also proposed for the above ALU architecture. ELM adder, double-edge triggered register and the combination of logic style are used for low power consumption as well. As a result of simulations, the proposed architecture shows better power efficient than conventional architecture$^{[1,2]}$ as the number of logic operation to be performed is increased over that of arithmetic to logic operation to be performed is 7 to 3, compared to conventional architecture. The proposed ALU was fabricated with 0.6${\mu}m$ single-poly triple-metal CMOS process. As a result of chip test, the maximum operating frequency is 53MHz and power consumption is 33mW at 50MHz, 3.3V.