• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.12-18
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• 2019

The protective double layer polymer coatings on silica optical fibers are realized by wet-on-wet liquid coating process and they play an important role in final quality of mass produced optical fibers. This numerical study aims to analyze the effects of secondary coating die design parameters by employing two dimensional axisymmetric model of coating cup and coating die geometry and computational fluid dynamics simulations which include temperature dependent viscosity of polymer coating liquids and viscous dissipation heating. Under high speed fiber drawing conditions and pressurized coating liquid supply, the effects of converging die angle are investigated in order to appreciate the change of coating liquid flow patterns such as flow recirculation zone near coating die as well as primary and secondary coating layer thicknesses. The auxiliary coating die to converging coating die is also tested and the results find that this concept is advantageous in achieving stable double layer coatings on silica glass fiber.

• Journal of Information Display
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• v.2 no.2
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• pp.45-51
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• 2001

Four types of conjugated polymers, poly(MEHPV-PV), poly(MEHPV-BPV), poly(MEHPV-AV) and poly(PZV-AV) were synthesized by Homer-Emmons reaction using potassium tert-butoxide. The Homer-Emmons reaction gave electroluminescent(EL) copolymers in good yield. Of the EL copolymers synthesized, poly(PZV-AV) containing phenothiazinylene vinylene and anthrylene vinylene as repeat unit exhibited red color in the light emitting diode(LED) which was very close to the NTSC standard red. Besides, double layer LED made with $Alq_3$ electron transport layer exhibited both enhanced emission intensity and efficiency compared to the single layer LED.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.314-316
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• 2008

We examine the surface alignment of liquid crystals (LC's) by a double linearly polarized ultraviolet (LPUV) light expose process. Exposing polarized light induces a surface anisotropy to polyimide (PI) layer surfaces and hence determines the alignment direction. LPUV exposes with angular difference of $45^{\circ}$ between two polarization directions make LC director change.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.838-841
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• 2006

Orientational alignment patterns proved that they are very useful for realizing diverse properties of liquid crystals. Here we tried to produce the patterns combining interfered laser light and double irradiations. A photo-isomerizable polymer doped with azo dye, which induce uniform liquid crystal alignment to the uniform laser irradiation, was used as the alignment layer. Double irradiations into two orthogonal directions brought the orientation patterns similar to the checkerboard. It indicates the possibility of bistability on those patterns.

• Journal of Information Display
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• v.8 no.1
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• pp.6-9
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• 2007

Orientational alignment patterns have been proven to be that they are very useful for realizing diverse properties of liquid crystals. Here we produced the patterns combining interfered laser beams. A photo-isomerizable polymer including azo unit, which induces nematic liquid crystal alignment to the polarized laser light, was used as the alignment to layer. Double irradiations into two orthogonal directions brought the orientation patterns similar to the checkerboard. It indicates the possibility of bistability on those patterns.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.943-949
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• 2000

In this paper, the single and double heterostructure organic light-emitting devices(OLEDs) were fabricated. The single heterostructure OLED(TYPE 1) is consisted of TPD as a HTL(hole transfer layer) and Alq$_3$as an EML(emitting layer). The double heterostructure OLED(TYPE 2) is consisted of TPD as a HTL, Alq$_3$as an EML and PBD as an ETL(electron transfer layer). The another double heterostructure OLED(TYPE 3) is consisted of TPD as a HTL, PBD as an EML and Alq$_3$as an ETL. We obtained a strong green emission device with maximum EL emission wavelength 500nm in TYPE 3. When the applied voltage was 12V, the emission luminescence was 120.9cd/㎡. The chromaticity index of TYPE 3 was x=0.29, y=0.50. In the characteristic plot of current-voltage, TYPE 3 device was turned on at 6.9V. This voltage was a fairly low turn-on voltage. TYPE 1 and 2 device were turned on at 10V and 8.9V respectively. These types showed no good properties over that of TYPE 3.

• Journal of Information Display
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• v.9 no.2
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• pp.5-8
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• 2008

Bottom gate thin film transistors (TFTs) with microcrystalline and amorphous Si (a-Si) double active layers (DAL) were fabricated. Since the process of DAL TFTs can use that of conventional a-Si TFTs, these DAL TFT process has advantages, such as low cost, large substrate, and mass production capacity. In order to analyze the degradation characteristics in saturation region for driving TFTs of active matrix organic light emitting diode, three different dynamic stresses were applied to DAL TFTs and a-Si TFTs. The threshold voltage shift of DAL TFTs and a-Si TFTs during 10,000 second stress is 0.3V and 2V, respectively. DAL TFTs were more reliable than a-Si TFTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.589-593
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• 2014

AlNO multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. $Al_2O_3$/AlNO(LMVF)/AlNO(HMVF)/Al/substrate of 4 multi-layer has been prepared in an Ar and ($N_2+O_2$) gas mixture, and $Al_2O_3$ of top layer is anti-reflection layer on double AlNO(LMVF)/AlNO(HMVF) layers and Al metal of infrared reflection layer. In this study, the roughness and surface properties of AlNO thin films were estimated by field emission scanning electron microscopy(FE-SEM). The grain size of AlNO thin films increased with increasing sputtering power. The composition of thin films has been systematically investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The absorptance of AlNO films shows the increasing trend with swelling ($N_2+O_2$) gas mixture in HMVF and LMVF deposition. The excellent optical performance showed above 98% of absorptance in visible wavelength region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.820-824
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• 2014

TiNOx multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. 4 multi-layers of $TiO_2$/TiNOx(LMVF)/TiNOx(HMVF)/Ti/substrate have been prepared with ratio of Ar and ($N_2+O_2$) gas mixture. $TiO_2$ of top layer is anti-reflection layer on double TiNOx(LMVF)/TiNOx(HMVF) layers and Ti metal of infrared reflection layer. In this study, the crystallinity and surface properties of TiNOx thin films were estimated by X-ray diffraction(XRD) and field emission scanning electron microscopy(FE-SEM), respectively. The grain size of TiNOx thin films shows to increase with increasing sputtering power. The composition of thin films has been investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The TiNOx multi-layer films show the excellent optical performance beyond 9% of reflectance in those ranges wavelength.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.125-126
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• 2000

We report the use of fluorene based copolymers containing quinoline(POF66, PIF66) and pyridine(PFPV) units as electron transporting polymers for multi-layered LEDs. Double-layer device structure combining PIF66 as electron-transporting layer with the emissive MEHPPV showed a maximum quantum efficiency of 0.03%, which is 30 fold increased compared with ITO/MEHPPV/Al single-layer device. PFPV layer increased the quantum efficiency up to 0.1% in the device structure of ITO/(P-3:PVK)/PFPV/Al. The ETL with the electron deficient moiety improved the LED performance by the characteristics of electron transporting as well as hole blocking between emissive layer and metal cathode.