• JSTS:Journal of Semiconductor Technology and Science
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• 제10권2호
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• pp.130-133
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• 2010

This paper presents a study of the influence of variation of counter doping thickness on short channel effect in symmetric double-gate (DG) nano MOSFETs. Short channel effects are estimated from the computed values of current-voltage (I-V) characteristics. Two dimensional Quantum transport equations and Poisson equations are used to compute DG MOSFET characteristics. We found that the transconductance ($g_m$) and the drain conductance ($g_d$) increase with an increase in p-type counter-doping thickness ($T_c$). Very high value of transconductance ($g_m=38\;mS/{\mu}m$) is observed at 2.2 nm channel thickness. We have established that the threshold voltage of DG MOSFETs can be tuned by selecting the thickness of counter-doping in such device.

• 대한전기학회논문지
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• 제35권7호
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• pp.278-284
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• 1986

Double-diffused metal oxide power semiconductor field effect transistors are used extensively in recent years in various circuit applications. The temperature variation of the drain current at a fixed bias shows both positive and negative resistance characteristics depending on the gate threshold voltage and gate-to source bias votage. In this paper, the decision method of the gate crossover voltage by the temperature variation and a new method to determine the gate threshold voltage graphecally are presented.

• Communications for Statistical Applications and Methods
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• 제13권3호
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• pp.745-754
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• 2006

It has been shown that LAD estimates are more efficient than LS estimates when the error distribution is double exponential in AR(1) model. In order to explore the performance of LAD estimates one can use bootstrap approaches. In this paper we consider the efficiencies of bootstrap methods when we apply LAD estimates with highly variable data. Monte Carlo simulation results are given for comparing generalized bootstrap, stationary bootstrap and threshold bootstrap methods.

• 대한수학회보
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• 제43권4호
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• pp.813-820
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• 2006

We consider a MAR model with ARCH type conditional heteroscedasticity. MAR-ARCH model can be derived as a smoothed version of the double threshold AR-ARCH model by adding a random error to the threshold parameters. Easy to check sufficient conditions for strict stationarity, ${\beta}-mixing$ property and existence of moments of the model are given via Markovian representation technique.

• 대한전자공학회논문지SD
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• 제46권9호
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• pp.1-6
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• 2009

본 논문에서는 음극 및 양극으로 동시에 열 방출을 수행할 수 있는 이중 방열 구조의 Gunn 다이오드를 제작하고 음극 방열 구조를 갖는 Gunn 다이오드와 그 특성 차이를 비교하였다. 제작된 다이오드의 DC 특성 측정 결과, 단일 방열 구조의 경우에는 3 V의 문턱전압과 744 mA의 최대 전류 및 4.8 V의 항복 전압 특성을 나타내었고, 이중 방열 구조 다이오드는 2.5 V의 문턱전압, 778 mA의 최대 전류 및 5 V 이상의 항복전압 특성을 나타내었다.

• Journal of Oral Medicine and Pain
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• 제26권4호
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• pp.309-318
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• 2001

The purposes of the study were (1) to evaluate the olfactory identification ability in those who have bad breath, (2) to determine the olfactory detection threshold for methyl mercaptan in normal subjects and those who have bad breath, and (3) to evaluate the effect of oral hygiene care on the olfactory detection threshold for methyl mercaptan. Sixteen male subjects with bad breath (male odor group), 9 male subjects without bad breath (male non-odor group), and 10 female subjects without bad breath (female non-odor group) were included for the study. Olfactory identification ability was assessed by administrating the Cross-Cultural Smell Identification Test (CC-SIT), and the olfactory detection threshold for methyl mercaptan was measured by two-alternative forced-choice single-staircase detection threshold procedure in a double-blinded condition. The geometric mean of the last four staircase reversal points of a total of seven reversals is used as the threshold. For the male odor group, after 1 month of intensive oral hygiene care for reducing oral volatile sulfur compounds (VSC) concentration, the olfactory detection threshold for methyl mercaptan was measured again and compared to the initial value. The ANOVA was used to test the group difference of olfactory threshold and olfactory identification ability and the paired t-test was used to test the difference of olfactory threshold between before and after reduction of oral VSC in male odor group. The results were as follows : 1. There was no significant difference in olfactory identification ability among those who have bad breath and normal male or female subjects. 2. The olfactory detection threshold for methyl mercaptan was about 8.4 ppb in normal male and female. 3. There was a tendency that male subjects with bad breath showed a higher olfactory detection threshold for methyl mercaptan when compared to those of no bad breath. 4. The olfactory detection threshold for methyl mercaptan returned to a normal level after 1 month of intensive oral hygiene care for reducing oral VSC.

• Journal of Oral Medicine and Pain
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• 제23권1호
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• pp.1-9
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• 1998

The aim of the study was to evaluate the anesthetic Effecs of pulsed Nd:YAG laser irradiation to the oral mucosa and the teeth. Twenty subjects who didn't have a history of significant systemic or current oral disease were included in this study. All the subjects were divided randomly into the experimental group and the control group with 10 for each group. Pain thresholds were measured with Weighted Needle Pinprick Sensory Threshold Test for the mucosal surface of lower lip and with electric pulp test for the upper right central incisor respectively, before and immediately after pulsed Nd:YAG laser irradiation in the condition of 2 watt, 20pps for 2 minute at 10mm distance. The experiment was double-blinded clinical trial. The results were as follows : 1. The mean pain threshold of the mucosal surface of lower lip for Weighted Needle Pinprick Sensory Threshold Test was 2.94(1.00g for the contral group respectively, and there was no statistical difference between two groups. 2. The mean pain threshold of the mucosal surface of lower lip was significantly increased immediately after pulsed Nd:YAG laser irradiation. 3. The mean pain threshold of the upper right central incisor for eledtric pulp test was 34.50(4.97V in the experimental group and 34.00(13.08V in the control group respectively, and there was no statistical difference between two groups. 4. The mean pain threshold of the upper right central incisor was significantly increased immediately after pulsed Nd:YAG laser irradiation.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 ITC-CSCC -2
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• pp.910-913
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• 2000

In this paper, we propose an improved SBIHT algorithm based on double significance criteria. According to the defined relationship between a threshold and a boundary rate-distortion slope, we choose significant coefficients and trees. The selected significant coefficients and trees are quantized and entropy-coded. Experimental results demonstrate that the boundary rate-distortion slope is well adapted and the proposed algorithm is quite competitive to and often outperforms the SPIHT algorithm.

• Journal of Information Display
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• 제5권3호
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• pp.1-7
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• 2004

We developed a novel frame interpolation method to interpolate a frame between two successive original frames. Using this method, we are able to apply a double-rate driving method instead of an impulse driving method where a black frame is inserted between two successive original frames. The double-rate driving method enables amelioration of the motion blur of LCDs caused by the characteristics of human vision without reducing the luminosity of the whole screen. The image quality of the double-rate driving method was also found to be better than that of an impulse driving method using our motion picture simulator and an actual panel. Our initial model of our frame interpolation method consists of motion estimation with a maximum matching pixel count estimation function, an area segmentation technique, and motion compensation with variable segmentation threshold. Although salt and pepper noise remained in a portion of an object mainly due to inaccuracy of motion estimation, we verified the validity of our method and the possibility of improvement in hold-type motion blurring.

• 한국정보통신학회논문지
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• 제14권10호
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• pp.2305-2309
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• 2010

본 연구에서는 상단게이트와 하단게이트를 갖는 더블게이트 MOSFET에서 채널길이와 채널두께의 비에 따른 문턱전압의 변화에 대하여 분석하였다. 더블게이트 MOSFET는 두개의 게이트를 가지고 있기 때문에 전류제어 능력이 기존 MOSFET의 두배에 가깝고 나노소자에서 단채널효과를 감소시킬 수 있다는 장점이 있다. MOSFET에서 채널길이와 채널두께는 소자의 크기를 결정하며 단채널효과에 커다란 영향을 미치고 있다. 채널길이가 짧아지면 서 채널두께와의 비에 따라 단채널효과 중 문턱전압의 변화가 크게 영향을 받고 있다. 그러므로 이 연구에서는 DGMOSFET에서 채널길이와 채널두께의 비를 변화시키면서 문턱전압의 변화와 드레인 유기장벽감소현상을 분석할 것이다.