• Applied Chemistry for Engineering
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• v.7 no.2
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• pp.280-288
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• 1996

In the ozone evolution using $PbO_2$, which was electrodeposited on Ti plate at various conditions in electrolyte, the effects of lead dioxide structure on the current efficiency and surface structure changes of lead dioxide were investigated. Also the effects of oxygen transfer reaction on the ozone evolution were investigated by means of a $PbO_2$ electrodeposited on the platinum rotating disk electrode. In order to develope an electrode for ozone evolution, durability of lead dioxide and optimum current density were investigated. At the electrodeposited lead dioxide with the larger grain size and higher crystallinity, the efficiency for ozone evolution was higher. Optimum current density to electrodeposite lead dioxide with large grain size and high crystalinity was $50mA/cm^2$. Lead dioxide deposited in the presence of glycerin showed the best advantage of ozone evolution. Also lead dioxide electrodeposited at less than $10mA/cm^2$ or at more than $100mA/cm^2$ has poor performance of ozone evolution and poor adhesive strength to substrate. In the beginning of ozone evolution, surface structure of lead dioxide was changed and this change resulted in good effects on ozone evolution. Lead dioxide doped with other elements was favorable not to ozone evolution but to oxygen evolution, so it is speculated that ozone evolution has not intermediate stage of oxygen evolution and occurs competitively with oxygen evolution. When ozone was evolved at $0.7{\sim}0.8A/cm^2$, the current efficiency was highest.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.193-193
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• 2012

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.29-37
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• 1999

In this study, we have prepared PLT thin films having various La concentrations by using sol-gel method and studied on the effect of La concentration on the electrical properties of PLT thin films. As the La concentration increases from 5mol% to 28mol%, the dielectric constant at 10kHz increases from 428 to 761, while the loss tangent decreases from 0.063 to 0.024. Also, the leakage current density at 150kV/cm has a tendency to decrease from 6.96${\mu}A/cm^2$ to 0.79${\mu}A/cm^2$. In the result of hysteresis loops of PLT thin films, the remanent polariation and the coercive field decrease from 9.55${\mu}C/cm^2$ to 1.10${\mu}C/cm^2$ and from 46.4kV/cm to 13.7kV/cm, respectively. With the result of the fatigue test on the PLT thin films, we have found that the fatigue properties are improved remarkably as the La concentration increases from 5 mol% to 28mol%. In particular, the PLT28) has paraelectric phase and its charge storage clensity and leakage current density at 5V are 134fC/${\mu}cm^2$ and 1.01${\mu}A/cm^2$, respectively. The remanent polarization and coercive field of the PLT(10) film are 6.96${\mu}C/cm^2$ and 40.2kV/cm, respectively. After applying of $10^9$ square pulses with ${\pm}5V$, the remanent polarilzation of the PLT(10) film decreases about 20% from the initial state. In the results, we conclude that the 10mol% and the 28mol% La doped PLT thin films are very suitable for the capacitor dielectrics of new generation of DRAM and NVFRAM respecitively.