• Title/Summary/Keyword: domain-wall motion

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A Modelling of magnetization reversal characteristics in magneto-optic memory system (광자기 기억장치에서의 자화반전 특성 모델링)

  • 한은실;이광형;조순철
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.19 no.10
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    • pp.1849-1860
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    • 1994
  • Domain wall dynamics in thin film of amorphous Rare Earth-Transistion Metal alloys were investigated using numerical integration of the Landau-Lifshitz-Gilbert equation. The thin film was divided into a two-dimensional square lattice ($30\times30$) of dipoles. Nearest-neighbor exchange interaction magnetic anisotropy, applied magnetic field, and demagnetiing field of interacting anisotropy, applied magnetic field, and demagnetizing field of interacting dipoles were considered. It was assumed that the film had perfect uniaxial anisotropy in the perpendicular direction and the magnetization reversal existed in the film. The time of domain wall creation and the thickness of the wall were investigated. Also the motion of domain walls under an applied field was considered. Simulation results showed that the time of domain wall creation was decreased significantly and the average velocity of domain wall was increased somewhat when the demagnetizing field was considered.

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Activation Volumes of Wall-Motion and Nucleation Processes in Co/Pd Multilayers

  • Choe, Sug-Bong;Shin, Sung-Chul
    • Journal of Magnetics
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    • v.5 no.2
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    • pp.35-39
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    • 2000
  • The correlation between the activation volumes of wall-motion and nucleation processes in Co/Pd multilayers has been investigated. Each activation volume was estimated from the field dependence of the wall-motion speed and the nucleation rate, respectively, based on time-resolved domain patterns grabbed by a MOKE microscope system. Both the activation volumes are changed in the same manner around $0.2\sim1.1\times10^{-17}cm^3$ with changes in the multilayered structure. Interestingly, the correlation between the activation volumes is sensitive to the multilayered structure; the wall-motion activation volume is smaller than the nucleation activation volume for a sample having a smaller number of repeats and a thinner Co-layer thickness, and vice versa. The correlation is closely related with the contrasting reversal modes; the process having the smaller activation volume dominates.

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DOMAIN WALL DYNAMICS AND EQUIVALENT CIRCUTTS IN FERROMAGNETIC MATERIALS

  • Valinzuela, R.
    • Proceedings of the Materials Research Society of Korea Conference
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    • 1992.05a
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    • pp.8-8
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    • 1992
  • The study of magnetic properties of ferro and ferri-magnetic materials has shown that, due to their different time constants, magnetisation mechanisms (domain wall displacement, spin rotation and wall bulging) can be separated by using the complex permeability formalisms, they exhibit characteristic features in $\mu$′ versus $\mu$" plots. In many cases. the elements (inductances, resistances and capacitances) of the equivalent circuit representing the friquency behaviour, can also be associated with physical parameters of the sample [1-3]. In a different approach, domain wall dynamics can be represented by a motion equation with mass, damping and restoring force terms [4]. In this paper, we show that these two approaches are consistent and how they are related.

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Energy barrier of nanomagnet with perpendicular magnetic anisotropy

  • Song, Kyungmi;Lee, Kyung-Jin
    • Proceedings of the Korean Magnestics Society Conference
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    • 2014.05a
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    • pp.120-121
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    • 2014
  • We investigate the field-dependence of energy barrier for various cell diameters and two type of geometry through the NEB method. We find that the energy barrier can depend strongly on the cell size when the switching is governed by the domain wall motion. Moreover we also examine the cell size dependence of energy barrier for two type of cell geometry. In the presentation, we will discuss the effect of domain wall formation and more various cell size on the energy barrier in detail.

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Switching current density for spin transfer torque magnetic random access memory with Dzaloshinskii-Moriya Interaction

  • Song, Kyungmi;Lee, Kyung-Jin
    • Proceedings of the Korean Magnestics Society Conference
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    • 2015.05a
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    • pp.78-79
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    • 2015
  • We investigate the switching current for various cell diameters and DM interaction. We find that the current density for switching can depend strongly on the cell size when the switching is governed by the domain wall motion. Moreover the switching current density is also strongly influenced by DM interaction. In the presentation, we will discuss the effect of domain wall formation and more various DMI constant on the switching current desity in detail.

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