• Title/Summary/Keyword: distributed-feedback lasers

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Application of DFB Diode Laser Sensor to Reacting Flow (I) - Estimation and Application to Laminar Flames -

  • Park, Gyung-Min;Masashi Katsuki;Kim, Duck-Jool
    • Journal of Mechanical Science and Technology
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    • v.16 no.11
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    • pp.1550-1557
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    • 2002
  • Diode laser sensor for measuring gas temperature and species concentration in combustion chamber was developed using 2.0 tim distributed feed back lasers. To evaluate the measurement sensitivity of diode laser sensor system, CO2 survey spectra near 2.0 Um were measured and compared with the calculated one. This diode laser absorption sensor was applied to measure gas temperatures in a premixed flat flame of CH$_4$-air mixture. Experimental results were in good agreement with the values by an R-type thermocouple within 6.12%. In addition, successful demonstration of measurement of gas temperature and species concentration in a soot flame showed the promising possibility of diode laser absorption sensors for practical combustion system with non-intrusive method.

Circuit Model for the Effect of Nonradiative Recombination in a High-Speed Distributed-Feedback Laser

  • Nie, Bowen;Chi, Zhijuan;Ding, Qing-an;Li, Xiang;Liu, Changqing;Wang, Xiaojuan;Zhang, Lijun;Song, Juan;Li, Chaofan
    • Current Optics and Photonics
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    • v.4 no.5
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    • pp.434-440
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    • 2020
  • Based on single-mode rate equations, we present an improved equivalent-circuit model for distributed-feedback (DFB) lasers that accounts for the effects of parasitic parameters and nonradiative recombination. This equivalent-circuit model is composed of a parasitic circuit, an electrical circuit, an optical circuit, and a phase circuit, modeling the circuit equations transformed from the rate equations. The validity of the proposed circuit model is verified by comparing simulation results to measured results. The results show that the slope efficiency and threshold current of the model are 0.22 W/A and 13 mA respectively. It is also shown that increasing bias current results in the increase of the relaxation-oscillation frequency. Moreover, we show that the larger the bias current, the lower the frequency chirp, increasing the possibility of extending the transmission distance of an optical-fiber communication system. The results indicate that the proposed circuit model can accurately predict a DFB laser's static and dynamic characteristics.

Static and Dynamic Behavior of Tunable DFB Laser based on Modal Transmission-Line Theory (전송선로 이론에 기초한 파장 변환 DFB 레이저의 정적 및 동적 작용)

  • Ho, Kwang-Chun
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.14 no.2
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    • pp.147-152
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    • 2014
  • A longitudinal modal transmission-line theory(L-MTLT) to analyze the static and dynamic behavior of two-section distributed feedback (DFB) lasers is used. The characteristic impedance and equivalent propagation constant of DFB structure with active layer are derived from L-MTLT. A two-section DFB laser is analogous to a transmission-line network, in which each section is described by transmission-line block corresponding to the equivalent factors. The longitudinal resonant condition of DFB laser based on equivalent transmission-line network is used to reformulate the rate equations so that static and dynamic behavior of two-section DFB lasers with active layer is demonstrated and analyzed accurately.

A Study on the Electric Circuit Model for the Direct FM Characteristics of DFB Semiconductor Lasers (DFB 반도체 레이저의 직접 주파수변조(DFM) 특성의 전기적 회로모델에 관한 연구)

  • 정순구;전광석;홍완희
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.19 no.12
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    • pp.2426-2438
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    • 1994
  • In this paper we present for the first time the electric circuit model for direct frequrncy modulation(FM) response of the conventional distributed-feedback(DFB) semiconductor laser diodes. Especially, in this paper, the proposed model includes not only the carrier density modulation effect, but also the temperature modulation effect determining the DFM characteristics of DFB characteristics of DFB semiconductor lasers. The DFM response due to injection current modulation was obtained as a function of modulation frequency from DC to a few GHz. The circuit model representing the temperature modulation effect is obtained from the structure of DFB LD chip and the simulation results are compared with the published experimental results. The circuit model representing the temperature modulation effect is obtained from the structure of DFB LD chip and the simulation results are compared with the published experimental results. The circuit model representing carrier density modulation effect is obtained from the rate equations of DFB lasers and the simulation results are compared with the results that were obtained by the conventional numerical analysis approach. The results showed good agreements.

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Bidirectional Hybrid DWDM-PON for HDTV/Gigabit Ethernet/CATV Applications

  • Lu, Hai-Han;Tsai, Wen-Shing;Chien, Tzu-Shen;Chen, Shih-Hung;Chi, Yu-Chieh;Liao, Che-Wei
    • ETRI Journal
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    • v.29 no.2
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    • pp.162-168
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    • 2007
  • A new scheme for bi-directional HDTV/Gigabit Ethernet/CATV transmission over a hybrid dense-wavelength-division-multiplexing passive optical network (DWDM-PON) is proposed and demonstrated. It is based on injection-locked vertical-cavity surface-emitting lasers and distributed-feedback laser diodes as transmitters. Services with 129 HDTV channels, a 1.25 Gbps Gigabit Ethernet connection, and 77 CATV channels are successfully demonstrated over 40 km single-mode fiber links. Good performance of bit error rate, carrier-to-noise ratio, composite second order, and composite triple beat is achieved in our proposed bidirectional DWDM-PON.

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Quantum Nanostructure of InGaAs on Submicron Gratings by Constant Growth Technique

  • Son, Chang-Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.12
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    • pp.1027-1031
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    • 2001
  • A new constant growth technique to conserve an initial grating height of V-groove AlGaAs/InGaAs quantum nanostructures above 1.0 $\mu\textrm{m}$ thickness has been successfully embodied on submicron gratings using low pressure metalorganic chemical vapor deposition. A GaAs buffer prior to an AlGaAs barrier layer on submicron gratings plays an important role in overcoming mass transport effects and improving the uniformity of gratings. Transmission electron microscopy (TEM) image shows that high-density V-groove InGaAs quantum wires (QWRs) are well confined at the bottom of gratings. The photoluminescence (PL) peak of the InGaAs QWRs is observed in the temperature range from 10 to 280 K with a relatively narrow full width at half maximum less than 40 meV at room temperature PL. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystal.

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Widely Tunable 1.55-${\mu}m$ Detuned Dual-Mode Laser Diode for Compact Continuous-Wave THz Emitter

  • Kim, Nam-Je;Leem, Young-Ahn;Ko, Hyun-Sung;Jeon, Min-Yong;Lee, Chul-Wook;Han, Sang-Pil;Lee, Dong-Hun;Park, Kyung-Hyun
    • ETRI Journal
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    • v.33 no.5
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    • pp.810-813
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    • 2011
  • We report the use of a widely tunable detuned dual-mode laser diode (DML) as a compact and portable continuous-wave THz emitter. The wavelength difference between the two lasing modes of this DML can be tuned from 2.4 nm to 9.3 nm by using integrated microheaters. The power difference between these modes is less than 1 dB, and the side-mode suppression ratio is greater than 30 dB over the entire tuning range.

Impact of the Spectral Linewidth of a Pseudorandom Binary Sequence (PRBS)-Modulated Laser on Stimulated Brillouin Scattering and Beam Quality

  • Aeri Jung;Sanggwon Song;Kwang Hyun Lee;Jung Hwan Lee;Kyunghwan Oh
    • Current Optics and Photonics
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    • v.7 no.6
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    • pp.665-672
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    • 2023
  • This study focuses on investigating the impact of the spectral linewidth of a seed laser in a master-oscillator power amplifier (MOPA) configuration on stimulated Brillouin scattering and the beam quality of the output diffracted by a grating. To conduct the study, a distributed feedback (DFB) laser is modulated in a pseudorandom binary sequence (PRBS) and amplified by a two-stage Yb-doped fiber amplifier to achieve an output power of over 1 kW. The spectral linewidth of the seed laser is systematically varied from 1 to 12 GHz in the frequency domain by varying the PRBS modulation parameters. The experimental results reveal a tradeoff between suppressing stimulated Brillouin scattering and enhancing beam quality with increased spectral linewidth. Therefore, the study provides valuable insights into optimizing spectral beam combining to achieve high beam quality and scalable power upgrade in fiber lasers.

Simulation and Examination for Beam Profile of DFB Laser with an Anti-reflection Coated Mirror (무반사 면을 갖는 DFB 레이저의 빔 분포 시뮬레이션과 검정)

  • Kwon, Kee-Young;Ki, Jang-Geun
    • Journal of Software Assessment and Valuation
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    • v.16 no.1
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    • pp.55-63
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    • 2020
  • Lasers for optical broadband communication systems should have excellent frequency selectivity and modal stability. DFB lasers have low lasing frequency shift during high speed current modulation. In this paper, when a refractive index grating and a gain grating are simultaneously present in a DFB laser having a wavelength of 1.55 ㎛, the dielectric film is coated so that reflection does not occur on the right mirror surface, so that ρr=0. For the first mode, which requires a minimum gain at the threshold, the beam distribution of the oscillation mode in the longitudinal direction and the radiated power ratio Pl/Pr were analyzed and compared for the cases of the phase of ρl=π and π/2. If the phase of ρl=π, in order to obtain a low threshold current and high frequency stability, κL should be greater than 8. In the case of the phase of ρl=π/2, for low threshold current, κL is necessary to be 1.0, where the oscillation frequency coincides with the lattice frequency. DFB lasers with an anti-reflection coated mirror have excellent mode selectivity than 1.55um DFB lasers with two mirror facets

SOA-Integrated Dual-Mode Laser and PIN-Photodiode for Compact CW Terahertz System

  • Lee, Eui Su;Kim, Namje;Han, Sang-Pil;Lee, Donghun;Lee, Won-Hui;Moon, Kiwon;Lee, Il-Min;Shin, Jun-Hwan;Park, Kyung Hyun
    • ETRI Journal
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    • v.38 no.4
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    • pp.665-674
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    • 2016
  • We designed and fabricated a semiconductor optical amplifier-integrated dual-mode laser (SOA-DML) as a compact and widely tunable continuous-wave terahertz (CW THz) beat source, and a pin-photodiode (pin-PD) integrated with a log-periodic planar antenna as a CW THz emitter. The SOA-DML chip consists of two distributed feedback lasers, a phase section for a tunable beat source, an amplifier, and a tapered spot-size converter for high output power and fiber-coupling efficiency. The SOA-DML module exhibits an output power of more than 15 dBm and clear four-wave mixing throughout the entire tuning range. Using integrated micro-heaters, we were able to tune the optical beat frequency from 380 GHz to 1,120 GHz. In addition, the effect of benzocyclobutene polymer in the antenna design of a pin-PD was considered. Furthermore, a dual active photodiode (PD) for high output power was designed, resulting in a 1.7-fold increase in efficiency compared with a single active PD at 220 GHz. Finally, herein we successfully show the feasibility of the CW THz system by demonstrating THz frequency-domain spectroscopy of an ${\alpha}$-lactose pellet using the modularized SOA-DML and a PD emitter.