• 전기화학회지
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• 제14권3호
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• pp.145-151
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• 2011

ZnSe는 가시광선 영역에서 넓은 밴드갭을 가지고 있는 II-VI족 화합물 반도체 소자로서 레이저 다이오드, 디스플레이 그리고 태양전지와 같은 다양한 응용분야에 적용되고 있다. 본 연구에서는 전기화학적 전착방법을 이용하여 ITO 전극상에 ZnSe 박막을 합성하여, XRD와 SEM으로 ZnSe 결정의 합성과 zinc blende 구조의 형태를 관측하였고, UV 분광기를 활용하여 밴드갭을 측정한 결과 2.76 eV이었다. 또한, 분자동역학에서 활용되는 밀도범함수 이론 (DFT, Density Functional Theory)을 도입하여 ZnSe 결정에 대한 밴드 구조의 해석을 수행하였다. Zinc blende구조를 갖는 ZnSe 결정에 대하여 LDA (Local Density Approximation), PBE (Perdew Burke Ernzerhof), 그리고 B3LYP (Becke, 3-parameter, Lee-Yang-Parr) 범함수를 이용하여 밴드구조와 상태밀도 (Density of State)를 모사하였다. 각각의 경우에 대해 에너지 밴드갭을 구한 결과, B3LYP 범함수로 해석한 경우에 실험치와 근사치인 2.65 eV의 밴드갭을 보여주었다.

• Journal of Microbiology and Biotechnology
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• 제25권1호
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• pp.33-43
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• 2015

GAM-1 and GAM-2, two themostable glucoamylases from Aspergillus niger B-30, possess different molecular masses, glycosylation, and thermal stability. In the present study, the effects of additives on the thermal inactivation of GAM-1 and GAM-2 were investigated. The half-lives of GAM-1 and GAM-2 at 70℃ were 45 and 216 min, respectively. Data obtained from fluorescence spectroscopy, circular dichroism spectroscopy, UV absorption spectroscopy, and dynamic light scattering demonstrated that during the thermal inactivation progress, combined with the loss of the helical structure and a majority of the tertiary structure, tryptophan residues were partially exposed and further led to glucoamylases aggregating. The thermal stability of GAM-1 and GAM-2 was largely improved in the presence of sorbitol and trehalose. Results from spectroscopy and Native-PAGE confirmed that sorbitol and trehalose maintained the native state of glucoamylases and prevented their thermal aggregation. The loss of hydrophobic bonding and helical structure was responsible for the decrease of glucoamylase activity. Additionally, sorbitol and trehalose significantly increased the substrate affinity and catalytic efficiency of the two glucoamylases. Our results display an insight into the thermal inactivation of glucoamylases and provide an important base for industrial applications of the thermally stable glucoamylases.

• 한국통신학회논문지
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• 제24권12A호
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• pp.2002-2007
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• 1999

본 논문에서는 유리기판 위에 고상결정화(SPC)로 제작된 n-채널 다결정 박막 트랜지스터(poly-Si TFT's)에 대해 전류-전압 특성, 이동도, 누설전류, 문턱전압, 그리고 부임계 기울기 등과 같은 전기적 특성을 측정함으로서 대면적, 고밀도 TFT-LCD에의 적용 가능성을 조사하였다. 채널 길이가 각각 2, 10, 25$\mu\textrm{m}$로 제작된 n-채널 poly-Si TFT에서, 전계 효과 이동도는 각각 11, 125, 116 $\textrm{cm}^2$/V-s이었으며, 누설전류는 각각 0.6, 0.1, 0.02 pA/$\mu\textrm{m}$로 나타났다. 또한 낮은 문턱전압과 q임계 기울기 그리고 양호한 ON-OFF ratio이 나타났다. 따라서, SPC로 제작된 poly-Si TFT는 대형유리기판에 디스플레이 패널과 구동시스템을 동시에 집적하는 대면적, 고밀도 TFT-LCD에 적용 가능한 것으로 판단된다.

• 공업화학
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• 제21권5호
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• pp.564-569
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• 2010

박막 및 디스플레이 분야에서는 광학 부품소재의 우수한 광 투과성과 투명성을 요구하는 수요가 증가함에 따라 우수한 반사방지 특성의 부여에 대하여 관심이 집중되고 있는 실정이다. 본 연구에서는 반사방지 기능을 부여하기 위하여 졸-겔법에 의한 수열합성법을 통하여 기저 물질 표면에 산화알루미늄을 나노 크기 꽃 형태의 프레임 구조를 가진 단일 산화물층을 형성시키고자 하였다. 코팅 층 시편의 특성은 UV-Vis 분광기, FT-IR 분광기, XRD 및 FE-SEM을 이용하여 분석하였다. 알루미나 졸이 코팅된 시편들의 모폴로지는 수열합성의 온도와 시간 및 초음파 제공에 의해 조절되도록 하였다. 꽃 형태의 나노 프레임 구조 형태로 구성된 코팅 층에서 높은 광투과율과 반사방지특성이 발현되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.251-251
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• 2012

A lot of studies are undergoing on the magneto-optical (MO) properties of patterned magnetic systems for the reason that they have potential application to information technology such as ultrahigh-speed computing. Moreover, they can be considered as the future candidates for high-density MO storage devices. Not only the technical aspects, but there have been also tremendous interests in studying their properties related to the fundamental physics. The MO Kerr-rotation effects (both in reflected and the diffracted modes) and the magnetic force microscopy (MFM) are very useful techniques to investigate the micromagnetic properties of such periodic structures. Hence, in this study, we report on the MO properties of bilayered Cobalt (Co)/ nickel (Ni) micro-patterned anti-dot arrays. Such a ferromagnetic structure was made by sequentially depositing co (40 nm)/Ni (5 nm) bilayer on a Si substrate. The anti-dot patterning with hole diameter of $1{\mu}m$ was done only on the upper Co layer using photolithography technique, while the Ni underlayer was kept uniform. The longitudinal Kerr rotation (LKR) of the zeroth- and the first-order diffracted beams were measured at an incidence of $30^{\circ}$ by using a photoelastic modulator method. The external magnetic field was applied perpendicularly to the reflected and the diffracted beams using an electromagnet capable of a maximum field of ${\pm}5$ kOe. Significantly, it was observed that the LKR of the first-order diffracted beam is nearly 4 times larger than that of the zeroth-order beam. The simulated results for the hysteresis loops matched qualitatively well with the experimentally obtained ones. In conjunction with the LKR, we also investigated the magnetic-domain structure by using a MFM system, which were analyzed to elucidate the origin of the enhanced MO rotation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.459-459
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• 2012

Recently, the discharge of global warming gases in dry etching process of TFT-LCD display industry is a serious issue because perfluorocarbon compound (PFC) gas causes global warming effects. PFCs including CF4, C2F6, C3F8, CHF3, NF3 and SF6 are widely used as etching and cleaning gases. In particular, the SF6 gas is chemically stable compounds. However, these gases have large global warming potential (GWP100 = 24,900) and lifetime (3,200). In this work, we chose C3F6O gas which has a very low GWP (GWP100 = <100) and lifetime (< 1) as a replacement gas. This study investigated the effects of the gas flow ratio of C3F6O/O2 and process pressure in dual-frequency capacitively coupled plasma (CCP) etcher on global warming effects. Also, we compared global warming effects of C3F6O gas with those of SF6 gas during dry etching of a patterned positive type photo-resist/silicon nitride/glass substrate. The etch rate measurements and emission of by-products were analyzed by scanning electron Microscopy (SEM; HITACI, S-3500H) and Fourier transform infrared spectroscopy (FT-IR; MIDAC, I2000), respectively. Calculation of MMTCE (million metric ton carbon equivalents) based on the emitted by-products were performed during etching by controlling various process parameters. The evaluation procedure and results will be discussed in detail.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.436-436
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• 2011

Recently, spintronic devices with submicron structures are widely investigated to take advantage of their unique micromagnetic properties. In this work, we study the temperature dependence of exchange bias in bilayer anti-dot arrays made by depositing Co (40 nm)/Ni (5 nm) ferromagnetic bilayer on Si substrate to form anti-dot arrays with a diameter $1{\mu}m$. The anti-dot patterning was done only for the upper Co layer, while the Ni underlayer was kept unperforated. The temperature dependences of magnetoresistance (MR) and exchange bias were studied along magnetic easy and hard axes. The in-plane MR measurements were performed using a physical-property measurement system (PPMS ; Quantum Design Inc.) at various temperatures. The standard in-line four-point probe configuration was used for the electrical contacts. As temperature was varied, the MR data were obtained in which in-plane field (H=3 kOe) was applied in the directions along the hard and the easy axes with respect to the lattice plane. The temperature dependences of magnetic anisotropy and exchange bias were also studied along the magnetic easy and hard axes. As temperature decreases, the single peak splits into two peaks. While no exchange bias was observed along the magnetic easy axis, the exchange bias field steadily increased with decreasing temperature along the magnetic hard axis. These results were interpreted in connection with the magnetic anisotropy and the effect of the anti-dots in pinning domain wall motion along the respective direction.

• 한국재료학회지
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• 제5권8호
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• pp.929-935
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• 1995

구동 IC를 유리기판 위의 Al패드 전극에 연결하는 LCD(Liquid Crystal Display) 모듈을 실장하는 Chip On Glass (COG) 기술을 개발하기 위하여 기존에 잘 알려진 기술 가운데 실제로 적용 가능성이 가장 유망한 이방성 도전 접착제 (ACA, Anisotropic Conductive Adhesives)를 사용한 공정에 대하여 조사하였다. ACA 공정은 본딩 부분에 ACA 수지를 균일하게 분포시키는 공정과 자외선을 조사하여 수지를 경화하여 칩을 실장하는 공정의 2단계로 진행하였다. 칩에 가해준 하중은 2-15kg이었고 칩의 예열 온도는 12$0^{\circ}C$이었다. 이방성 도전체는 Au 또는 Ni이 표면 피막 재료로 사용된 것을 사웅하였으며 전도성 입자의 갯수가 500, 1000, 2000, 4000개/$\textrm{mm}^2$이며 크기가 5, 7, 12$\mu\textrm{m}$이었다. ACA 처리의 결과 입자 크기가 5$\mu\textrm{m}$이고 입자 밀도는 4000개/$\textrm{mm}^2$일 경우가 대단히 낮은 접촉 저항 및 가장 안정된 본딩 특성을 나타냈었다.

• Current Photovoltaic Research
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• 제3권3호
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• pp.101-105
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• 2015

ZnO is gathering great interest for large square optoelectrical devices of flat panel display (FHD) and solar cell as a transparent conductive oxide (TCO). Herewith, Mg and IIIA (Al, In) co-doped ZnO films were prepared on SLG substrate using RF magnetron sputtering system. The effect of variation of atomic weight % of Mg and ZnO have been investigated. The atomic weight % Al and In are of 3% and kept constant throughout. The numbers of samples were prepared according to their different contents, which are $M_{3%}AZO_{94%}$, $M_{4%}AZO_{93%}-(MAZO)$ and $M_{3%}IZO_{94%}$, $M_{4%}IZO_{93%}-(MIZO)$ respectively. A RF power of 225 W and working pressure of 6 m Torr was used for the deposition at $300^{\circ}C$. All of the two thin film show good uniformity in field emission scanning electron microscopy image. $M_{3%}AZO_{94%}$ thin film shows overall better performance among the all. The film shows the best lowest resistivity, carrier concentration, mobility and Sheet resistance and is found to be are of $8.16{\times}10^{-4}{\Omega}cm$, $4.372{\times}10^{20}/cm^3$, $17.5cm^2/vs$ and $8.9{\Omega}/sq$ respectively. Also $M_{3%}AZO_{94%}$ thin film shows the relatively high optical band gap energy of 3.7 eV with high transmittance more than 80% in visible region required for the better solar cell performance.

• 한국레이저가공학회지
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• 제17권1호
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• pp.1-6
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• 2014

Indium tin oxide (ITO) is an important transparent conducting oxide (TCO). ITO films have been widely used as transparent electrodes in optoelectronic devices such as organic light-emitting devices (OLED) because of their high electrical conductivity and high transmission in the visible wavelength. Finding ways to control ITO micromachining depth is important role in the fabrication and assembly of display field. This study presented the depth control of ITO patterns on glass substrate using a femtosecond laser and slit. In the proposed approach, a gaussian beam was transformed into a quasi-flat top beam by slit. In addition, pattern of square type shaped by slit were fabricated on the surfaces of ITO films using femtosecond laser pulse irradiation, under 1030nm, single pulse. Using femtosecond laser and slit, we selectively controlled forming depth and removed the ITO thin films with thickness 145nm on glass substrates. In particular, we studied the effect of pulse number on the ablation of ITO. Clean removal of the ITO layer was observed when the 6 pulse number at $2.8TW/cm^2$. Furthermore, the morphologies and fabricated depth were characterized using a optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS).