• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.421-422
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• 2009

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.199-200
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• 2009

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.223-224
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• 2011

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.8-12
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• 2008

For the reduction of fabrication cost and process time of AC plasma display panel (PDP), indium tin oxide (ITO) layer was patterned as bus electrode using Nd:$YVO_4$ laser. In comparison with the chemically wet etched ITO patterns, laser ablated ITO patterns showed the formation of shoulders and ripple-like structures at the edge of the ITO lines. For the reduction of shoulders and ripple-like structures, pulse repetition rate and scan velocity of laser was changed. In addition, we analyzed a discharge characteristic of PDP test panel to observe how the shoulders and ripple-like structures influence on the PDP. Based on experimental results, the pattern etched at the 500 mm/s and 40 kHz was better than any other condition. From this experiment we could see the possibility of the laser direct patterning for the application to the patterning of ITO in AC-PDP.

• Laser Solutions
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• v.3 no.2
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• pp.25-33
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• 2000

One of perspective direction of microfabrication is direct laser writing technology that allows to create metal, semiconductive and dielectric micropatterns on substrate surface. In this work, a two step method, the combination of seed forming process, in which metallic Al seed was selectively generated on AlN ceramic substrate by direct writing technique using a pulsed Nd : YAG laser and subsequent electroless Ni plating on the activated Al seed, was presented. The effects of laser parameters such as pulse energy, scanning speed and pulse frequency on shape of Alseed and conductor line after electroless Ni plating were investigated. The nature of the laser activated surface is analyzed from XPS data. The line width of this metallic Al and Ni is analyzed using SEM. As a results, Al seed line with 24㎛ width and 100㎛ isolated line space is obtained. Finally, laser direct writing can be applied in the field between thin and thick film technique in electronic industry.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.158-158
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• 2011

A wide range of techniques for the direct-printing of functional materials have been developed for the fabrication of micro- and nanoscale structures and devices. Here we report a new direct patterning method, liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sized as small as tens of nanometers over large areas up to 4". LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. The LB-nTM method was applied to the preparation of organic nanowire FETs on flexible substrates.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.39.2-39.2
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• 2011

With the steady increase in the demand for flexible devices, mainly in display panels, researchers have focused on finding a novel material that have excellent electrical properties even when it is bended or stretched, along with superior mechanical and thermal properties. Graphene, a single-layered two-dimensional carbon lattice, has recently attracted tremendous research interest in this respect. However, the limitations in the growing method of graphene, mainly chemical vapor deposition on transition metal catalysts, has posed severe problems in terms of device integration, due to the laborious transfer process that may damage and contaminate the graphene layer. In addition, to lower the overall cost, a fabrication technique that supports low temperature and low vacuum is required, which is the main reason why solution-based process for graphene layer deposition has become the hot issue. Nonetheless, a direct deposition method of large area, few-layered, and uniform graphene layers has not been reported yet, along with a convenient method of patterning them. Here, we report an evaporation-induced technique for directly depositing few layers of graphene nanosheets with excellent uniformity and thickness controllability on any substrate. The printed graphene nanosheets can be patterned into desired shapes and structures, which can be directly applicable as flexible and transparent electrode. To illustrate such potential, the transport properties and resistivity of the deposited graphene layers have been investigated according to their thickness. The induced internal flow of the graphene solution during tis evaporation allows uniform deposition with which its thickness, and thus resistivity can be tuned by controlling the composition ratio of the solute and solvent.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1806-1809
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• 2008

Study that form micro pattern by direct ink jet printing method is getting attention recently. Direct ink jet printing spout fine droplet including nano metal particle by force or air pressure. There is reason which ink jet printing method is profitable especially in a various micro-patterning technology. It can embody patterns directly without complex process such as mask manufacture or screen-printing for existent lithography. In this study, research of a technology that ejects fine droplet form of Pico liter and forms metal micro pattern was carried with inkjet head of piezoelectricity drive system. Droplet established pattern while ejecting consecutively and move on the surface at the fixed speed. Patterns formed in ink are mixed with organic solvent and polymer that act as binder. So added thermal hardening process after evaporate organic solvent at isothermal after printing. I executed high frequency special quality estimation of CPW transmission line to confirm electrical property of manufactured circuit board. We tried a large area printing to confirm application possibility of an ink jet technology.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.583-588
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• 2005

Indium tin oxide (ITO) is a commonly used conducting transparent oxide film (CTO) used in flat panel display applications. Direct write laser ablation is sometimes employed for ITO patterning and it is important that the substrate material and remaining ITO be affected as little as possible by the laser ablation. In this investigation, femtosecond laser ablation of ITO was studied to identify laser processing parameters which cleanly ablated ITO with a minimum of damage to a glass substrate and surrounding ITO. The Ti:Sapphire chirp pulse amplified femtosecond laser used for the experiments had a wavelength of 775nm and produced pulses with a duration of 150fs at a rate of 2 kHz. Ablation was carried out at a sufficiently high panel scanning speed that single ablation spots could be studied. The pulse energy was adjusted to determine feasible spot diameters and depths which could be ablated into the ITO without damaging the glass substrate. Next, ablation of lines without glass damage was also demonstrated. Experiments were also performed with a high repetition rate (100kHz) femtosecond laser.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.6-11
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• 2019

For a wider application of laser direct patterning, selective laser ablation of indium tin oxide (ITO) film on transparent oxide semiconductor (TOS) thin film was carried out using a diode-pumped Q-switched Nd:YVO₄ laser at a wavelength of 1064 nm. In case of the laser ablation of ITO on indium gallium zinc oxide (IGZO) film, both of ITO and IGZO films were fully etched for all the conditions of the laser beams even though IGZO monolayer was not ablated at the same laser beam condition. On the contrary, in case of the laser ablation of ITO on zinc oxide (ZnO) film, it was possible to etch ITO selectively with a slight damage on ZnO layer. The selective laser ablation is expected to be due to the different coefficient of thermal expansion (CTE) between ITO and ZnO.