• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.204.2-204.2
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• 2013

Wide band gap II-VI semiconductors have attracted the interest of many research groups during the past few years due to the possibility of their applications in light-emitting diodes and laser diodes. Among the II-VI semiconductors, ZnO is an important optoelectronic device material for use in the violet and blue regions because of its wide direct band gap (Eg ~3.37 eV) and large exciton binding energy (60 meV). F-doped ZnO (FZO) and undoped ZnO thin films were grown onto quartz substrate by the sol-gel spin-coating method. The doping level in the solution, designated by F/Zn atomic ratio of was varied from 0 to 5 in 1 steps. To investigate the effects of the structure and optical properties of FZO thin films were investigated using X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL). In the XRD, the residual stress, FWHM, bond length, and average grain size were changed with increasing the doping concentration. For the PL spectra, the high INBE/IDLE ratio of the FZO thin films doping concentration at 1 at.% than the other samples.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1003-1010
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• 2000

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition, molecular structure and optical properites of films in-situ annealed in O$_2$ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS, RTIR and optical absorption measurements. The films annealed below 200$\^{C}$ are amorphous, and those annealed above 300$\^{C}$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been observed with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. Also indirect and direct optical band gaps were increased with increasing the annealing temperature and time.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.1
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• pp.12-17
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• 1999

$MgIn_2Se_4 and MgIn_2Se_4 : Ni^{2+}$ single crystals were grown in the rhombohedral structure by the chemical transport reaction (C.T.R.) method using iodine as a transport agent. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had a direct band gap. The fundamental absorption band edge of these single crystals shift to a shorter wavelength region by decreasing temperature and the temperature dependence of the optical energy gaps in these compounds satisfy Varshni equation. The impurity optical absorption peaks due to nickel are observed in $MgIn_2Se_4 and MgIn_2Se_4 : Ni^{2+}$ single crystal. These impurity optical absorption peaks can be attributed to the electronic transitions between the split energy levels of $Ni_{2+}$ ions located at $T_d$ symmetry site of $MgIn_2Se_4$ host lattice. In the hotoluminescence spectrum of the single crystal at 10 K, a blue emission with a peak at 687nm and a green emission with a peak at 815nm for the $MgIn_2Se_4$ single crystal were observed.

• Journal of the Korean Chemical Society
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• v.37 no.6
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• pp.549-554
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• 1993

The titanium oxide thin film was prepared by air oxidation and water vapor oxidation. The photo-electrochemical properties of the electrode was studied in 1M NaOH solution. Titanium dioxide electrodes prepared at higher temperatures were found to have slightly more negative flat band potentials and slightly higher donor densities than their low temperature counterparts. The value of flat band potential ($V_{fb}$) was obtained to be -0.95 ∼ -1.1 V by the measurement of photocurrent and Motte-Schottky plots. The photocurrent of visible region was measured in terms of single crystal filter which entirely blocks the UV radiation. The photo-response of electrodes appeared good with the measument by direct current, when the slit of great resolution was used.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.6
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• pp.225-231
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• 2016

The valence band maximum (VBM) and conduction band minimum (CBM) of Al-doped GaInAsSb alloys substrated on GaSb are calculated by using an analytic approximation based on the tight binding method. The relative positions of the VBM and CBM between Al-GaInASSb and GaSb determine band alignement type, valence band offset (VBO) and conductin band offset (CBO) for the heterojunctions. In this study, aluminium doping is assumed to be substituted in the cation site and limited up to 20 % because it can easily oxidize and degrade materials. It is found that the Al-doped alloys exhibit type-II band alignments over the entire composition range and make the band gaps increase, whereas the VBO and CBO decrease. The decreasing rate of VBO is higher than that of CBO, which implies the Al components play a decisive role in controlling electrons at the interface. The Al-dopled GaInAsSb alloy has a direct band gap induced by $E({\Gamma})$ with a considerable distance from the E(L) and E(X), however, $E({\Gamma})$ approaches to E(L) and E(X) in the high Sb concentration (Sb > 0.7-0.8) which might affect the electron mobility and degrade the optical quality.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.127.1-127.1
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• 2016

Si은 값싸고 넓은 시설기반을 갖추고 있어, 발전산업에서 태양광소자의 주원료로 널리 사용된다. 하지만 Si은 간접 띠틈을 Si의 특성을 개선하기 위해 최근 Si에 특정한 결함을 넣어 직접 띠틈으로 바꿔 광효율을 높이려는 시도가 있다. 2015년 초 Si단결정[111]으로 Seiwatz-chain 형태의 결함이 있다면 결함이 있는 Si(111)에 직접 띠틈이 생길 것 이라고 이론적으로 예상했다. 이러한 구조의 제작방법으로 Ca/Si(111)과 Si(111)을 접합 후 가열하여 Ca을 빼내는 방법을 제시했다[1]. 본 연구에서는 이 제작방법 외에 Ca/Si(111)-$2{\times}1$ 표면에서[2] 에피성장으로 결함이 유지된 Si단결정 형성가능성을 제일원리 계산을 통해 연구했다. 제일원리 계산방법으로는 VASP(Vienna Ab-initio Simulation Package)를 이용하였다. Si원자 한개, 두 개, 세 개가 흡착될 경우 원자당 흡착에너지는 각각 3.73 eV, 3.73 eV, 3.91 eV 였다. 따라서 Si원자는 무리형태로 흡착될 것으로 예상되어 결함을 유지하며 단결정으로 성장하기는 어려울 것으로 보인다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.96-98
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• 2009

This report summarizes our recent efforts to produce large-grained CIGS materials from porous nanoparticle thin films. In our approach, a $Cu_xSe$ nanoparticle colloid were first prepared by reacting a mixture of CuI in pyridine with $Na_2Se$ in methanol at reduced temperature. purified colloid was sprayed onto heated molybdenum-coated sodalime glass substrates to form thin film. After thermal processing of the thin film under a selenium ambient. $Cu_xSe$ colloid and thin film were characterized by scanning electron microscopy, x-ray diffraction. The optical(direct) band gap energy of $Cu_xSe$ thin films is 1.5 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.620-620
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• 2013

When $MoS_2$ is thinned to single layer (1L), photoluminescence (PL) quantum yield drastically increases due to emergence of direct band gap. A recent theory predicts that the electronic structure of 1L $MoS_2$ is very sensitive to its lattice constants. We investigated the response of 1L $MoS_2$ to biaxial tensile strain using spatially resolved PL and Raman spectroscopy. Changes in the lattice constants were monitored by the Raman frequency of the in-plane ($E^1{_2g}$) mode. Systematic correlations between PL and Ramanspectral features, revealed in the preliminary results, will be further tested with samples on other substrates and against thermal stress. The results will also be discussed in regard to the theory which predicts that 1L $MoS_2$ becomes an indirect semiconductor at small tensile strain and turns metallic when further extended.

• 한국정보통신설비학회:학술대회논문집
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• 2003.08a
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• pp.12-15
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• 2003

이동체 탑재형 안테나는 특성상 소형화 및 신호 추적 시간 단축이 중요한 요소이다. 이러한 특성은 위상변위기를 이용한 전자적인 빔 조향 방식으로 한층 더 보완할 수 있다. 현재 이동체에서 주로 사용되고 있는 DBS (Direct Broadcasting Satellite) 수신용 안테나는 패치 및 슬롯 형태의 안테나 소자를 배열하여 사용한다. 하지만 이러한 안테나 소자는 전방위각에 대해 인공위성 방향(앙각 45도)에서 이득 손실이 있기 때문에 위상변위기를 이용한 빔 조향 방식에서 사용하기에는 문제점을 가지고 있다. 따라서 모든 방위각에 대해 앙각 45도에서 최대 이득 특성을 갖는 안테나 소자를 이용해 이득 손실을 줄이는 것은 큰 의미가 있다. 본 논문에서는 monopole 주변에 PBG(Photonic Band Gap) 구조를 구현함으로써 표면파를 억제하여 앙각 45도 방향에서 최대 이득 특성을 보이는 안테나 소자를 제안한다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.119-123
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• 2006

This work presents the fabrication and characteristics of $Bi_2O_3/Si$ heterojunction prepared by rapid thermal oxidation technique without any postdeposition annealing condition. The bismuth trioxide film was deposited onto monocrystalline Si and glass substrates by rapid thermal oxidation of bismuth film with aid of halogen lamp at $500^{\circ}C/\;45$ s in static air. The structural, optical and electrical properties of $Bi_2O_3$ film were investigated and compared with other published results. The structural investigation showed that the grown films are polycrystalline and multiphase (${\alpha}-Bi_2O_3$ and ${\beta}-Bi_2O_3$). Optical properties revealed that these films having direct optical band gap of 2.55 eV at 300 K with high transparency in visible and NIR regions. Dark and illuminated I-V, CV, and spectral responsivity of $Bi_2O_3/Si$ heterojunction were investigated and discussed.