• Title/Summary/Keyword: dimethyihydrazine$(DMH_y)$

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Growth of InGaN on sapphire by GSMBE(gas source molecular beam epitaxy) using $DMH_y$(dimethylhydrazine) as nitrogen source at low temperature (Nitrogen source로 암모니아, $DMH_y$(dimethylhydrazine)을 사용해 Gas-Source MBE로 성장된 InGaN 박막특성)

  • Cho, Hae-Jong;Han, Kyo-Yong;Suh, Young-Suk;Park, Kang-Sa;Misawa, Yusuke
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.1010-1014
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    • 2004

  • High quality GaN layer and $In_xGa_{1-x}N$ alloy were obtained on (0001)sapphire substrate using ammonia$(NH_3)$ and dimethylhydrazine$(DMH_y)$ as a nitrogen source by gas source molecular hem epitaxy(GSMBE) respectively. As a result, RHEED is used to investigate the relaxation processes which take place during the growth of GaN and $In_xGa_{1-x}N$. The full Width at half maximum of the x-ray diffraction(FWHM) rocking curve measured from Plane of GaN has exhibitted as narrow as 8 arcmin. Photoluminescence measurement of GaN and $In_xGa_{1-x}N$ were investigated at room temperature, where the intensity of the band edge emission is much stronger than that of deep level emission. In content of $In_xGa_{1-x}N$ epitaxial layer according to growth condition was investigated.

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