• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.153-153
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• 2011

유리나 폴리머를 기판으로 하는 TFT(Thin film transistor), solar cell에서는 낮은 공정 온도에서($200{\sim}500^{\circ}C$) amorphous semiconductor thin film을 poly-crystal semiconductor thin film으로 결정화 시키는 기술이 매우 중요하게 대두 되고 있다. Ge은 Si에 비해 높은 carrier mobility와 낮은 녹는점을 가지므로, 비 저항이 낮을 뿐만 아니라 더 낮은 온도에서 결정화 할 수 있다. 하지만 일반적으로 쓰이는 Ge의 결정화 방법은 비교적 높은 열처리 온도를 필요로 하거나, 결정화된 원소에 남아있는 metal이 불순물 역할을 한다는 문제점, 그리고 불균일한 결정크기를 만든다는 단점이 있었다. 그 중에서도 현재 가장 많이 쓰이고 있는 MIC, MILC는 metal과 a-Ge이 접촉되는 interface나, grain boundary diffusion에 의해 핵 생성이 일어나고, 결정이 성장하는 메커니즘을 가지고 있으므로 단순 증착과 열처리 만으로는 앞서 말한 단점을 극복하는데 한계를 가지고 있다. 이에 PIII&D 장비를 이용하면, 이온 주입된 원소들이 모재와 반응 할 수 있는 표면적이 커짐으로 핵 생성을 조절 할 수 있을 뿐만 아니라, 이온 주입 시 발생하는 self annealing effect로 결정 크기까지도 조절할 수 있다. 또한 이러한 모든 process가 한 진공 장비 내에서 이루어지므로 장비의 단순화와, 공정간 단계별로 발생하는 불순물과 표면산화를 막을 수 있으므로 절연체 위에 저항이 낮고, hall mobility가 높은 poly-crystalline Ge thin film을 만들 수 있다. 본 연구에서는, 주로 핵 생성과정에서 seed를 만드는 이온주입 조건과, 결정 성장이 일어나는 증착 조건에 따라서 Ge의 결정방향과 크기가 많은 차이를 보이는데, 이는 HR-XRD(High resolution X-ray Diffractometer)와 Raman spectroscopy를 이용하여 측정 하였으며, SEM과 AFM으로 결정의 크기와 표면 거칠기를 측정하였다. 또한 Hall effect measurement를 통해 poly-crystalline thin film 의 저항과 hall mobility를 측정하였다.

• Economic and Environmental Geology
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• v.26 no.1
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• pp.107-114
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• 1993

For the blue sapphires from Santung, China, the color change before and after has been investigated by UV-Visible spectrophotometry method. The blue sapphires from Shantung show four groups of absorption bands: the bands A (374, 386 and 450 nm) being attributed to single $Fe^{3+}$ ion, the band B (560, 579 and $704n{\breve{m}}$) to $Fe^{2+}$/$Ti^{4+}$ pairs, the band C (-800 nm) to $Fe^{2+}$/$Fe^{3+}$ pairs, and the D (528 nm) to $Ti^{3+}$ dd transitions. From those UV-VIS characteristics the origin of blue color of the sapphires is confirmed to be attributed by the factors such as $Fe^{2+}$/$Fe^{3+}$ and $Ti^{3+}$/$Ti^{4+}$. The absorption spectra of natural blue sapphires before and after heat treatment show distintive features, comparing with those of sapphires from other localities: the bands of 689 nm and of $Cr^{3+}$ are not recorded on the spectra of sapphires from Shantung. The band (492 nm), which resulted from $Ti^{3+}$, is not shown and the intensity of the band 528 nm decreases after the heat treatment. Decoloration of ink-blue sapphires are found to be successful by heat treatment with the control of annealing and atmosphere. During the diffusion process the excess components of impurities contained originally in the host crystal were expelled to the surface of crystals, enhancing the transparency of the crystals noticeably.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.484-492
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• 1998

The formation mechanism of the epitaxial cobalt silicide from Co/Ti/OOO) Si structure has been investigated. The transition temperature of CoSi to CoSi, was found to increase with increasing the Ti interlayer thickness, which may be owing to the occupation of the tetrahedral sites by Ti atoms in the CoSi crystal structure as well as the blocking effect of the Ti interlayer on the diffusion of Co. Also, the Co- Ti-O ternary compound formed at the metal! Si interface at the begining of silicidation, which seems to play an important role in epitaxial growth of Co silicide. The final layer structures obtained after a rapid thermal annealing of the Cot Ti/( 100) Si bi-layer structure turned out to be Ti oxide/Co- Ti-Si/epi-$CoSi_2$/OOO)

• Journal of Powder Materials
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• v.13 no.1 s.54
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• pp.18-24
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• 2006

The brazing adhesion properties of Ag coated W-Ag electric contact on the Cu substrate have been investigated in therms of microstructure, phase equilibrium and adhesion strength. Precoating of Ag layer ($3{\mu}m$ in thickness) on the $W-40\%Ag$ contact material was done by electro-plating method. Subsequently the brazing treatment was conducted by inserting BCuP-5 filler metal (Ag-Cu-P alloy) layer between Ag coated W-Ag and Cu substrate and annealing at $710^{\circ}C$ in $H_2$ atmosphere. The optimum brazing temperature of $710^{\circ}C$ was semi-empirically calculated on the basis of the Cu atomic diffusion profile in Ag layer of commercial electric contact produced by the same brazing process. As a mechanical test of the electric contact after brazing treatment the adhesion strength between the electric contact and Cu substrate was measured using Instron. The microstructure and phase equilibrium study revealed that the sound interlayer structure was formed by relatively low brazing treatment at $710^{\circ}C$. Thin Ag electro-plated layer precoated on the electric contact ($3{\mu}m$ in thickness) is thought to be enough for high adhesion strength arid sound microstructure in interface layer.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.149-154
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• 2005

We fabricated Ni/Co(or Co/Ni) composite silicide layers on the non-patterned wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of $700{\~}1100^{\circ}C$ for 40 seconds. The sheet resistance, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the poly silicon inversion due to fast metal diffusion lead to decrease silicide thickness. Our results imply that we should consider the serious inversion and fast transformation in designing and process f3r the nano-height fully cobalt nickel composite silicide gates.

• Korean Journal of Materials Research
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• v.18 no.3
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• pp.153-158
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• 2008

Fe-aluminides have the potential to replace many types of stainless steels that are currently used in structural applications. Once commercialized, it is expected that they will be twice as strong as stainless steels with higher corrosion resistance at high temperatures, while their average production cost will be approximately 10% of that of stainless steels. Self-propagating, high-temperature Synthesis (SHS) has been used to produce intermetallic and ceramic compounds from reactions between elemental constituents. The driving force for the SHS is the high thermodynamic stability during the formation of the intermetallic compound. Therefore, the advantages of the SHS method include a higher purity of the products, low energy requirements and the relative simplicity of the process. In this work, a Fe-aluminide intermetallic compound was formed from high-purity elemental Fe and Al foils via a SHS reaction in a hot press. The formation of iron aluminides at the interface between the Fe and Al foil was observed to be controlled by the temperature, pressure and heating rate. Particularly, the heating rate plays the most important role in the formation of the intermetallic compound during the SHS reaction. According to a DSC analysis, a SHS reaction appeared at two different temperatures below and above the metaling point of Al. It was also observed that the SHS reaction temperatures increased as the heating rate increased. A fully dense, well-bonded intermetallic composite sheet with a thickness of $700\;{\mu}m$ was formed by a heat treatment at $665^{\circ}C$ for 15 hours after a SHS reaction of alternatively layered 10 Fe and 9 Al foils. The phases and microstructures of the intermetallic composite sheets were confirmed by EPMA and XRD analyses.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.377-385
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• 2018

For the investigation of dopant profiles in implanted $Si_{1-x}Ge_x$, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in $Si_{1-x}Ge_x$ are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of $R_p$ and 1.8% deviations of ${\Delta}R_p$ owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of $R_p$ and 8.1% deviations of ${\Delta}R_p$ in the arsenic implanted $Si_{0.2}Ge_{0.8}$ layer and 8.5% deviations of $R_p$ and 38% deviations of ${\Delta}R_p$ in the $Si_{0.5}Ge_{0.5}$ layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the $Si_{1-x}Ge_x$ layer becomes more important for accurate device scaling and fabrication technologies.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.37-43
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• 2009

Silicon dioxide as gate dielectrics was grown at $400^{\circ}C$ on a polycrystalline Si substrate by inductively coupled plasma oxidation using a mixture of $O_2$ and $N_2O$ to improve the performance of polycrystalline Si thin film transistors. In conventional high-temperature $N_2O$ annealing, nitrogen can be supplied to the $Si/SiO_2$ interface because a NO molecule can diffuse through the oxide. However, it was found that nitrogen cannot be supplied to the Si/$SiO_2$ interface by plasma oxidation as the $N_2O$ molecule is broken in the plasma and because a dense Si-N bond is formed at the $SiO_2$ surface, preventing further diffusion of nitrogen into the oxide. Nitrogen was added to the $Si/SiO_2$ interface by the plasma oxidation of mixtures of $O_2/N_2O$ gas, leading to an enhancement of the field effect mobility of polycrystalline Si TFTs due to the reduction in the number of trap densities at the interface and at the Si grain boundaries due to nitrogen passivation.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.321-328
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• 2011

The 30 nm-thick Ni layers was deposited on a flexible polyimide substrate with an e-beam evaporation. Subsequently, we deposited a Si layer using a catalytic CVD (Cat-CVD) in a hydride amorphous silicon (${\alpha}$-Si:H) process of $T_{s}=180^{\circ}C$ with varying thicknesses of 55, 75, 145, and 220 nm. The sheet resistance, phase, degree of the crystallization, microstructure, composition, and surface roughness were measured by a four-point probe, HRXRD, micro-Raman spectroscopy, FE-SEM, TEM, AES, and SPM. We confirmed that our newly proposed Cat-CVD process simultaneously formed both NiSi and crystallized Si without additional annealing. The NiSi showed low sheet resistance of < $13{\Omega}$□, while carbon (C) diffused from the substrate led the resistance fluctuation with silicon deposition thickness. HRXRD and micro-Raman analysis also supported the existence of NiSi and crystallized (>66%) Si layers. TEM analysis showed uniform NiSi and silicon layers, and the thickness of the NiSi increased as Si deposition time increased. Based on the AES depth profiling, we confirmed that the carbon from the polyimide substrate diffused into the NiSi and Si layers during the Cat-CVD, which caused a pile-up of C at the interface. This carbon diffusion might lessen NiSi formation and increase the resistance of the NiSi.

• Bulletin of the Korean Chemical Society
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• v.33 no.9
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• pp.3061-3070
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• 2012

Novel 2-hexylthieno[3,2-b]thiophene-containing conjugated molecules have been synthesized via a reduction reaction using tin chloride in an acidic medium. They exhibited good solubility in common organic solvents and good self-film and crystal-forming properties. The single-crystalline objects were fabricated by a solvent slow diffusion process and then were employed for fabricating field-effect transistors (FETs) along with thinfilm transistors (TFTs). TFTs made of 5 and 6 exhibited carrier mobility as high as 0.10-0.15 $cm^2V^{-1}s^{-1}$. The single-crystal-based FET made of 6 showed 0.70 $cm^2V^{-1}s^{-1}$ which was relatively higher than that of the 5-based FET (${\mu}=0.23cm^2V^{-1}s^{-1}$). In addition, we fabricated organic photovoltaic (OPV) cells with new 2-hexylthieno [3,2-b]thiophene-containing conjugated molecules and methanofullerene [6,6]-phenyl C61-butyric acid methyl ester ($PC_{61}BM$) without thermal annealing. The ternary system for a bulk heterojunction (BHJ) OPV cell was elaborated using $PC_{61}BM$ and two p-type conjugated molecules such as 5 and 7 for modulating the molecular energy levels. As a result, the OPV cell containing 5, 7, and $PC_{61}BM$ had improved results with an open-circuit voltage of 0.90 V, a short-circuit current density of 2.83 $mA/cm^2$, and a fill factor of 0.31, offering an overall power conversion efficiency (PCE) of 0.78%, which was larger than those of the devices made of only molecule 5 (${\eta}$~0.67%) or 7 (${\eta}$~0.46%) with $PC_{61}BM$ under identical weight compositions.