• 한국전기전자재료학회논문지
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• 제19권11호
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• pp.1000-1004
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• 2006

In this paper, thermal stability of Ni-silicide formed on the SOI substrate with $B_{11}$ has been characterized. The sheet resistance of Ni-silicide on un-doped SOI and $B_{11}$ implanted bulk substrate was increased after the post-silicidation annealing at $700^{\circ}C$ for 30 min. However, in case of $B_{11}$ implanted SOI substrate, the sheet resistance showed stable characteristics after the post-silicidation annealing up to $700^{\circ}C$ for 30 min. The main reason of the excellent property of $B_{11}$ sample is believed to be the retardation of Ni diffusion by the boron and bottom oxide layer of SOI. Therefore, retardation of Ni diffusion is highly desirable lot high performance Ni silicide technology.

• 한국재료학회지
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• 제12권9호
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• pp.696-700
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• 2002

The Ti-aluminide intermetallic compound was formed from high purity elemental Ti and Al foils by self-propagating, high-temperature synthesis(SHS) in hot press. formation of $TiAl_3$ at the interface between Ti and Al foils was controlled by temperature, pressure, heating rate, and so on. According to the thermal analysis, it is known in this study that the heating rate is the most important factor to form the intermetallic compound by this SHS reaction. The V layer addition between Al and Ti foils increased SHS reaction temperatures. The fully dense, well-boned inter-metallic composite($TiA1/Ti_3$Al) sheets of 700 m thickness were formed by heat treatment at $1000^{\circ}C$ for 10 hours after the SHS reaction of alternatively layered 10 Ti and 9 Al foils with the V coating layer. The phases and microstructures of intermetallic composite sheets were confirmed by EPMA and XRD.

• 한국진공학회지
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• 제9권3호
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• pp.267-272
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• 2000

electroplating(EP)법을 이용하여 ULSI용 Cu 박막을 제조하였다. seed Cu는 sputtering으로 증착하였으며, 확산방지막으로 TaN를 사용하였다. 제작된 EP Cu 박막은 seed Cu의 영향으로 열처리 조건에 관계없이 Cu(111)방향으로 강하게 우선 배향 하였다. 열처리 온도와 시간이 증가함에 따라 Cu박막의 미세조직이 non-columnar structure에서 약 2배 이상 결정립 성장하여 columnar structure로 바뀌었으며, 또한 as-deposit시 관찰되었던 stacking fault, twin, dislocation들이 상당히 줄어드는 것이 관찰되었다. Cu의 확산에 의하여 생기는 copper-silicide는 관찰할 수 없었으며, 이것은 두께 45nm의 TaN막이 $450^{\circ}C$, 30분 열처리시 확산방지막으로 충분한 역할을 한 것으로 판단된다. Cu(111)우선 배향과 열처리에 의한 결정립 성장 및 defect감소는 Cu 박막의 결정립계에서 발생하는 electromigration 현상을 상당히 줄일 수 있을 것으로 판단된다.

• 한국태양에너지학회 논문집
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• 제33권4호
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• pp.31-38
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• 2013

The chemical composition of the black Cr solar selective coatings electrodeposited were investigated for property analysis by using a XPS(X-ray photoelectron spectroscopy) before and after annealing in air at $300^{\circ}C{\sim}500^{\circ}C$ for 120 hours. Black Cr selective coating exposed by solar radiation for 5 months was compared with annealed sample. In addition, The Cu solar selective coatings were prepared by thermal oxidation method for low temperature application. The samples obtained were characterized by using the optical reflectance measurements by using a spectrometer. Optical properties of oxidized Cu solar coatings were solar absorptance $({\alpha}){\simeq}0.62$ and thermal emittance $({\epsilon}){\simeq}0.41(100^{\circ}C)$. In the as-prepared Cr black selective coating, the surface of the coating was found to have Cr hydroxide and Cr. The Cr hydroxide of the major component was converted to $Cr_2O_3$ or $CrO_3$ form after annealing at $500^{\circ}C$ with the desorption of water molecules. The black Cr selective coating was degraded significantly at temperature of $500^{\circ}C$. The main optical degradation modes of this coating were diffusion of Cu substrate materials.

• 한국재료학회지
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• 제31권12호
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• pp.727-731
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• 2021

In this study, we have investigated a selective emitter using a UV laser on BBr₃ diffusion doping layer. The selective emitter has two regions of high and low doping concentration alternatively and this structure can remove the disadvantages of homogeneous emitter doping. The selective emitters were fabricated by using UV laser of 355 nm on the homogeneous emitters which were formed on n-type Si by BBr₃ diffusion in the furnace and the heavy boron doping regions were formed on the laser regions. In the optimized laser doping process, we are able to achieve a highly concentrated emitter with a surface resistance of up to 43 Ω/□ from 105 ± 6 Ω/□ borosilicate glass (BSG) layer on Si. In order to compare the characteristics and confirm the passivation effect, the annealing is performed after Al₂O₃ deposition using an ALD. After the annealing, the selective emitter shows a better effect than the high concentration doped emitter and a level equivalent to that of the low concentration doped emitter.

• 한국세라믹학회지
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• 제41권6호
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• pp.450-455
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• 2004

NiCr 합금을 열증발원으로 사용한 thermal evaporation법으로 NiCr박막을 $Al_2$O$_3$/Si 기판 위에 증착시켰다. 이 때 동일한 량의 NiCr 합금을 1회에 모두 증착하는 방법과, l/2씩 2회 증착하는 방법으로 NiCr 박막을 각각 증착시켜, 박막의 미세구조에 따른 막의 특성변화를 고찰하였으며, 열처리 온도에 따른 NiCr 박막의 상 변화, 조성변화 및 미세구조 변화를 XRD, AES 및 FE-SEM으로 각각 분석하였다. 열처리 과정에서 박막내부에 존재하는 Cr 성분이 표면 쪽으로 확산하여 산화됨으로써 Cr산화층/Ni 층/Cr 산화층의 전형적인 다층구조를 형성함을 알 수 있었으며, 특히, $700^{\circ}C$ 이상에서는 Ni 층이 Cr산화층을 통하여 표면 쪽으로 확산됨으로써 표면에 원주형 결정립을 가지는 NiO 층을 형성하였다. 특히 Ni 층이 확산 전의 구조를 유지한 채 표면에 추가적인 NiO층이 형성되는데, 이는 형성된 Cr산화층의 확산이 상대적으로 Ni 층에 비하여 어려운데 기인한다.

• 한국자기학회지
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• 제15권4호
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• pp.226-230
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• 2005

본 연구에서는 스핀밸브 구조에서 하지층으로 많이 사용되고 있는 Ta 층에 질소를 첨가하여 질소량에 따른 자기적 특성과 열처리 결과를 비교 검토하였다. 또한 하지층에 질소를 첨가하여 확산 방지막으로서 역할과 기판과 하지층과의 접착력을 측정하여 비교하였다. 사용된 스핀밸브는 Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta 구조이다. Ta 박막에 비해 TaN 박막의 질소량이 증가할수록 증착률은 감소하였고, 비저항과 표면 거칠기는 증가하였다. 고온에서 열처리 후 측정한 XRD 결과를 보면 Si/Ta 박막에서는 규소화합물이 생성된 반면 Si/TaN 박막에서는 규소화합물을 발견할 수 없었다. 자기저항비(MR)와 교환결합자장($H_{ex}$)은 질소량이 4.0 sccm 이상에서는 감소하였다. 열처리 결과 자기저항비는 하지층이 Ta인 시편과 질소량이 4.0 sccm까지 혼합된 TaN 시편은 $200^{\circ}C$까지는 약 $0.5\%$ 정도 증가하다가 감소하였다. 기판과 하지층과의 접착력을 측정한 결과 Ta 박막보다 질소량이 8.0 sccm인 TaN 박막인 경우 약 2배 강한 접착력을 보였다. 본 연구 결과에 의하면 하지층 증착 시 아르곤 가스에 3.0 sccm 정도의 질소 가스를 혼합하여 사용하면 자기적 특성에 크게 영향을 주지 않으면서 확산 방지막, 접착력 향상등의 이점을 얻을 수 있으리라 사료된다.

• 한국재료학회지
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• 제18권9호
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• pp.486-491
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• 2008

The effect of annealing treatment conditions on the interfacial adhesion energy between electrolessplated Ni film and polyimide substrate was evaluated using a $180^{\circ}$ peel test. Measured peel strength values are $26.9{\pm}0.8,\;22.4{\pm}0.8,\;21.9{\pm}1.5,\;23.1{\pm}1.3,\;16.1{\pm}2.0\;and\;14.3{\pm}1.3g/mm$ for annealing treatment times during 0, 1, 3, 5, 10, and 20 hours, respectively, at $200^{\circ}C$ in ambient environment. XPS and AES analysis results on peeled surfaces clearly reveal that the peeling occurs cohesively inside polyimide. This implies a degradation of polyimide structure due to oxygen diffusion through interface between Ni and polyimide, which is also closely related to the decrease in the interfacial adhesion energy due to thermal treatment in ambient conditions.

• Applied Science and Convergence Technology
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• 제26권6호
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• pp.208-213
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• 2017

Flexible opto-electronic devices are developed on the insulating layer deposited stainless steel (STS) substrates. The silicon dioxide ($SiO_2$) material as the diffusion barrier of Fe and Cr atoms in addition to the electrical insulation between the electronic device and STS is processed using the plasma enhanced chemical vapor deposition method. Noble silver (Ag) films of approximately 100 nm thickness have been formed on $SiO_2$ deposited STS substrates by E-beam evaporation technique. The films then were annealed at $650^{\circ}C$ for 20 min using the rapid thermal annealing (RTA) technique. It was investigated the variation of the surface morphology due to the interaction between Ag films and $SiO_2$ layers after the RTA treatment. The results showed the movement of Si atoms in silver film from $SiO_2$. In addition, the structural investigation of Ag annealed at $650^{\circ}C$ indicated that the Ag film has the material property of p-type semiconductor and the bandgap of approximately 1 eV. Also, the films annealed at $650^{\circ}C$ showed reflection with sinusoidal oscillations due to optical interference of multiple reflections originated from films and substrate surfaces. Such changes can be attributed to both formation of $SiO_2$ on Ag film surface and agglomeration of silver film between particles due to annealing.

• Elastomers and Composites
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• 제57권1호
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• pp.1-8
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• 2022

In this study, the photo-deposition method was used to introduce Ag onto the surface of TiO₂ to synthesize an Ag-TiO₂ composite. The effects of the varying amounts of AgNO₃ precursor and annealing time periods on the Ag content in the composites, as well as their antibacterial characteristics under visible light conditions were studied. SEM analysis revealed the spherical morphology of the Ag-TiO₂ composite. Compared with TiO₂, the Ag particles were too small to be observed. An XPS analysis of the Ag-TiO₂ surface confirmed the Ag content and showed the peak intensities for elements such as Ag, Ti, O, C, and Si. The highest Ag content was observed when 33.3 wt.% of AgNO₃ and an annealing time of 6 h were employed; this was the optimum annealing time for Ti-Ag-O bonding, in that the lowest number of O bonds and the highest number of Ag bonds were confirmed by XPS analysis. Superior antibacterial properties against Bacillus and Escherichia coli, in addition to the widest inhibition zones were exhibited by the Ag-TiO₂ composite with an increased Ag content in a disk diffusion test, the bacterial reduction rate against Staphylococcus aureus and Escherichia coli being 99.9%.