• 제어로봇시스템학회논문지
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• 제4권2호
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• pp.246-255
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• 1998

This paper presents a novel method for real-time malfunction detection of plasma etching process using EPD signal traces. First, many reference EPD signal traces are collected using monochromator and data acquisition system in normal etching processes. Critical points are defined by applying differentiation and zero-crossing method to the collected reference signal traces. Critical parameters such as intensity, slope, time, peak, overshoot, etc., determined by critical points, and frame attributes transformed signal-to symbol of reference signal traces are saved. Also, UCL(Upper Control Limit) and LCL(Lower Control Limit) are obtained by mean and standard deviation of critical parameters. Then, test EPD signal traces are collected in the actual processes, and frame attributes and critical parameters are obtained using the above mentioned method. Process malfunctions are detected in real-time by applying SPC(Statistical Process Control) method to critical parameters. the Real-time malfunction detection method presented in this paper was applied to actual processes and the results indicated that it was proved to be able to supplement disadvantages of existing quality control check inspecting or testing random-selected devices and detect process malfunctions correctly in real-time.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1996년도 한국자동제어학술회의논문집(국내학술편); 포항공과대학교, 포항; 24-26 Oct. 1996
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• pp.1360-1363
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• 1996

EPD(End Point Detection) is used to decide etching degree of layer which must be removed at wafer etching process in plasma etching process which is one of the most important process in semiconductor manufacturing. In this thesis, the method which detects malfunction of etching process in real-time will be discussed. Several EPD signal traces are collected in normal plasma etching condition and used as reference EPD signal traces. Critical points can be detected by applying differentiation and zero-crossing techniques to reference EPD signal. Mean and standard deviation of critical parameters which is memorized from reference EPD signal are calculated and these determine the lower and higher limit of control chart. And by applying statical control chart to EPD signals which are collected in real etching process malfunctions of process are detected in real-time. By means of applying this method to the real etching process we prove our method can accurately detect the malfunction of etching process and can compensate disadvantage of current industrial method.

• 한국자동차공학회논문집
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• 제13권4호
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• pp.58-65
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• 2005

A method measuring angular speed and estimating angular acceleration of an automotive wind shield wiper pivot with limited resources has been proposed. Limited resources refer to the fact that processes cannot be operated in real-time with a regular notebook running a Microsoft Windows. Also, they refer to the fact that data acquisition cards have only two general purpose counters as many generic cards do. An optical incremental encoder has been employed for measuring angular motion. To measure the angular speed of the pivot, periods for the encoder's output pulses have been measured as the speed is related to the reciprocal of the period. Since only information acquired from one counter channel is the magnitude of the angular speed, sign correction is necessary. Also the information for the exact time when a pivot passes left and right dead points is also missing and the situation is inherent to the hardware setup. To find out the zero-crossing time of the angular speed, a linear interpolation technique has been employed. Lastly, to overcome the imperfection of the mechanical encoders, the angular speed has been curve fitted to a spline. Angular acceleration can be obtained by a differentiation of the angular speed.