• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.240-246
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• 2000

The microwave dielectric properties of the complex perovskite (Pb0.5Ca0.5)(Fe0.5Ta0.5)O3 ceramics were investigated with the porosity and the dielectric mixing rule. Assuming that the specimens were mixtures of real dielectrics and pores, with 3-0 connectivity, the ionic polarizabilities modified by Maxwell's equation were more close to the theoretical values rather than those modified by Wiener's equation in porous specimens. The theoretical dielectirc loss were obtained with the infrared reflectivity spectra from 50 to 4000cm-1, which were calculated by Kramers-Kronig analysis and classical osciallator model. The relative tendency of dielectric loss calculated from the theoretical value and Maxwell's equation in the specimens with different porosities was in good agreement with the one by the post resonant method.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.1
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• pp.25-31
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• 1998

The reliability of fluorine doped silicon oxide (SiOF) films for intermetal dielectrics in multilevel interconnections of ultra-large scale integrated circuits (ULSIs) is investigated. SiOF films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECRPECVD) using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films was carried out I terms of air exposure time, The reliability test of Cu/TiN/SiOF/Fi specimen was carried out in terms of temperature by rapid thermal annealing (RTA) in N2 ambient. After O2 plasma treatment,, no appreciable peak directly related to moisture absorption was detected. The capacitance-voltage (C-V) characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu/TiN/SiOF/Si system was found to be reliable up to $600^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.125-129
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• 1992

When relaxation time will be distributed, TSC observed in the experimental procedure was analysed by using a potential model having two equilibrium positions and equations of dielectric properties was derived. Calculation of distribution was made by matrix method and compared/confirmed values obtained by TSC and alternating current which have a correspondence with each other. In this measurement, distribution of activation energy and relaxation time was determined by TSC peak at around 147k/364 of which center is 10$\^$-4/ sec/10$\^$5/ sec respectively at room temperature and also obtained dielctric loss factor at the range of 10$\^$-7/-10$\^$5/Hz. It seems that low temperature peak is local dispersion and high temperature peak have a relation to dielectric transition of the material.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2315-2317
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• 2005

In this paper, an iterative method to model the electromagnetic heating of electrically large lossy dielectrics is presented. Frequency domain finite element (FEM) solutions of the wave equation are determined for the lossy inhomogeneous dielectric as the material properties are change with temperature and time. The power absorbed from microwave losses is applied to a finite element time domain (FETD) calculation of the heat diffusion equation. Time steps appropriate for updating the piecewise material properties in the wave equation and the time stepping of the heat equation are presented. The effects of preheating and source frequency are investigated.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.644-651
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• 2003

Effects of additives on electrical properties and microstructure of MLCC X7R dielectrics have been investigated. The additives of glass frit or oxide form were added in the same main composition by the different powder processing conditions. As a result of the dielectric property and microstructure analysis, the composition having the glass layer with dopant concentration gradient showed the excellent dielectric properties. The MLCCs were fabricated with the excellent composition and all dielectric properties satisfied the X7R requirements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.313-313
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• 2008

Aerosol Deposition(AD) method is based on the impact consolidation phenomenon of ceramic fine particles at room temperature. AD is promising technology for the room temperature deposition of the dielectrics thin films with high quality. Embedding of passive components such as capacitors into printed circuit board is becoming an important strategy for electronics miniaturization and device reliability, manufacturing cost reduction. So, passive integration using aerosol deposition. In this study, we examine the effects of the characteristics of raw powder on the thickness, roughness, electrical properties of $BaTiO_3$ thin films. Thin films were deposited on the copper foil and copper plate. Electrical and material properties was investigated as a change of annealing temperature. We final aim the effects of before and after of laminated on the electrical properties and suit of embedded capacitor.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.189-194
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• 1999

Crystallization of glasses in the system (Ca, Sr, Ba)$O-Al_2O_3-B_2O_3-SiO_2-TiO_2$ and dielectric properties of crystallized glasses were investigated. As increasing B2O3 content and decreasing SiO2 content in the glass, the major crystalline phase changed from $(Sr, Ba)_2TiSi_2O_8$ to (Ca, Sr, Ba)TiO3, the dielectric constant of crystallized glasses increased and the Temperature Coefficient of Capacitance (TCC) changed to negative. The dielectric constant and TCC was estimated for (Sr, Ba)2TiSi2O8 phase as 18 and -440 $ppm/^{\circ}C$, respectively and for (Ca, Sr, Ba)TiO3 phase as 307 and -1900 $ppm/^{\circ}C$, respectively. The dielectric properties of (Ca, Sr, Ba)TiO3 phase (in this study) were similar to those of (Ca, Ba) TiO_3 solid-solution^12)$, but $(Sr, Ba)_2TiSi_2O_8$ phase (in this study) and $Sr_2TiSi_2O_\;8^4$ showed the different properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.707-710
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). In this paper, we have investigated slurry properties and CMP performance of silicon dioxide (oxide) as a function of different temperature of slurry. Thermal effects on the silica slurry properties such as pH, particle size, conductivity and zeta potential were studied. Moreover, the relationship between the removal rate (RR) with WIWNU and slurry properties caused by changes of temperature were investigated. Therefore, the understanding of these temperature effects provides a foundation to optimize an oxide CMP Process for ULSI multi-level interconnection technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1080-1086
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• 2003

Effects of E$_2$O$_3$. HO$_2$O$_3$ and Dy$_2$O$_3$ addition on dielectric properties of non-reducible BaTiO$_3$ based X7R dielectrics with Ni electrode have been studied in a reduced atmosphere. As the content of rare-earth with E$_2$O$_3$. HO$_2$O$_3$, Dy$_2$O$_3$ was less than 3wt%, The TCC(Temperature Capacitance Change) and insulation resistance characteristics were improved by compensate the oxygen vacancies due to occupy either the Ba or Ti site. We developed the composition of X7R (EIA standard) for higher capacitance MLCC which had high reliability electric properties by the addition of Er ion into BaTiO$_3$ + MgO + Y2O$_3$ + MnO + (Ba$\sub$0.4/Ca$\sub$0.6/)SiO$_3$ composition.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.19-25
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• 2000

Dielectric polymer films produced from benzocyclobutene (BCB) formulations (CYCLOTENE＊ family resins) are known to possess many desirable properties for microelectronic applications; for example, low dielectric constant and dissipation factor, low moisture absorption, rapid curing on hot plate without reaction by-products, minimum shrinkage in curing process, and no Cu migration issues. Recently, BCB-based products for thick film applications have been developed, which exhibited excellent dissipation factor and dielectric constant well into the GHz range, 0.002 and 2.50, respectively. Derived from these properties, the applications are developed in: bumping/wafer level packaging, Ga/As chip ILD, optical waveguide, flat panel display, and lately in BCB-coated Cu foil for build-up board. In this paper, we review the relevant properties of BCB, then the application areas in bumping/wafer level packaging and BCB-coated Cu foil for build-up board.