• Journal of the Korean Graphic Arts Communication Society
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• v.29 no.2
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• pp.83-92
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• 2011

A inorganic powder EL lamp was made by screen printing technique with phosphor ink and dielectric ink. The thickness change of a phosphor ink layer and a dielectric ink layer were not influenced on dielectric content, but rely on phosphor size and vehicle. Once finishing screen printing technique with phosphor ink and dielectric ink, and its surface has been printed again before not drying of phosphor ink and dielectric ink. Then phosphor ink and dielectric ink were not transferred. The electric capacity of inorganic powder EL lamp was more influenced on dielectric content than the thickness of dielectric ink layer, and it was more dependent on the thickness of phosphor ink layer than the thickness of dielectric ink layer.

• Journal of the Korean Graphic Arts Communication Society
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• v.29 no.2
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• pp.33-44
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• 2011

The inorganic powder EL lamp was made by screen printing technique with a phosphor ink and a dielectric ink. The thickness of a phosphor ink layer and a dielectric ink layer is $35{\mu}m$ and $54{\mu}m$ respectively. A increasing ratio of the luminance of inorganic powder EL lamp to be a 1P1PD-phosphor ink layer in which increased voltage at constant frequency is higher 12% than when increased frequency at constant voltage. It is higher 57% than when increased frequency at constant voltage that the rate of increase of the luminance of inorganic powder EL lamp to be a 2PD-phosphor ink layer in which increased voltage at constant frequency. Finally, when increased voltage at constant frequency, a increasing ratio of the luminance of inorganic powder EL lamp to be a 2PD-phosphor ink layer is higher about 40% than that to be a 1P1PD-phosphor ink layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.86-88
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• 2008

Organosiloxane based spin on planarizing dielectrics (PTS-E and PTS-R) were developed for application in flat panel displays as a replacement to conformal chemical vapor deposited SiNx. Here we demonstrate the successful use of siloxane-based material as a passivation layer for active matrix $\alpha$-Si thin film transistors (TFT) on both rigid and flexible substrates.