• 한국전기전자재료학회논문지
• /
• 제18권11호
• /
• pp.1038-1042
• /
• 2005

We have investigated dielectric properties depending on bias voltage in organic light-emitting diodes using 8-hydroxyquinoline aluminum $(Alq_3)$ as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using impedance of characteristics. Impedance characteristics was measured complex impedance Z and phase $\theta$ in the frequency range of 40 Hz to $10^8$ Hz. We obtained complex electrical conductivity, dielectric constant, and loss tangent $(tan\delta)$ of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• 한국세라믹학회지
• /
• 제37권3호
• /
• pp.240-246
• /
• 2000

The microwave dielectric properties of the complex perovskite (Pb0.5Ca0.5)(Fe0.5Ta0.5)O3 ceramics were investigated with the porosity and the dielectric mixing rule. Assuming that the specimens were mixtures of real dielectrics and pores, with 3-0 connectivity, the ionic polarizabilities modified by Maxwell's equation were more close to the theoretical values rather than those modified by Wiener's equation in porous specimens. The theoretical dielectirc loss were obtained with the infrared reflectivity spectra from 50 to 4000cm-1, which were calculated by Kramers-Kronig analysis and classical osciallator model. The relative tendency of dielectric loss calculated from the theoretical value and Maxwell's equation in the specimens with different porosities was in good agreement with the one by the post resonant method.

• 한국세라믹학회지
• /
• 제16권1호
• /
• pp.31-37
• /
• 1979

The middle point of composition within the system $MgO-Al_2O_3-SiO_2$ has been studied for applicability as ceramics dielectrics. A Kyul Sung Tale of high purity, magnesia clinker of Sam-wha chemical company, C.P. aluminium oxide, calcium carbonate, red lead, barium carbonate which was made into frit were used the raw materials. A number of steatite ceramics were prepared under carefully controlled condition and the water absorption, linear shrinkage, power factor, dielectric constant and dielectric loss were measured at elevated temperature. When we used magnesia clinker as flux, the quantity of this flux was 0.05mole, sintering temperature was continued for 2 hrs. at 1, 27$0^{\circ}C$. From this conditions, we could get the data whose power factor was 0.142%, water absorption was zero, linear shrinkage was 8.76%, dielectric constant was 5.63, dielectric loss was 0.00799. When we used red lead as flux, the quantity of this flux was 0.033mole and 0.066mole, sintering temperature was continued for 2hrs. at 1, 26$0^{\circ}C$. From this conditions, we could get the data whose water absorption was zero, linear shrinkage was 8.03%, and 8.48%, power factor was 0.136% and 0.062%, dielectric loss was 0.0072 and 0.0037. When we used barium carbonate made into frit as flux, the quantity of this flux was 0.02mole, sintering temperature was continued for 2hrs. at 1, 27$0^{\circ}C$. From this conditions, we could get the data whose water absoption was zero, linear shrinkage was 8.44%, power factor was 0.138%, dielectric constant was 5.69, dielectric loss was 0.0074.

• 한국세라믹학회지
• /
• 제19권4호
• /
• pp.281-286
• /
• 1982

The composition of glasses to be suitable for crystallisation of $BaTiO_3$ by heat-treatment and the dielectric properties of the glass-ceramics were investigated. The composition of the family of glasses was defined by the formula $\chi$ $BaTiO_3 + (100-$\chi$)Al_2O_3$.$2SiO_2$ and excess BaO. Data were presented on dielectric constant and loss tangent at various frequencies. The effects of excess BaO on dielectric properties were investigated. The additions of $Na_2O$ and $Nb_2O_5$ shifted the Curite temperature of these glass-ceramics. The glass composition which was able to be melted at 145$0^{\circ}C$ and moulded as homogeneous glass phase without devitrification should contain $Al_2O_3$.$2SiO_2$ more than 30 mole %. The more the amount of additive BaO increased, the more dielectric constant increased. When the maximum heat-treatment temperature was 105$0^{\circ}C$, we obtained higher dielectric constant than that of 95$0^{\circ}C$. The dielectric constant and the dielectric loss were stable at frequencies between 5$\times$104 and 107 cycle per second. When $Na_2O$ and $Nb_2O_5$ were added, the Curie temperature, presented at 14$0^{\circ}C$ to 15$0^{\circ}C$, shifted to lower temperature. Therefore, the glass-ceramics having high dielectric constant at room temperature were obtained.

• 센서학회지
• /
• 제29권1호
• /
• pp.7-13
• /
• 2020

Dielectric capacitors are integral components in electronic devices that protect the electric circuit by providing modulated steady voltage. Explosive growth of the electric automobile market has resulted in an increasing demand for dielectric capacitors that can operate at temperatures as high as 400 ℃. To surpass the operation temperature limit of currently available commercial capacitors that operate in temperatures up to 125 ℃, Bi_1/2Na_1/2TiO₃ (BNT), which has a large temperature-insensitive dielectric response with a maximum dielectric permittivity temperature of 300 ℃, was selected. By introducing an intentional A-site cation deficiency and post-heat treatment, we successfully manage to control the dielectric properties of BNT to use it for high-temperature applications. The key feature of this new BNT is remarkable reduction in dielectric loss (0.36 to 0.018) at high temperature (300 ℃). Structural, dielectric, and electrical properties of this newly developed BNT were systematically investigated to understand the underlying mechanism.

• KIEE International Transactions on Electrophysics and Applications
• /
• 제11C권3호
• /
• pp.70-74
• /
• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• KIEE International Transactions on Electrophysics and Applications
• /
• 제3C권2호
• /
• pp.48-54
• /
• 2003

To evaluate the radiation degradation of ethylene propylene rubber (EPR), radiation effects on EPR were investigated by using dielectric analysis and thermal-gravimetric analysis. Permittivity, loss factor, tan$\delta$, and thermal decomposition temperature were observed for ${\gamma}$-ray irradiated EPR. As the radiation dose was increased, the peak temperature of the loss factor and tans of EPR were increased and loss factor and tan$\delta$ at peak temperature were decreased. Activation energies were calculated using loss factor and thermal decomposition for ${\gamma}$-ray irradiated EPR as well. The trends of both calculated activation energies showed the same tendencies as radiation dose was increased.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.309-310
• /
• 2005

Generally, the dielectric constant and loss tangent are gotten by resonators. This paper presents analysis of the comparing the dielectric constant and loss tangent from the Ring, T and series gap structures. The T structure can be analyzed easily at wideband characteristic with simple design. the Ring can ignore the radiation loss from the open-ended effect. the Series gap can get more accurate permittivity than a Ring structure. The Used materials were dupont9599 LTCC ceramic and daeju0086 Ag.

• E2M - 전기 전자와 첨단 소재
• /
• 제7권6호
• /
• pp.534-542
• /
• 1994

Microstructures and dielectric properties of (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.006Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramic were investigated. The specimens fired in a reducing atmosphere(N$_{2}$) were painted on the surface with CuO paste, and then annealed at 1100.deg. C for 2 hr. SEM and EDAX revealed that CuO penetrated rapidly into the bulk along the grain boundaries during the annealing. Grain size increased with increasing Ca content up to 15[mol%], but decreased with further addition. In the specimens with 10-15[mol%l of Ca, excellent dielectric properties were obtained as follows; dielectric constant <25000, dielectric loss(tan .delta[%]) <0.3[%] and capacitance change rate with temperature <.+-.[%], respectively. All the specimens in this study exhibited dielectric relaxation with frequency as a function of the temperature. The dispersive frequency was over 10$^{6}$ [Hz].z].

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.794-797
• /
• 2004

The object of investigation is represented by PbxSrl-xTiO3(PST) thin films, which were fabricated by the alkoxide-based sol-gel method on Pt/Ti/SiO2/Si substrate. We have investigated both structural and dielectric properties of PST thin films aimed to tunable microwave device applications as a function of Pb/Sr ratio. PST thin films showedtypical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films were found as strongly dependent on Pb/Sr composition ratio. Increasing of Pb content leads to simultaneous increasing of both dielectric constant and dielectric loss characteristics of PST films. The figure of merit (FOM) Parameter (FOM : (%) tunability / tan (%)) reached a maximal value of 27.5 corresponding to Pb/Sr ratio of 40/60. The tunability increased with increasing Pb content. The dielectric constants, dielectric loss and tunability of the PST thin films at Pb/sr ratio of 40/60 measured at 100 kHz were 335, 0.0174 and 47.89 %, respectively.