• Journal of the Korean Ceramic Society
• /
• v.43 no.11 s.294
• /
• pp.688-692
• /
• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

• Journal of the Korean Ceramic Society
• /
• v.43 no.11 s.294
• /
• pp.715-723
• /
• 2006

Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.21-25
• /
• 2001

In this study, recovery of plasma etching damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of Cl$_2$/CF$_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450$\AA$/min at 30% additive Ar into (Cl$_2$(80%)+CF$_4$ (20%)) and 1100$\AA$/min at 10% additive $O_2$ into C(Cl$_2$(80%)+CF$_4$ (20%)). In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of Ti$_{x}$O$_{y}$ is recovered by $O_2$ recombination during rapid thermal annealing process.s.s.

• Journal of Sensor Science and Technology
• /
• v.8 no.3
• /
• pp.232-238
• /
• 1999

Single mode fiber optic interferometers using the Fabry-Perot configuration were embedded in a reinforced concrete structure. These interferometers investigated the character of phase shift and strain for internal loads. The 10 mm length of FFPI in the continuous length of single mode fiber (SMF) were produced with two pieces of SMF coated were $TiO_2$ dielectric film utilizing the fusion splicing technique. The fabricated fiber optic Fabry-Perot interferometer(FFPI) and the 6 mm length of steel bar were buried with specimen ($100{\times}100{\times}50\;mm^3$) which was made of concrete structure. The resin protects FFPI and fiber leads from squeezed concrete. Sensors at different point in the structure were multiplexed by TDM (Time Division Multiplexing) method and the deformation to the external loads at each point could be monitored simultaneously. The output signals were proportional to the external loads applied to the structure and the sensitivity of the sensors were $1.03^{\circ}/kg$ and $0.76^{\circ}/kg$ respectively.

• Journal of Sensor Science and Technology
• /
• v.5 no.3
• /
• pp.87-92
• /
• 1996

The PLT thin films on (100) cleaved MgO single crystal substrate have been fabricated by rf magnetron sputtering using a PbO-rich target. The dependence of physical and electrical properties on the degree of c-axis orientation has been studied. The degree of c-axis orientation of PLT thin films depends on fabrication conditions. Fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, gas ratio of $Ar/O_{2}$, and rf power density were $640^{\circ}C$, 10 mTorr, 10 seem, and $1.7\;W/cm^{2}$, respectively. In these conditions, the PLT thin film showed the Pb/Ti ratio of 1/2 at the surface, the resistivity of $8{\times}10^{11}{\Omega}{\cdot}cm$, and dielectric constant of 110. The pyroelectric infrared sensors with these PLT thin films showed the peak to peak voltage of 450 m V and signal to noise ratio of 7.2.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.12
• /
• pp.852-856
• /
• 2014

$BaTiO_3$ nano powder can be synthesized by hydrate salt method at $120^{\circ}C$ in air. Decreasing the thickness of thick film, the nano dielectric particle is needed in electronic ceramics. However, the synthesis of $BaTiO_3$ nano particle at low temperature in air and their mechanism were not reported enough. And ultrasonic treatment can be tried because of low temperature process in air. Therefore, in this study, the $BaTiO_3$ nano powder was synthesised with the synthesis time and ultrasonic treatment at $120^{\circ}C$ in air. In the synthesis process, the effects of process were evaluated. From the experimental observation, the synthesis mechanism was proposed. The homogeneous $BaTiO_3$ particle was synthesised by KOH salt solution at $120^{\circ}C$ for 1hour. It was conformed that the ultrasonic treatment effected on the increase of synthesis rate. After cutting the salt powder using FIB, $BaTiO_3$ nano particles observed homogeneously in the cross-section of the salt particle.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.30 no.1
• /
• pp.8-11
• /
• 2019

In this paper, a Ku-band 50-W internally-matched power amplifier is designed and fabricated using a CGHV1J070D GaN HEMT from Wolfspeed. To obtain the same magnitudes and phases for the output signals of the unit transistor cells, which constitute a power transistor, a slit pattern and an asymmetric T-junction are used in the input and output matching circuits. The internally-matched power amplifier is fabricated on two different thin-film substrates with relative dielectric constants of 40 and 9.8, respectively, and is measured under pulsed conditions with a pulse period of $330{\mu}s$ and a duty cycle of 6%. The measured results show a maximum output power of 50~73 W, a drain efficiency of 35.4~46.4%, and a power gain of 4.5~6.5 dB from 16.2 to 16.8 GHz.

• The Journal of the Convergence on Culture Technology
• /
• v.7 no.3
• /
• pp.463-468
• /
• 2021

In this paper, when a refractive index grating and a gain grating were simultaneously present in a DFB laser having a wavelength of 1.55 ㎛, a dielectric film coating was applied so that reflection did not occur on the right mirror surface, so that 𝜌_r=0. In case of 𝛿L>0, the characteristics of the oscillation frequency and oscillation gain were analyzed. When the grating phase of the left mirror surface continues to decrease from 𝜋, the graph lines of each mode gradually shift to the left. In case of 𝜅L=10, the threshold gain of the oscillation mode is the lowest. In this case, the mode selectivity is relatively low. From 𝜅L=0.5 to 𝜅L=6, the mode selectivity and the frequency stability are excellent. In the case of DFB lasers with an anti-reflection coated mirror, the threshold gain of the oscillation mode increases but the mode selectivity is about twice as excellent, compared with DFB lasers of having two cleaved facets.

• Journal of the Microelectronics and Packaging Society
• /
• v.31 no.3
• /
• pp.87-90
• /
• 2024

Currently, when oxides are used as insulators in hybrid bonding for 3D integration, they are prone to delamination due to their surface characteristics, and the RC delay value due to the resistance of the metal and the capacitance of the insulator increases as the wiring of the semiconductor chip becomes longer. To solve these problems, we studied the optimization of the conditions of the polymer insulator bonding method for hybrid bonding. To check the possibility of the de-wetting method, we coated a polymer film on the existing micro pillar and conducted hot-press bonding to remove the polymer between the metals. Through this study, it is expected that the introduction of polymers as insulators in hybrid bonding and fine-pitch metal bonding will improve signal transmission speed by reducing RC delay. It is also expected to be commercialized in the future to increase the number of I/O terminals by applying it to hybrid bonding.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1996.06a
• /
• pp.258-292
• /
• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.