• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.261-265
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• 2010

In this paper, we attempt to improve the electrical characteristics of epoxy resin at high temperature (above $80^{\circ}C$) by adding magnesium oxide (MgO), which has high thermal conductivity. Scanning electron microscopy (SEM) of the dispersion of specimens with added MgO reveals that they are evenly dispersed without concentration. The dielectric breakdown characteristics of $SiO_2$ and MgO nanocomposites are tested by measurements at different temperatures to investigate the filler's effect on the dielectric breakdown characteristics. The dielectric breakdown strength of specimens with added $SiO_2$ decreases slowly below $80^{\circ}C$ (low temperature) but decreases rapidly above $80^{\circ}C$ (high temperature). However, the gradient of the dielectric breakdown strength of specimens with added MgO is slow at both low and high temperatures. The dielectric breakdown strength of specimens with 0.4 wt% $SiO_2$ is the best among the specimens with added $SiO_2$, and that of specimens with 3.0 wt% and 5.0 wt% MgO is the best among those with added MgO. Moreover, the dielectric strength of specimens with 3.0 wt% MgO at high temperatures is approximately 53.3% higher than that of specimens with added $SiO_2$ at $100^{\circ}C$, and that of specimens with 5.0 wt% of MgO is approximately 59.34% higher under the same conditions. The dielectric strength of MgO is believed to be superior to that of $SiO_2$ owing to enhanced thermal radiation because the thermal conductivity rate of MgO (approximately 42 $W/m{\cdot}K$) is approximately 32 times higher than that of $SiO_2$ (approximately 1.3 $W/m{\cdot}K$). We also confirmed that the allowable breakdown strength of specimens with added MgO at $100^{\circ}C$ is within the error range when the breakdown probability of all specimens is 40%. A breakdown probability of up to 40% represents a stable dielectric strength in machinery and apparatus design.

• Carbon letters
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• v.26
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• pp.25-30
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• 2018

The dielectric medium used in electrophoretic displays (EPDs) is required to be an environmentally friendly solvent with high density, low viscosity, and a large electric constant. Hydrofluoroether, a highly fluorinated solvent with eco-friendly characteristics, is regarded as a viable alternative medium for EPDs, owing to the similarity of its physical properties to those of the conventional EPD medium. Surface modification of particles is required, however, in order for it to disperse in the charged solvent. Also, positive/negative charges should be present on the particle surface to enable electrophoretic behavior. In this study, carbon black particles wrapped with positively charged nitrogen (N-CBs) were fabricated by a simple hydrothermal process using a poly(diallyldimethylammonium chloride) solution as a black coloring agent for the EPD. The dispersion behavior of N-CBs was investigated in various solvents.

• Elastomers and Composites
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• v.18 no.2
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• pp.51-59
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• 1983

The dielectric properties of polymers are very important when investigating the molecular structure of polymers. The characteristics of the dielectric absorption in vulcanized natural rubber were studied in frequency ranging from 10[KHz] to 32[MHz] at the temperature of 25[$^{\circ}C$]. As a result of the study, it has been confirmed that natural rubber vulcanized below 4phr leads to two kinds of dielectric losses due to the interfacial polarization and the dipole polarization by sulfur, and of above 7[%] was only a loss due to the dipole polarization by sulfur. Futhermore, the dielectric loss maximum $tan{\delta}$ spectrum, removed to the low frequency in accordance with increasing sulfur, depends greatly on sulfur. The volume resistivity of $10^{7}{\sim}10^{11}[{\Omega}{\cdot}cm}]$, regardless of whether the crosslinking of rubber is weakened by sulfur, was observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.225-225
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• 2009

In this study, Nano and micro-filler mixture composites were fabricated by fixed value of $SiO_2$ nano-filler 0.4 [wt%] according to increase of $SiO_2$ micro-filler [wt%] from 1 to 10. Composites with a good dispersion of mixed $SiO_2$ Nano and micro-particles in the epoxy resins were prepared and experiments were performed to measure the dielectric breakdown strength properties with various temperature and thickness. The dielectric strength properties are compared and analyzed with respect to nano/micro-composites filled with $SiO_2$ fillers less than properties obtained for nanocomposites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.467-469
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• 2001

KAM200 which can be used electroluminescence binder is cyano material. In this study, we have fabricated KAM200 thin film by Spin-Coating method. And we have studied the electical properties of KAM200 thin films. In the I-V characteristics, the current decreases as the voltage overflow definite voltage immediately. And that definite voltage depend on thickness of KAM200 material. In the case of thickness is 1.9[$\mu\textrm{m}$], definite voltage is 7[V]. And that's electrical field 3.86[MV/m]. The dielectric properties of KAM200 thin film is investigated by measuring dielectric dispersion and absorption. KAM200's Relative dielectric constant is 10.25, and it has high permittivity compared with different materials.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.2
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• pp.139-143
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• 1988

A new measurement method of coupled transmission line characteristics is described. This method presents precision values of even-and odd-mode impedances as well as effective dielectric constants of symmetric parallel coupled microstrip lines from the scalar quantities obtained by transmission coefficients at two different resonance frequencies. Especially these values include dispersion effects in the measured frequency band. The measured impedances and effective dielectric constants of actually fabricated coupled lines on the Teflon substrates with low dielectric constants are good agreement with predicted values. And the experimental pass band characteristics of single section resonator by using previously designed coupled lines agree well with theoretical values.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.13-22
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• 1999

Both the resonance and ultrasonic techniques are standard methods far characterizing the physical properties of piezoelectric materials. However, we found that each technique can only offer a few reliable measurements while the rest often have errors or impossible to implement because of the sample requirements. This paper show that one can use the combination of both techniques to achieve much better accuracy and be able to get the complete set of elastic, dielectric and piezoelectric coefficients using fewer samples. Using an ultrasonic spectroscopy we have also measure the dispersion of the ultrasonic velocity and the attenuation up to 65 MHz. Pb(Zr,Ti)O$_3$[PZT] ceramics were used as examples fur both studies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.125-129
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• 1992

When relaxation time will be distributed, TSC observed in the experimental procedure was analysed by using a potential model having two equilibrium positions and equations of dielectric properties was derived. Calculation of distribution was made by matrix method and compared/confirmed values obtained by TSC and alternating current which have a correspondence with each other. In this measurement, distribution of activation energy and relaxation time was determined by TSC peak at around 147k/364 of which center is 10$\^$-4/ sec/10$\^$5/ sec respectively at room temperature and also obtained dielctric loss factor at the range of 10$\^$-7/-10$\^$5/Hz. It seems that low temperature peak is local dispersion and high temperature peak have a relation to dielectric transition of the material.

• Journal of the Korean Ceramic Society
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• v.44 no.5 s.300
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• pp.179-183
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• 2007

BCB $Resin-BaNd_2Ti_4O_{12}$(BNT) composites with BNT contents were prepared by tape casting method and epoxy resin-BNT composites were prepared by using heating press. Their dielectric properties and microstructures were investigated. The dielectric properties such as dielectric constant and dielectric loss at 1 MHz for epoxy resin-BNT composites and BCB resin-BNT composites are improved with an increase of BNT volume fraction. The dielectric constant of the Epoxy-BNT composite increased from 5.9 to 7.8 as the volume fraction of BNT increased from 15 to 25. The dielectric constant of the BCB-BNT composite increased from 9.1 to 15.5 as the volume fraction of BNT increased from 30 to 50. The dielectric behavior of BCB-BNT system can be explained by Lichtenecker's equation. The dielectric constant of epoxy resin-BNT composite is smaller than that of BCB resin-BNT composite. These results are considered to be related with the dispersion of BNT filler in polymer matrix from the result of SEM photograph.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.66-69
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• 2009

The compositional dependence of bismuth iron oxides and effect of La-substitutions in the structure of $BiFeO_3$ compounds were investigated, which compounds were synthesized by conventional ceramic processing. It is shown that some of bismuth iron oxides including $BiFeO_3$ show the narrow single phase region. The effect of La-doping in $BiFeO_3$ was presented as disappearance of many impurity phases of Bi-Fe-O compounds. The lower electrical resistivity was obtained as those compositions of Fe deficient region and La-doped $BiFeO_3$. The saturation magnetization of La-doped $BiFeO_3$ was increased with La content. The dielectric dispersion was also observed for those Bi-Fe-O compounds with Fe deficient and La-doped $BiFeO_3$ at low frequencies under 1 kHz.