• Title/Summary/Keyword: die series

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The Effect of Deformation Heat to the High Strain rate Plastic Flow (고변형율 속도 유동곡선에 미치는 가공열의 영향)

  • 정재영
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2000.04a
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    • pp.119-122
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    • 2000
  • Dynamic deformation of metallic materials mostly accompanies substantial amounts of deformation heat. Since the flow stress of deformation is sensitive to temperature implication of heat due to plastic work is essential to the evaluation of constitutive relations. In this study a series of compression tests were conducted for SAF 2507 super duplex stainless steel and the accumulation of deformation heat was calculated through numerical integration method. Isothermal flow surfaces were deduced from subsequent logarithmic interpolation. Simple closed die forging process was analyzed and optimized with commercial FEM code applying both raw and calibrated material database.

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An Investigation on the Mechanical Behaviors of Lubricant and Coating to Improve the Drawability of Non-heat Treated Steels (열처리 생략강의 인발특성 향상을 위한 윤활제와 피막제의 기계적 거동 고찰)

  • Lee, Sang-Jun;Yoo, Ui-Kyung;Lee, Young-Seog;Byon, Sang-Min
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.7 no.4
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    • pp.62-67
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    • 2008
  • In this research, we developed a pilot wire-drawing machine as well as wire end-pointing roller. Using these machines, we performed a pilot wire-drawing test at different coating material and lubricant when the reduction ratio is 10 %. To inversely compute the friction coefficient between the coating layer of wire and the surface of die for a specific lubricant, we carried out a series of three dimensional finite element analysis. Results show that the drawing force is varied with the coating material of wire at the same reduction ratio and lubricant. It is noted that the frictional coefficient in drawing is dependent on the coupled property of coating material and lubricant, indicating the best coating material for a given lubricant.

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Influence affected on the curvature radius of jar by circuit of cooling temperature and temperature control (냉온회로 및 제어가 JAR곡율반경에 미치는 영향)

  • Shin, Nam-Ho;Choi, Seok-Jong
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.8 no.6
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    • pp.1313-1318
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    • 2007
  • When the mold is cooled suddenly to reduce the time for forming work and improve the quality of jar50ml which is different highly at rib thickness by a series of various curvature radii, the poor quality of void, flow and deformation happens. The structure of spiral cooling circuit at cavity and core can control the temperature of inner and outer side sufficiently. And the system can control cooling and heating automatically. These things are applied to Jar mold. and so, the best quality and the effect of productivity improvement can be obtained.

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A study on the fabrication and processing of ultra-precision diamond tools using FIB milling (FIB milling을 이용한 고정밀 다이아몬드공구 제작과 공정에 관한 연구)

  • Wi, Eun-Chan;Jung, Sung-Taek;Kim, Hyun-Jeong;Song, Ki-Hyeong;Choi, Young-Jae;Lee, Joo-Hyung;Baek, Seung-Yup
    • Design & Manufacturing
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    • v.14 no.2
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    • pp.56-61
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    • 2020
  • Recently, research for machining next-generation micro semiconductor processes and micro patterns has been actively conducted. In particular, it is applied to various industrial fields depending on the machining method in the case of FIB (Focused ion beam) milling. In this study, intends to deal with FIB milling machining technology for ultra-precision diamond tool fabrication technology. Ultra-precision diamond tools require nano-scale precision, and FIB milling is a useful method for nano-scale precision machining. However, FIB milling has a problem of Gaussian characteristics that are differently formed according to the beam current due to the input of an ion beam source, and there are process conditions to be considered, such as a side clearance angle problem of a diamond tool that is differently formed according to the tilting angle. A series of process steps for fabrication a ultra-precision diamond tool were studied and analyzed for each process. It was confirmed that the effect on the fabrication process was large depending on the spot size of the beam and the current of the beam as a result of the experimental analysis.

Experimental evaluation of machining limit in machining V-shaped microgrooves on electroless nickel plated die materials (무전해 니켈도금 소재의 초정밀 가공에서 V-형상 미세 패턴 가공한계에 대한 실험적 평가)

  • Kim, Hyun Chul
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.22 no.2
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    • pp.263-267
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    • 2013
  • The continuing demand for increasingly slimmer and brighter liquid crystal display (LCD) panels has led to an increased focus on the role of light guide panels (LGPs) or optical films that are used to obtain diffuse, uniform light from the backlight unit (BLU). The most basic process in the production of such BLU components is the micromachining of V-shaped grooves. Thus, given the current trend, micromachining of V-shaped grooves is expected to play increasingly important roles in today's manufacturing technology. LCD BLUs comprise various optical elements such as a LGP, diffuser sheet, prism sheet, and protector sheet with V-shaped grooves. High-aspect-ratio patterns are required to reduce the number of sheets and enhance light efficiency, but there is a limit to the aspect ratio achievable for a given material and cutting tool. Therefore, this study comprised a series of experimental evaluations conducted to determine the machining limit in microcutting V-shaped grooves on electroless nickel plated die materials when using single-crystal diamond tools with point angles of $20^{\circ}-80^{\circ}$. Cutting performance was evaluated at various cutting speeds and depths of cut using different machining methods and machine tools. The experimental results are that V-shaped patterns with angles of $80^{\circ}$ or up can be realized regardless of the machining conditions and equipment. Moreover, the feed rate has little effect on machinability, and it is thought that the fly-cut method is more efficient for shallow patterns.

Dependence of Hot Electron Effects on Temperature in The Deep Submicron SOI n-Channel MOSFETs (Deep Submicron SOI n-채널 MOSFET에서 열전자 효과들의 온도 의존성)

  • Park, Keun-Hyung;Cha, Ho-Il
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.11 no.2
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    • pp.189-194
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    • 2018
  • Nowadays most integrated circuits are built using the bulk CMOS technology, but it has much difficulty in further reduction of the power consumption and die size. As a super low-power technology to solve such problems, the SOI technology attracts great attention recently. In this paper, the study results of the temperature dependency of the hot carrier effects in the n-channel MOSFETs fabricated on the thin SOI substrate were discussed. In spite that the devices employed the LDD structure, the hot carrier effects were more serious than expected due to the high series resistance between the channel region and the substrate contact to the ground, and were found to be less serious for the higher temperature with the more phonon scattering in the channel region, which resulted in reducing the hot electron generation.

An L-band Stacked SOI CMOS Amplifier

  • Kim, Young-Gi;Hwang, Jae-Yeon
    • Journal of IKEEE
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    • v.20 no.3
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    • pp.279-284
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    • 2016
  • This paper presents a two stage L-band power amplifier realized with a $0.32{\mu}m$ Silicon-On-Insulator (SOI) CMOS technology. To overcome a low breakdown voltage limit of MOSFET, stacked-FET structures are employed, where three transistors in the first stage amplifier and four transistors in the second stage amplifier are connected in series so that their output voltage swings are added in phase. The stacked-FET structures enable the proposed amplifier to achieve a 21.5 dB small-signal gain and 15.7 dBm output 1-dB compression power at 1.9 GHz with a 122 mA DC current from a 4 V supply. The amplifier delivers a 19.7 dBm. This paper presents a two stage L-band power amplifier realized with a $0.32{\mu}m$ Silicon-On-Insulator (SOI) CMOS technology. To overcome a low breakdown voltage limit of MOSFET, stacked-FET structures are employed, where three transistors in the first stage amplifier and four transistors in the second stage amplifier are connected in series so that their output voltage swings are added in phase. The stacked-FET structures enable the proposed amplifier to achieve a 21.5 dB small-signal gain and 15.7 dBm output 1-dB compression power at 1.9 GHz with a 122 mA DC current from a 4 V supply. The amplifier delivers a 19.7 dBm saturated output power with a 16 % maximum Power Added Efficiency (PAE). A bond wire fine tuning technology enables the amplifier a 23.67 dBm saturated output power with a 20.4 % maximum PAE. The die area is $1.9mm{\times}0.6mm$.

Effect of Shape Design Variables on Flexibly-Reconfigurable Roll Forming of Multi-curved Sheet Metal (다중곡률 판재성형을 위한 비정형롤판재성형 공정의 형상설계변수에 대한 연구)

  • Son, S.E.;Yoon, J.S.;Kim, J.;Kang, B.S.
    • Transactions of Materials Processing
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    • v.23 no.2
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    • pp.103-109
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    • 2014
  • Flexibly-reconfigurable roll forming (FRRF), which is a sheet forming process for multi-curved sheet metal, may solve both the economic and technical problems incurred in using a conventional die forming process. In the FRRF process, the multi-curved sheet metal is formed by different strain distributions on the sheet metal, and the reconfigurable rollers are used as tools during the forming. Therefore, a thorough investigation focused on the reconfigurable rollers is required for the realization of the FRRF process prior to the fabrication of FRRF machine. In the current study, a series of finite element simulations were conducted to study the load distributions experienced by the reconfigurable roller. In order to verify the shape design variables, the effect of the metal thickness on the curvatures of sheet is also presented.

A 6 Gb/s Low Power Transimpedance Amplifier with Inductor Peaking and Gain Control for 4-channel Passive Optical Network in 0.13 μm CMOS

  • Lee, Juri;Park, Hyung Gu;Kim, In Seong;Pu, YoungGun;Hwang, Keum Cheol;Yang, Youngoo;Lee, Kang-Yoon;Seo, Munkyo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.1
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    • pp.122-130
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    • 2015
  • This paper presents a 6 Gb/s 4-channel arrayed transimpedance amplifiers (TIA) with the gain control for 4-channel passive optical network in $0.13{\mu}m$ complementary metal oxide semiconductor (CMOS) technology. A regulated cascode input stage and inductive-series peaking are proposed in order to increase the bandwidth. Also, a variable gain control is implemented to provide flexibility to the overall system. The TIA has a maximum $98.1dB{\Omega}$ gain and an input current noise level of about 37.8 pA/Hz. The die area of the fabricated TIA is $1.9mm{\times}2.2mm$ for 4-channel. The power dissipation is 47.64 mW/1ch.

The Study of Manufacturing Technology for a Sill Side by Roll Forming (다단 성형 기술을 이용한 차체 부품 개발)

  • Kim, D.K.;Han, S.W.;Jeon, H.J.;Cheon, S.H.;Moon, Y.H.
    • Transactions of Materials Processing
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    • v.23 no.6
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    • pp.376-379
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    • 2014
  • During roll forming a sheet metal is continuously and progressively formed into a product of the required cross-section and longitudinal shape. An example product is a circular tube with a required diameter, wall-thickness and straightness. Roll forming occurs by passing the sheet through a series of forming rolls that are arranged in tandem. Each pair of forming rolls in the roll forming line plays a particular role in obtaining the required cross-section and longitudinal shape in the product. In recent years, that process is often applied to car body parts by automotive industries. In the current study, an optimal model design and proper roll-pass sequences as well as the number of forming rolls and bending angles were used to produce a sill side. The effects of the process parameters on the final shape formed by roll forming defects were evaluated.