• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.356-357
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• 2006

Tin oxide thin films have been prepared on display glass from mixtures of dibutyl tin diacetate as a tin source, oxygen as an oxidant by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The relationships between the properties of tin oxide thin films and various reaction parameters such as the deposition temperature, deposition time and the oxygen gas flow rate were studied. As the deposition temperature increased, the texture plane of $SnO_2$ changed from (200) plane to denser (211) and (110) planes. Lower deposition temperature and thinner thickness of deposited film led to decreasing grain size, surface roughness and electrical resistivity of the formed thin films at $325{\sim}425^{\circ}C$. The properties of fabricated $SnO_2$ films are highly changed with variations of substrate temperature and deposition time.

• Journal of the Korean Chemical Society
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• v.31 no.1
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• pp.102-109
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• 1987

Some characteristics of $SnO_2$ film which was deposited on a slide glass substrate, using dibutyl tin diacetate and oxygen, by the chemical vapor deposition were observed. The optimum condition for the preparation of the film was found to be at 420$^{\circ}C$ of substrate temperature for 20 min of deposition. Important optical, electrical, and structural features of the film were examined. It was found that the typical $SnO_2$ film on the untreated substrate was 4000${\AA}$ in thickness, transmitted 90% of the visible liglit, and provided 5800 ohms/${\square}$ of the sheet resistance. It was also found that the surface treatments of the slide glass by acid leaching were beneficial. The film structure was found to be a mixture of polycrystalline tetragonal stannic oxide confirmed by the X-ray diffraction and to be spherical fine grains concluded by the scanning electron microscopy.