• Title/Summary/Keyword: device physics

Search Result 719, Processing Time 0.033 seconds

Resistance Switching Mechanism of Metal-Oxide Nano-Particles Memory on Graphene Layer

  • Lee, Dong-Uk;Kim, Dong-Wook;Kim, Eun-Kyu
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.08a
    • /
    • pp.318-318
    • /
    • 2012
  • A graphene layer is most important materials in resent year to enhance the electrical properties of semiconductor device due to high mobility, flexibility, strong mechanical resistance and transparency[1,2]. The resistance switching memory with the graphene layer have been reported for next generation nonvolatile memory device[3,4]. Also, the graphene layer is able to improve the electrical properties of memory device because of the high mobility and current density. In this study, the resistance switching memory device with metal-oxide nano-particles embedded in polyimide layer on the graphene mono-layer were fabricated. At first, the graphene layer was deposited $SiO_2$/Si substrate by using chemical vapor deposition. Then, a biphenyl-tetracarboxylic dianhydride-phenylene diamine poly-amic-acid was spin coated on the deposited metal layer on the graphene mono-layer. Then the samples were cured at $400^{\circ}C$ for 1 hour in $N_2$ atmosphere after drying at $135^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was done by a thermal evaporator. The electrical properties of device were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. We will discuss the switching mechanism of memory device with metal-oxide nano-particles on the graphene mono-layer.

  • PDF

Enhancement of the Magnetic Flux in Metglas/PZT-Magnetoelectric Integrated 2D Geomagnetic Device

  • Huong Giang, D.T.;Duc, P.A.;Ngoc, N.T.;Hien, N.T.;Duc, N.H.
    • Journal of Magnetics
    • /
    • v.17 no.4
    • /
    • pp.308-315
    • /
    • 2012
  • Experimental investigations of the magnetization, magnetostriction and magnetoelectric (ME) effects were performed on sandwich - type Metglas/PZT/Metglas laminate composites. The results have been analyzed by taking into account the demagnetization contribution. The study has pointed out that the magnetic flux concentration is strongly improved in piezomagnetic laminates with a narrower width leading to a significant enhancement of the ME effects. The piezomagnetic laminates with the optimal area dimension were integrated to form a 2-D geomagnetic device, which simultaneously can precisely detect the strength as well as inclination of the earth's magnetic field. In this case, a magnetic field resolution of better than $10^{-4}$ Oe and an angle precision of ${\pm}0.1^{\circ}$ were determined. This simple and low-cost geomagnetic-field device is promising for various applications.