• Title/Summary/Keyword: deposition pattern

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Pulsed Electrochemical Deposition for 3D Micro Structuring

  • Park, Jung-Woo;Ryu, Shi-Hyoung;Chu, Chong-Nam
    • International Journal of Precision Engineering and Manufacturing
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    • v.6 no.4
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    • pp.49-54
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    • 2005
  • In this paper, micro structuring technique using localized electrochemical deposition (LECD) with ultra short pulses was investigated. Electric field in electrochemical cell was localized near the tool tip end region by applying pulses of a few hundreds of nano second duration, Pt-Ir tip was used as a counter electrode and copper was deposited on the copper substrate in mixed electrolyte of 0.5 M $CuSO_4$ and 0.5 M $H_2SO_4$, The effectiveness of this technique was verified by comparison with ECD using DC voltage. The deposition characteristics such as size, shape, surface, and structural density according to applied voltage and pulse duration were investigated. The proper condition was selected based on the results of the various experiments. Micro columns less than $10{\mu}m$ in diameter were fabricated using this technique. The real 3D micro structures such as micro spring and micro pattern were made by the presented method.

The Low Resistivity Gate Metals Formation of Thin Film Transistors by Selective CVD

  • Park, S.J.;Bae, N.J.;Kim, S.H.;Shin, H.K.;Choi, J.S.;Yee, J.G.;Choi, S.Y.
    • Journal of the Korean Vacuum Society
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    • v.4 no.S1
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    • pp.108-112
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    • 1995
  • Copper and aluminum selective deposition using (hfac)Cu(VTMS) and DMEAA precursors were performed in a warm-wall low pressure chemical vapour deposition reactor. The films of Cu and AI deposited on Corning 7059 glass and quartz with pattern of Cr seed metal. Selective deposition can be achieved at a pressure range of from 10-1 to 10 torr and substrate temperature range of 150-25$0^{\circ}C$. Selective deposition of Cu and AI by CVD is one of candidate for gate material formation fo larger area and high resolution plat panel displays.

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Modeling of Sediment Transport and Sand Bank Formation in a Macrotidal

  • Park, Moon-Jin
    • Journal of the korean society of oceanography
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    • v.35 no.1
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    • pp.1-10
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    • 2000
  • A two-dimensional numerical model was applied to investigate the sediment transport and sand bank formation in a macrotidal sea, the Kyunggi and Asan Bays. The tidal residual currents show quite complex pattern including counter-rotating eddies off the northwestern corner of the Dugjeok Island that reflect the promontory effect. Complex residual eddies are also present off the coast of the Taeanbando and in the Asan Bay. Net sediment transport pattern shows that sandy sediments in the Kyunggi and Asan Bays are generally transported landward from the outer sea suggesting sediment trapping inside the bays. This phenomenon may be related to the formation and maintenance of numerous sand banks in this macrotidal sea. Alternate occurrences of deposition and erosion predicted from the numerical model along the coast of the Taeanbando with strong deposition on the southwestern part of the 'Jangansatoe'(JSB), a large sand ridge off the coast of the Taeanbando appear to reflect the loose connection of JSB, The 'Joongangcheontoe', a central sand bank (CSB) with the main axis in the NW-SE direction in the Asan Bay may undergo a modification with strong deposition along the northeastern flank. These results indicate that the sand banks are actively modified and maintained by the strong tidal currents in this shallow macrotidal sea.

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A Study on Deep Etching technology for MEMS process (MEMS 가공을 위한 실리콘 Deep Etching 기술 연구)

  • 김진현;이종권;류근걸;이윤배;이미영;김우혁
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.5 no.2
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    • pp.128-131
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    • 2004
  • In this study Bosch etching process repeating etch and deposition by STS-ICP ASEHR was evaluated. Fundamentally etch depth changes were affected by thickness of deposited PR, $SiO_2$ and depth, and pattern size on the substrate. However etch rates were observed to be changed by variable parameters such as platen power, coil power, and process pressure. Etch rate showed $1.2\mu{m}/min$ and sidewall profile showed $90\pm0.2^\circ$ with platen power 12W, coil power 500W, and etch/passivation cycle 6/7sec. It was confirmed that this result was very typical to Bosch process utilizing ICP.

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A study on the SiC selective deposition (SiC의 선택적 증착에 관한 연구)

  • 양원재;김성진;정용선;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.2
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    • pp.233-239
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    • 1998
  • SiC thin films were deposited by chemical vapor deposition method using tetramethylsilane (TMS) and hexamethyldisilane (HMDS). The chamber pressure during the deposition was kept at about 1 torr. Precursor was transported to the reaction chamber by $H_2$gas and SiC deposition was carried out at the reaction temperature of $1200^{\circ}C$. Si-wafer masked with tantalum and MgO single crystal covered with platinum and molybdenum were used as substrates. The selectivity of SiC deposition was observed by comparing the microstructure between metal (Ta, Pt, and Mo) surfaces and substrate surfaces (Si and MgO). The deposited films were identified as the $\beta-SiC$ phase by X-ray diffraction pattern. Also, the deposition -behavior of SiC on each surface was investigated by the scanning electron microscope analysis.

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Feature Scale Simulation of Selective Chemical Vapor Deposition Process

  • Yun, Jong-Ho
    • Journal of the Korean Vacuum Society
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    • v.4 no.S1
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    • pp.190-195
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    • 1995
  • The feature scale model for selective chemical vapor deopsition process was proposed and the simulation was performed to study the selectivity and uniformity of deposited thin film using Monte Carlo method and string algorithm. The effect of model parameters such as sticking coefficient, aspect ratio, and surface diffusion coefficient on the deposited thin film pattern was improved for lower sticking coefficient and higher aspect ratio. It was revealed that the selectivity loss ascrives to the surface diffusion. Different values of sticking coefficients on Si and on SiO2 surface greatly influenced the deopsited thin film profile. In addition, as the lateral wall angle decreased, the selectively deposited film had improved uniformity except the vicinity of trench wall. The optimum eondition for the most flat selective film deposition pattern is the case with low sticking coefficient and slightly increased surface diffusion coefficient.

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Cytogenic Effects of Transplacentally Administered 2-Bromopropane -Pattern of Replicative DNA Synthesis(RDS) by BrdU Labeling Method- (2-Bromopropane의 경태반 영향에 관한 연구 -마우스 태자로의 이행과 태자세포의 복제 DNA합성세포에 관하여-)

  • 김영환;배은상
    • Journal of environmental and Sanitary engineering
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    • v.13 no.3
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    • pp.37-42
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    • 1998
  • 2-Bromopropane has been implicated to be the reason for the mass intoxication of workers at an electronic company in Korea. 2-Bromopropane deposition and pattern of DNA replication in mouse fetuses were analyzed after intravenous injection of 2-bromopropane. Injections were administered to pregnant ICR mice in order to cytogenetically evaluate transplacental 2-bromopropane. The results are summarized as follows; 1. A dose-dependent effect on DNA replication was observed equally in the lung, liver and kideneys of fetuses has been exposed to 2-bromopropane transplacentally as reductions of the labeling index. 2. Deposition of transplacentally administred 2-bromopropane in the fetus was lower than placenta.

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Numerical Simulation of Particle Deposition Pattern on Cylindrical Fiber under External Electrical Field (외부 전기장내의 단일 섬유에 대한 먼지층 형사 수치 모사)

  • 박현설;정용원;박영옥;이규원
    • Journal of Korean Society for Atmospheric Environment
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    • v.15 no.1
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    • pp.41-51
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    • 1999
  • In this study, the two dimensional morphology of particle accumulates on a cylindrical fiber was numerically simulated when a uniform external electric field was present across a cylindrical fiber. In order to investigate the mechanism of linear dendrite formation which is observed under the above electrostatic condition, the electrostatic forces between a newly introduced particle and each deposited particle were calculated and compared with those between the particle and fiber As a result of this study it was found that dielectrophoretic forces between the oncoming particle and fiber play principal roles in linear dendrite formation.

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전해도금을 위한 ALD Cu seed와 PVD Cu seed의 특성 비교

  • Kim, Jae-Gyeong;Park, Gwang-Min;Han, Byeol;Lee, Won-Jun;Jo, Seong-Gi;Kim, Jae-Jeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.231-231
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    • 2010
  • 현재 Cu배선 제조공정에서 전해도금은 Damascene pattern의 Cu filling에 사용되고 있는데, 우수한 특성의 전해도금을 위해서는 step coverage가 우수한 Cu seed layer가 필수적이다. 현재까지 Cu seed layer를 형성하는 방법으로는 ionized physical vapor deposition(I-PVD)이 사용되고 있는데, 22 nm 이후의 소자에서는 step coverage의 한계로 인해 완벽한 Cu filling 어려울 것으로 예상된다. 본 연구에서는 step coverage가 매우 우수한 atomic layer deposition(ALD) 방법으로 Cu seed layer를 증착하고 그 특성을 기존의 PVD 박막과 비교하였다. Ketoiminate 계열의 +2가 Cu 전구체와 $H_2$를 이용하여 ALD Cu 박막을 증착하였는데 exposure, 기판의 온도를 변화시키면서 기판별로 ALD Cu의 최적공정조건을 도출하였다. ALD Cu seed와 PVD Cu seed 위에 약 $1{\mu}m$의 Cu 박막을 전해도금한 후 박막의 두께, 비저항, 미세구조와 함께 pattern filling 특성을 비교하였다.

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Theoretical Analyses of Particle Deposition in a Five-lobe Compartment Human Lung Model (5-엽(葉) 인체 폐 모델에서의 흡입입자 침전해석)

  • 구재학
    • Proceedings of the Korea Air Pollution Research Association Conference
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    • 2000.04a
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    • pp.245-246
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    • 2000
  • 공기중의 오염 입자가 인체에 얼마나 많은 영향을 미치는가는 흡입된 입자 (inhaled particles) 중에서 얼마나 많은 양이 폐 (lung)에 침전되는가와 밀접한 관계가 있다. 또한 정상 및 비정상 (diseased) 폐에서, 흡입된 입자의 침전 위치와 침전양 (deposition site and dose)은 입자의 크기와 호흡 양식(breathing pattern)에 따라 큰 차이를 보이며, 이런 차이는 흡입오염입자 (inhaled pollutant particles)에 의한 건강 위험도 평가 (health risk assessment) 및 흡입용 약물 (inhaled drug aerosols)의 치료효과(therapeutic effects) 평가 등에 큰 영향을 미친다. (중략)

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