• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1276-1279
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• 2005

The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent $SnO_2$ thin-film prepared by ion beam assisted deposition (IBAD) was investigated. With a buffer layer of thermally evaporated 100 nm $SnO_2$ film deposited prior to IBAD process, our encapsulated OTFTs sustained its initial field-effect mobility up to one month and then gradually degraded showing only 37% reduction compared to 90% reduction of non-encapsulated OTFTs after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over $10^5$ to that of the unprotected devices $({\sim}10^4)$ which was reduced from ${\sim}10^6$ before aging. Therefore, the enhanced long-term stability of our encapsulated OTFTs should be attributed to well protection of permeation of $H_2O$ and $O_2$ into the devices by the IBAD $SnO_2$ thin-film which could be used as an effective inorganic gas barrier for transparent organic electronic devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.920-923
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• 2003

We fabricated composite materials as a pellet structure with the various kinds of inorganic material powder. The composite materials were deposited onto the plastic film by the electron beam evaporation and water vapor transmission rates (WVTRs) were measured by the MOCON facility. As a result of WVTRs, the composite materials had lower WVTR value than any other inorganic materials. So, these films were proposed to protect the organic light emitting device (OLED) from moisture and oxygen. We can consider that the composite thin-film is one of the more suitable candidates for the thin-film passivation layer in the OLED. And, we are processing the XRD, XPS and EPMA to analyze the property of the composite material. We will also analyze properties of the current-voltage and luminescence for lifetime both the composite thin-film passivated OLED and non-passivated OLED.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.49 no.8
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• pp.418-423
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• 2000

In this paper, we reported the current limiting properties of superconducting fault current limiters (SFCL). Our SFCL was patterned in a coil-type on a YBCO film deposited using rf sputtering techniques and was coated with a gold shunt layer in order to disperse the heat generated at hot spots in the YBCO film. Current increased up to 13.5 Apeak at 60 Hz for the voltage of 11.5 Vpeak, which is the minimum quench point, and increased up to 17.6 Apeak at 60 Hz for the voltage of 80 Vpeak. The quench completion time was 5 msec at 11.5 Vpeak and 4 msec at 80 Vpeak respectively. We think that this architecture using coil-type SFCL can be useful for the protection of the power delivery systems from fault currents.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.662-666
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• 2005

Silicon nitride $(SiN_x)$ film is a promising material for anti-reflection coating and passivation of multicrystalline silicon (me-Si) solar cells. In this work, a plasma-enhanced chemical vapor deposition (PECVD) system with batch-type reactor tube was used to prepare highly robust $SiN_x$ films for screen-printed mc-Si solar cells. The Gas flow ratio, $R=[SiH_4]/[NH_3]$, in a mixture of silane and ammonia was varied in the range of 0.0910.235 while maintaining the total flow rate of the process gases to 4,200 sccm. The refractive index of the $SiN_x$ film deposited with a gas flow ratio of 0.091 was measured to be 2.03 and increased to 2.37 as the gas flow ratio increased to 0.235. The highest efficiency of the cell was $14.99\%$ when the flow rate of $SiH_4$ was 350 sccm (R=0.091). Generally, we observed that the efficiency of the mc-Si solar cell decreased with increasing R. From the analysis of the reflectance and the quantum efficiency of the cell, the decrease in the efficiency was shown to originate mainly from an increase in the surface reflectance for a high flow rate of $SiH_4$ during the deposition of $SiN_x$ films.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1518-1520
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• 2001

Bi-layer Mo films were deposited on sodalime glass substrates using DC magnetron sputtering. As the gas pressure and power density, the resistivity varied from $1.5{\times}10^{-5}$ to $4.97{\times}10^{-4}{\Omega}{\cdot}cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The microstructure of the compressive stress films which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. Also, The highest efficiency was 15.2% on 0.2 $cm^2$. The fill factor, open circuit voltage and short circuit current were 63 %, 570 mV and 42.6 mA/$cm^2$ respectively.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.40-44
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• 2000

Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.719-722
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• 2003

Ferroelectric $Pb(Zr_{1-x}Ti_x)O_3$ (PZT) films were deposited on (001) MgO single crystals using sol-gel method. Structural properties and surface morphologies of PZT films were investigated using an X-ray diffractometer and a scanning electron microscopy, respectively. The dielectric properties of PZT films were investigated with the dc bias field using interdigitated capacitors (IDC) which were fabricated on PZT films using a thick metal layer by photolithography and dry etching process. The small signal dielectric properties of PZT films were calculated by a modified conformal mapping method with low and high frequency data, such as capacitance measured by an impedance gain/phase analyzer at 100 kHz and reflection coefficient (S-parameter) measured by a HP 8510C vector network analyzer at 1 -20 GHz. The IDC on PZT films exhibited about 67% of capacitance change with an electric field of 135 kV/cm at 10 GHz. These PZT thin films can be applied to tunable microwave devices such as phase shifters, tunable resonators and tunable filters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.616-619
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• 2003

This work presents the design, fabrication and microwave performance of distributed analog phase shifter (DAPS) fabricated on $(Ba,\;Sr)TiO_3$ (BST) thin films for X-band applications. Ferroelectric BST thin films were deposited on MgO substrates by pulsed laser deposition. The DAPS consists of high impedance coplanar waveguide (CPW) and periodically loaded tunable BST interdigitated capacitors (IDC). In order to reduce the insertion loss of DAPS and to remove the alteration of unloaded CPW properties according to an applied dc bias voltage, BST layer under transmission lines were removed by photolithography and RF-ion milling. The measured results are in good agreement with the simulated results at the frequencies of interest. The measured differential phase shift based on BST thin films was $24^{\circ}$ and the insertion loss decreased from 1.1 dB to 0.7 dB with increasing the bias voltage from 0 to 40V at 10 GHz.

• Journal of the Korean Ceramic Society
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• v.48 no.1
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• pp.86-93
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• 2011

Transparent plasma display can be realized by developing the synthetic chemistry of appropriate nanophosphors and generating nanophosphor-based transparent luminescent layers. For this goal, red-emitting $Y(V_{0.5},\;P_{0.5})O_4$:Eu nanophosphors were synthesized by a facile hydrothermal route at $200^{\circ}C$ for 48 h and the resulting nanophosphors were subsequently annealed at $800^{\circ}C$ at an ambient atmosphere. The crystallographic structure, morphology, and emission property of the as-synthesized and annealed nanophosphors were compared. Choosing 2-methoxyethanol as a dispersion medium and applying a standard sonication, well-dispersed nanophosphor solutions could be prepared. Using these dispersions, visible transparent nanophosphor layers were spin-deposited on glass substrates. By combining $Y(V_{0.5},\;P_{0.5})O_4$:Eu nanophosphor layer/glass substrate as a rear plate with a front plate used in a conventional plasma display panels (PDPs), mini-sized transparent red-emitting PDPs were constructed. Transmittance and luminance properties of two transparent test panels using as-synthesized versus $800^{\circ}C$-annealed nanophosphors were characterized and compared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1015-1018
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• 2004

We investigate the influence of the New Electron Injection Layers (EIL) on the performance of the Alkali Metal Complex vapor-deposited Organic Light Emitting Diodes(OLED). Two different Alkali Metal Complex were used; Lithium Quinolate (Liq), and Sodium Quinolate (Naq). In all cases, $Alq_3$ was the Electron Transporting Layer (ETL). We measure and compare the current density-voltage (J-V) and luminance-voltage (L-V) characteristics. We concluded that the turn-on voltage, and luminance efficiency are controlled by the type of EIL material used. We show the longer life-time OLED with Alkali Metal Complex EIL than OLED with LiF EIL. And we show the Optimized Alkali Metal Complex thickness is 3nm. Existent LiF to because is inorganic material, there is trouble to do epitaxy into thin layers but regulates the thickness in case of Alkali Metal Complex matter characteristic that is easy be. Alkali Metal Complex also appeared by sensitive thing in thickness than LiF If utilize this material, It is thought much advantages may be at common use of OLED.