• Journal of the Korean Ceramic Society
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• v.56 no.3
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• pp.325-330
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• 2019

Band convergence is known to be effective in improving thermoelectric performance by increasing the Seebeck coefficient without significantly reducing electrical conductivity. Decoupling of the Seebeck coefficient and electrical conductivity in converged bands is the key requirement. Yet, the degree of decoupling depends on the band parameters of the converging bands. Herein, we report theoretical transport properties of two valence bands as their energy difference changes from 0.25 eV to 0 eV. In order to demonstrate the effect of band parameters in transport, we first conducted calculations for the case where the two bands have the same parameters. Then, we conducted the same calculation by doubling the density-of-states effective mass of one valence band. Given that there are two bands, each band's effective mass was doubled one at a time while the other band's effective mass remained constant. We found that the decoupling was strongest when the bands participating in convergence had the same band parameters.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.643-650
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• 2000

Density-of-states effective mass(m*$_{d}$) and conductivity mass(m*$_{c}$)for Ge and Ge$_{0.8}$/Sn$_{0.2}$ are obtained by using 8$\times$8 k.p and strain Hamiltonians. It is shown that m*$_{d}$ and m*$_{c}$ for electrons in Ge/Ge$_{0.8}$/Sn$_{0.2}$(001) and Ge$_{0.8}$/Sn$_{0.2}$/Ge(001) are much smaller than those for electrons in relaxed Ge mainly due to the increase of interaction caused by the strain between the conduction band and valence bands at the $\Gamma$ point. The lift of degeneracy in Ge/Ge$_{0.8}$/Sn$_{0.2}$(001) and Ge/Ge$_{0.8}$/Sn$_{0.2}$(001) makes m*$_{d}$ and m*$_{c}$ for holes smaller than those in relaxed Ge and results in the decrease of the interband scattering as well as interband scattering. The decrease of the interband scattering is more obvious in Ge/Ge$_{0.8}$/Sn$_{0.2}$(001) because of its large splitting energy between the heavy hole and light hole band. Therefore, Ge/Ge$_{0.8}$/Sn$_{0.2}$(001) is expected to be good candidate for the development of ultra high-speed CMOS device.CMOS device.eed CMOS device.CMOS device.